General purpose PNP transistor amsem MMBT5401 featuring SOT23 package and 300 milliwatt power rating
Key Attributes
Model Number:
MMBT5401
Product Custom Attributes
Current - Collector Cutoff:
100nA
Emitter-Base Voltage(Vebo):
5V
Pd - Power Dissipation:
300mW
Transition Frequency(fT):
100MHz
Type:
PNP
Current - Collector(Ic):
600mA
Collector - Emitter Voltage VCEO:
160V
Mfr. Part #:
MMBT5401
Package:
SOT-23
Product Description
Product Overview
The MMBT5401 is a PNP transistor in a SOT-23 plastic-encapsulated package. It is complementary to the MMBT5551, offering high stability and reliability with a maximum power dissipation of 300mW. This component is suitable for general-purpose applications requiring a robust and dependable transistor.
Product Attributes
- Brand: Anhui Anmei Semiconductor Co., Ltd.
- Origin: China
- Package: SOT-23
- Epoxy UL Flammability: 94V-0
- Mounting Position: Any
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Max | Unit |
| Maximum Ratings & Thermal Characteristics (TA = 25 unless otherwise specified) | |||||
| Collector-Base Voltage | VCBO | -160 | V | ||
| Collector-Emitter Voltage | VCEO | -150 | V | ||
| Emitter-Base Voltage | VEBO | -5 | V | ||
| Collector Current-Continuous | IC | -600 | mA | ||
| Collector Power Dissipation | PC | 300 | mW | ||
| Junction Temperature | Tj | 150 | |||
| Storage Temperature | Tstg | -55 | +150 | ||
| Thermal resistance Junction to Ambient | RJA | 416 | /W | ||
| Electrical Characteristics (TA = 25 unless otherwise specified) | |||||
| Collector-base breakdown voltage | V(BR)CBO | IC=-100uA, IE=0 | -160 | V | |
| Collector-emitter breakdown voltage | V(BR)CEO | IC=-1mA, IB=0 | -150 | V | |
| Emitter-base breakdown voltage | V(BR)EBO | IE=-10uA, IC=0 | -5 | V | |
| Collector cut-off current | ICBO | VCB=-120V, IE=0 | -100 | nA | |
| Emitter cut-off current | IEBO | VEB=-4V, IC=0 | -100 | nA | |
| DC current gain | hFE(1) | VCE=-5V, IC=-1mA | 80 | ||
| hFE(2) | VCE=-5V, IC=-10mA | 100 | 300 | ||
| hFE(3) | VCE=-5V, IC=-50mA | 30 | |||
| Collector-emitter saturation voltage | VCE(sat)1 | IC=-10mA, IB=-1mA | -0.2 | V | |
| VCE(sat)2 | IC=-50mA, IB=-5mA | -0.5 | V | ||
| Base-emitter saturation voltage | VBE(sat)1 | IC=-10mA, IB=-1mA | -1.00 | V | |
| VBE(sat)2 | IC=-50mA, IB=-5mA | -1.00 | V | ||
| Transition frequency | fT | VCE=-5V, IC=10mA,f=30MHz | 100 | MHz | |
| *Pulse test: pulse width300us, duty cycle2.0% | |||||
| CLASSIFICATION OF hFE(2) | |||||
| HFE RANK | L | H | |||
| RANGE | 100-200 | 200-300 | |||
2410121528_amsem-MMBT5401_C7529048.pdf
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