JFETs
TOSHIBA TK40S10K3Z T6L1 NQ MOSFET for in AC adapters switching power supplies and battery protection
Toshiba MOSFET Product Guide 2009Toshiba's MOSFET devices are designed to meet the demands of ultra-high-density applications, offering superior frequency and switching characteristics, ruggedness, and low drive power. They are suitable for a wide range of applications including switching power ...
TOSHIBA TPCA8051 H T2L1 VM MOSFET designed for power management in AC adapters and motor driver systems
Toshiba MOSFET Product GuideToshiba's MOSFET devices are designed to meet the demands of ultra-high-density applications. They offer superior frequency and switching characteristics, ruggedness, low drive power, and ease of parallel connection. Key features include guaranteed avalanche capability, ...
TOSHIBA TK18E10K3S1X S high ruggedness MOSFET designed for power management and reduced power consumption
Toshiba MOSFET Product Guide 2009-9 Toshiba MOSFETs are designed to meet the demands of a wide range of ultra-high-density applications. They offer superior frequency and switching characteristics due to their trench structure, double-diffusion structure, and super-junction structure, leading to ...
switching power supply component TOSHIBA TK13A60DST A4Q M MOSFET with low RDS ON and high ruggedness
Toshiba MOSFET Product Guide 2009-9 Toshiba MOSFETs are designed to meet the demands of ultra-high-density applications, offering superior frequency and switching characteristics, ruggedness, low drive power, and ease of parallel connection. They feature a voltage-controlled device, minimizing drive ...
MOSFET TOSHIBA TK40P04M1 T6RSSQ for AC adapters and lithium ion secondary battery protection circuits
Toshiba MOSFET Product Guide 2009-9 Toshiba MOSFETs are designed to meet the demands of ultra-high-density applications, offering superior frequency and switching characteristics due to their trench structure and double-diffusion MOS (D-MOS) structure. Key advantages include no carrier storage ...
solenoid and lamp driver TOSHIBA TPC6111 TE85L F M MOSFET device for ultra high density applications
Toshiba MOSFET Product Guide 2009-9Toshiba's MOSFET devices meet the needs of a wide range of ultra-high-density applications. They offer superior frequency and switching characteristics, ruggedness, low drive power, and easy parallel connection. Key features include guaranteed avalanche capability, ...
voltage controlled MOSFET TOSHIBA TK20S06K3L T6L1 NQ featuring trench and double diffusion structure
Toshiba MOSFET Product Guide 2009-9Toshiba MOSFETs are designed to meet the demands of ultra-high-density applications, offering superior frequency and switching characteristics due to their trench structure and double-diffusion MOS (D-MOS) structure. These devices are voltage-controlled, requiring ...
Toshiba TK30S06K3L T6L1 NQ MOSFET offering small package size and excellent switching characteristics
Toshiba MOSFET Product Guide 2009-9Toshiba's MOSFET devices meet the needs of a wide range of ultra-high-density applications. They offer superior frequency and switching characteristics due to the absence of carrier storage effect, ruggedness without current concentration, low drive power as a ...
power MOSFETs including TOSHIBA TPC6110 TE85L F M engineered for frequency switching and low RDS
Toshiba MOSFET Product Guide 2009Toshiba's MOSFET devices are designed to meet the demands of a wide range of ultra-high-density applications. They offer superior frequency and switching characteristics, ruggedness, low drive power, and easy parallel connection. Key features include guaranteed ...
High current capacity N channel MOSFET SANKEN 2SK3710 for power management and motor drive circuits
Product Overview The SANKEN ELECTRIC 2SK3710 is a high-performance N-channel MOSFET designed for demanding applications. It features exceptionally low on-state resistance (5.0m at VGS=10V) and a built-in gate protection diode for enhanced reliability. This device is suitable for DC-DC converters and ...
Compact N Channel JFET onsemi 2SK3557 7 TB E for AM tuner RF amplification and low noise applications
Product OverviewThe 2SK3557 is an N-Channel JFET designed for AM tuner RF amplification and low-noise amplifier applications. It features a large |yfs|, small Ciss, ultrasmall-sized package for compact designs, and an ultralow noise figure.Product AttributesBrand: onsemiOrigin: Semiconductor ...
N Channel JFET Switching Transistor onsemi MMBF4393LT1G AECQ101 Qualified PPAP Capable SOT23 Package
Product OverviewThe MMBF4391L, MMBF4392L, and MMBF4393L are N-Channel JFET Switching Transistors designed for automotive and other applications requiring unique site and control change requirements. These devices are AECQ101 Qualified and PPAP Capable, and are PbFree, Halogen Free/BFR Free, and RoHS ...
Silicon Carbide Cascode JFET onsemi UF3C120080K3S designed for switching in motor drives and power supplies
UF3C120080K3S Silicon Carbide (SiC) Cascode JFETThe UF3C120080K3S is a Silicon Carbide (SiC) Cascode JFET designed for high-performance power applications. This device utilizes a unique cascode circuit configuration, integrating a normally-on SiC JFET with a Si MOSFET to achieve a normally-off SiC ...
Automotive grade P Channel depletion mode JFET onsemi MMBFJ175LT1G with AEC Q101 certification and RoHS compliance
Product OverviewThe MMBFJ175LT1 is a P-Channel, depletion-mode JFET chopper designed for automotive and other applications requiring unique site and control change requirements. These devices are AEC-Q101 qualified and PPAP capable, featuring Pb-Free, Halogen Free/BFR Free, and RoHS compliance...
Low level analog switching device onsemi J112 N channel switch Pb free with interchangeable source and drain terminals
Product OverviewThe J111, J112, J113, MMBFJ111, MMBFJ112, and MMBFJ113 are N-Channel switches designed for low-level analog switching, sample and hold circuits, and chopper-stabilized amplifiers. These devices are sourced from Process 51, and their source and drain terminals are interchangeable. ...
N Channel JFET onsemi J109 Transistor for Digital Switching Featuring Low On Resistance and Pb Free
Product OverviewThe J109 and MMBFJ108 are N-Channel JFETs designed for digital switching applications requiring very low on-resistance. These devices are sourced from Process 58 and are Pb-Free.Product AttributesBrand: ON SemiconductorOrigin: Sourced from Process 58Certifications: Pb-Free DevicesTec...
Low Current DC and Audio N Channel Switch onsemi MMBF4117 Suitable for High Impedance Signal Sources
Product OverviewThe MMBF4117 / MMBF4118 / MMBF4119 are N-Channel Switches designed for low current DC and audio applications. They offer excellent performance as input stages for sub-picoamp instrumentation or any high impedance signal sources.Product AttributesBrand: ON Semiconductor (formerly ...
TO247 3 packaged Silicon Carbide FET onsemi UF3C065080K3S ideal for replacing Si IGBTs and Si MOSFETs
Product OverviewThis Silicon Carbide (SiC) FET device utilizes a unique cascode configuration, integrating a normally-on SiC JFET with a Si MOSFET to create a normally-off SiC FET. Its standard gate-drive characteristics enable it to serve as a direct replacement for Si IGBTs, Si FETs, SiC MOSFETs, ...
SOT 23 packaged P Channel JFET transistor onsemi MMBFJ177LT1G offering Pb Free and RoHS compliant features
Product OverviewThe MMBFJ177LT1G and SMMBFJ177LT1G are P-Channel depletion mode JFET chopper transistors designed for various applications. The 'S' prefix denotes suitability for automotive and other applications with unique site and control change requirements, offering AEC-Q101 qualification and ...
silicon carbide fet onsemi UF4C120070K4S 1200 volt to 247 4l package suitable for pv inverters and power factor correction
Product Overview The UF4C120070K4S is a 1200 V, 72 m SiC FET designed for high-performance power applications. It utilizes a unique cascode configuration combining a normally-on SiC JFET with a Si MOSFET to achieve a normally-off device with standard gate-drive characteristics. This makes it a ...
