Dual NPN Transistor XZT MMDT3904 in SOT-363 Package Designed for Amplification and Switching Tasks
Key Attributes
Model Number:
MMDT3904
Product Custom Attributes
Current - Collector Cutoff:
50nA
Emitter-Base Voltage(Vebo):
6V
DC Current Gain:
100@10mA,1V
Transition Frequency(fT):
300MHz
Vce Saturation(VCE(sat)):
300mV@50mA,5mA
Type:
NPN
Pd - Power Dissipation:
200mW
Current - Collector(Ic):
200mA
Collector - Emitter Voltage VCEO:
40V
Mfr. Part #:
MMDT3904
Package:
SOT-363
Product Description
Product Overview
The MMDT3904 is a dual NPN transistor in a SOT-363 package. It is constructed using an epitaxial planar die and is ideal for low power amplification and switching applications.
Product Attributes
- Brand: X T ELECTRONICS
- Model: MMDT3904
- Package: SOT-363
- Type: Dual Transistor (NPN+NPN)
Technical Specifications
| Symbol | Parameter | Value | Units | Test Conditions |
| V(BR)CBO | Collector-base breakdown voltage | 60 | V | IC=10A,IE=0 |
| V(BR)CEO | Collector-emitter breakdown voltage | 40 | V | IC=1mA,IB=0 |
| V(BR)EBO | Emitter-base breakdown voltage | 6 | V | IE=10A,IC=0 |
| ICBO | Collector cut-off current | 0.05 | A | VCB=30V,IE=0 |
| IEBO | Emitter cut-off current | 0.05 | A | VEB=5V,IC=0 |
| hFE | DC current gain | 40 | VCE=1V,IC=0.1mA | |
| 70 | VCE=1V,IC=1mA | |||
| 100 | VCE=1V,IC=10mA | |||
| 60 | VCE=1V,IC=50mA | |||
| VCE(sat) | Collector-emitter saturation voltage | 0.2 | V | IC=10mA,IB=1mA |
| 0.3 | V | IC=50mA,IB=5mA | ||
| VBE(sat) | Base-emitter saturation voltage | 0.65 - 0.85 | V | IC=10mA,IB=1mA |
| 0.95 | V | IC=50mA,IB=5mA | ||
| fT | Transition frequency | 300 | MHz | VCE=20V,IC=10mA,f=100MHz |
| Cob | Collector output capacitance | 4 | pF | VCB=5V,IE=0,f=1MHz |
| NF | Noise figure | 5 | dB | VCE=5V,Ic=0.1mA,f=1kHz,RS=1K |
| td | Delay time | 35 | nS | |
| tr | Rise time | 35 | nS | VCC=3V, VBE(off)=-0.5V IC=10mA , IB1=-IB2= 1mA |
| ts | Storage time | 200 | nS | |
| tf | Fall time | 50 | nS | VCC=3V, IC=10mA IB1=-IB2=1mA |
| ICEX | Collector cut-off current | 0.05 | A | VCE=30V,VBE(off)=3V |
| PC | Collector Power Dissipation | 0.2 | W | @Ta=25 |
| TJ,Tstg | Operation Junction and Storage Temperature Range | -55~+150 |
2410121921_XZT-MMDT3904_C5805838.pdf
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