Low level analog switching device onsemi J112 N channel switch Pb free with interchangeable source and drain terminals
Key Attributes
Model Number:
J112
Product Custom Attributes
Operating Temperature:
-55℃~+150℃@(Tj)
Pd - Power Dissipation:
625mW
Drain Current (Idss):
5mA@15V
FET Type:
-
RDS(on):
50Ω
Gate-Source Breakdown Voltage (Vgss):
35V
Gate-Source Cutoff Voltage (VGS(off)):
1V@1uA
Mfr. Part #:
J112
Package:
TO-92-3L
Product Description
Product Overview
The J111, J112, J113, MMBFJ111, MMBFJ112, and MMBFJ113 are N-Channel switches designed for low-level analog switching, sample and hold circuits, and chopper-stabilized amplifiers. These devices are sourced from Process 51, and their source and drain terminals are interchangeable. They are available as Pb-Free devices.
Product Attributes
- Brand: ON Semiconductor
- Origin: Sourced from Process 51
- Interchangeable Terminals: Source & Drain
- Certifications: PbFree devices
Technical Specifications
| Model | Parameter | Value | Unit |
| J111 / J112 / J113 | Total Device Dissipation (PD) | 625 | mW |
| Derate Above 25C | 5.0 | mW/C | |
| Thermal Resistance, JunctiontoCase (R JC) | 125 | C/W | |
| Thermal Resistance, JunctiontoAmbient (R JA) | 200 | C/W | |
| GateSource Breakdown Voltage (V(BR)GSS) @ IG = 1.0 A, VDS = 0 | 35 | V | |
| Gate Reverse Current (IGSS) @ VGS = 15 V, VDS = 0 | 1.0 | nA | |
| GateSource CutOff Voltage (VGS(off)) @ VDS = 5 V, ID = 1.0 mA | J111: 3.0 to 10.0 V J112: 1.0 to 5.0 V J113: 0.5 to 3.0 V | V | |
| MMBFJ111 / MMBFJ112 / MMBFJ113 | Total Device Dissipation (PD) | 350 | mW |
| Derate Above 25C | 2.8 | mW/C | |
| Thermal Resistance, JunctiontoAmbient (R JA) | 357 | C/W | |
| GateSource Breakdown Voltage (V(BR)GSS) @ IG = 1.0 A, VDS = 0 | 35 | V | |
| Gate Reverse Current (IGSS) @ VGS = 15 V, VDS = 0 | 1.0 | nA | |
| GateSource CutOff Voltage (VGS(off)) @ VDS = 5 V, ID = 1.0 mA | J111: 3.0 to 10.0 V J112: 1.0 to 5.0 V J113: 0.5 to 3.0 V | V | |
| All Models | Drain Cutoff Leakage Current (ID(off)) @ VDS = 5.0 V, VGS = 10 V | 1.0 | nA |
| ZeroGate Voltage Drain Current (IDSS) @ VDS = 15 V, VGS = 0 | J111: 20 mA J112: 5.0 mA J113: 2.0 mA | mA | |
| DrainSource On Resistance (rDS(on)) @ VDS 0.1 V, VGS = 0 | J111: 30 J112: 50 J113: 100 | ||
| DrainGate & SourceGate On Capacitance (Cdg(on), Csg(on)) @ VDS = 0, VGS = 0, f = 1.0 MHz | 28 | pF | |
| DrainGate Off Capacitance (Cdg(off)) @ VDS = 0, VGS = 10 V, f = 1.0 MHz | 5.0 | pF | |
| SourceGate Off Capacitance (Csg(off)) @ VDS = 0, VGS = 10 V, f = 1.0 MHz | 5.0 | pF | |
| Forward Gate Current (IGF) | 50 | mA | |
| Operating and Storage Junction Temperature Range (TJ, TSTG) | 55 to 150 | C | |
| DrainGate Voltage (VDG) | 35 | V | |
| GateSource Voltage (VGS) | 35 | V |
2410121853_onsemi-J112_C719815.pdf
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