Power Switching Device Slkor SL18N20 Silicon N Channel VDMOSFET with Self Aligned Planar Technology
Key Attributes
Model Number:
SL18N20
Product Custom Attributes
Drain To Source Voltage:
200V
Current - Continuous Drain(Id):
18A
Operating Temperature -:
-55℃~+150℃
RDS(on):
120mΩ@10V,9A
Gate Threshold Voltage (Vgs(th)):
2V
Reverse Transfer Capacitance (Crss@Vds):
75pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
1.318nF
Pd - Power Dissipation:
104W
Gate Charge(Qg):
41nC@10V
Mfr. Part #:
SL18N20
Package:
TO-220-3L
Product Description
Product Overview
The SL18N20 is a silicon N-Channel Enhanced VDMOSFET utilizing self-aligned planar technology. This design enhances efficiency by reducing conduction losses, improving switching performance, and increasing avalanche energy. It is suitable for various power switching circuits, contributing to system miniaturization and higher efficiency.
Product Attributes
- Brand: SLKORMicro
- Model: SL18N20
- Package: TO-220-3L
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS = 0V, ID = 250A | 200 | 220 | -- | V |
| Zero Gate Voltage Drain Current | IDSS | VDS = 200V, VGS = 0V, TJ = 25C | -- | -- | 5 | A |
| Zero Gate Voltage Drain Current | IDSS | VDS = 160V, VGS = 0V, TJ = 125C | -- | -- | 100 | A |
| Gate-Source Leakage | IGSS | VGS = 20V | -- | -- | 100 | nA |
| Gate-Source Threshold Voltage | VGS(th) | VDS = VGS, ID = 250A | 2.0 | 3.0 | 4.0 | V |
| Drain-Source On-Resistance | RDS(on) | VGS = 10V, ID = 9A | -- | 120 | 150 | m |
| Input Capacitance | Ciss | VGS = 0V, VDS = 25V, f = 1.0MHz | -- | 1318 | -- | pF |
| Output Capacitance | Coss | VGS = 0V, VDS = 25V, f = 1.0MHz | -- | 180 | -- | pF |
| Reverse Transfer Capacitance | Crss | VGS = 0V, VDS = 25V, f = 1.0MHz | -- | 75 | -- | pF |
| Total Gate Charge | Qg | VDD = 160V, ID = 18A, VGS = 10V | -- | 41 | -- | nC |
| Gate-Source Charge | Qgs | VDD = 160V, ID = 18A, VGS = 10V | -- | 5.5 | -- | nC |
| Gate-Drain Charge | Qgd | VDD = 160V, ID = 18A, VGS = 10V | -- | 19.5 | -- | nC |
| Turn-on Delay Time | td(on) | VDD = 100V, ID = 18A, RG = 25 | -- | 24 | -- | ns |
| Turn-on Rise Time | tr | VDD = 100V, ID = 18A, RG = 25 | -- | 45 | -- | ns |
| Turn-off Delay Time | td(off) | VDD = 100V, ID = 18A, RG = 25 | -- | 101 | -- | ns |
| Turn-off Fall Time | tf | VDD = 100V, ID = 18A, RG = 25 | -- | 95 | -- | ns |
| Continuous Body Diode Current | IS | TC = 25 C | -- | -- | 18 | A |
| Pulsed Diode Forward Current | ISM | TC = 25 C | -- | -- | 72 | A |
| Body Diode Voltage | VSD | TJ = 25C, ISD = 18A, VGS = 0V | -- | -- | 1.4 | V |
| Reverse Recovery Time | trr | VGS = 0V,IS = 18A, diF/dt =100A /s | -- | 230 | -- | ns |
| Reverse Recovery Charge | Qrr | VGS = 0V,IS = 18A, diF/dt =100A /s | -- | 1.8 | -- | C |
| Drain-Source Voltage | VDS | -- | -- | 200 | V | |
| Continuous Drain Current | ID | -- | -- | 18 | A | |
| Pulsed Drain Current | IDM | (note1) | -- | -- | 72 | A |
| Gate-Source Voltage | VGS | -- | -- | 20 | V | |
| Single Pulse Avalanche Energy | EAS | (note2) | -- | -- | 340 | mJ |
| Avalanche Current | IAR | (note1) | -- | -- | 15 | A |
| Repetitive Avalanche Energy | EAR | note1) | -- | -- | 8.3 | mJ |
| Power Dissipation | PD | (TC = 25C) | -- | -- | 104 | W |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | ~ | +150 | C | |
| Thermal Resistance, Junction-to-Case | RthJC | -- | 1.2 | -- | C/W | |
| Thermal Resistance, Junction-to-Ambient | RthJA | -- | 62.5 | -- | C/W |
Applications
Uninterruptible Power Supply (UPS), Power Factor Correction (PFC).
2303300930_Slkor-SL18N20_C5375325.pdf
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