Single Bipolar Transistors
Switching amplifier NPN transistor YONGYUTAI 2N3904 epitaxial planar type with 100 milliamps collector current rating
Product OverviewNPN silicon epitaxial planar transistor designed for switching and amplifier applications. It is recommended as a complementary type to the PNP transistor 2N3906. This transistor is also available in the SOT-23 case under the type designation MMBT3904.Product AttributesBrand: Not specifiedOrigin: Not specifiedMaterial: Plastic-EncapsulateColor: Not specifiedCertifications: Not specifiedTechnical SpecificationsSymbolParameterTest ConditionsMinTypMaxUnitVCBOColl
Plastic encapsulated PNP transistor YONGYUTAI S8550 ideal for in diverse electronic circuit projects
Product OverviewThe S8550 is a PNP transistor in a TO-92 plastic-encapsulated package, designed for general-purpose applications. It features excellent hFE linearity.Product AttributesMaterial: Plastic-EncapsulateType: PNP TransistorsTechnical SpecificationsSymbolParameterTest ConditionsMinTypMaxUnitVCBOCollector Base Voltage-40VVCEOCollector Emitter Voltage-25VVEBOEmitter Base Voltage-5VICCollector Current-500mAPCCollector Power Dissipation(Ta=25C unless otherwise noted
Switching regulator transistor UTC 2SC5353BL-TN3-R high voltage NPN silicon for DC DC converter design
Product Overview The 2SC5353B is a high-voltage NPN silicon transistor designed for switching regulator and high-voltage switching applications, as well as high-speed DC-DC converters. It features excellent switching times with tR = 0.7s(MAX) and tF = 0.5s (MAX), and a high collector breakdown voltage of VCEO = 750V. Product Attributes Brand: UNISONIC TECHNOLOGIES CO., LTD Material: Silicon Certifications: Lead Free, Halogen Free Technical Specifications Ordering Number
Medium power NPN transistor UTC 2N6718G-B-AB3-R featuring 100V voltage and 850mW power dissipation for amplifier switching
Product OverviewThe UTC 2N6718 is a general-purpose NPN silicon transistor designed for medium power amplifier and switching applications, offering high power (850mW) and high current (1A) capabilities.Product AttributesBrand: UNISONIC TECHNOLOGIES CO., LTDProduct Code: 2N6718Type: NPN General Planar TransistorCertifications: Lead Free, Halogen FreeTechnical SpecificationsParameterSymbolSOT-89TO-126CTO-92UnitNotesCollector-Base VoltageVCBO100VCollector-Emitter VoltageVCEO100V
Silicon PNP Transistor UTC 2SB1260G-Q-AB3-R with High Current and Low Saturation Voltage Performance
Product OverviewThe UTC 2SB1260 is an epitaxial planar type PNP silicon transistor designed for high breakdown voltage and high current applications. It offers good hFE linearity and low VCE(SAT), making it suitable for various power transistor needs.Product AttributesBrand: UNISONIC TECHNOLOGIES CO., LTDMaterial: SiliconOrigin: Taiwan (implied by www.unisonic.com.tw)Technical SpecificationsParameterSymbolSOT-89TO-252UnitConditionsCollector-Base VoltageVCBO -80VCollector
npn transistor YONGYUTAI S8050 with plastic encapsulation and 625 milliwatt collector power dissipation
Product OverviewThis document details the S8050 NPN transistor, a plastic-encapsulated component designed for general-purpose applications. It offers complementary characteristics to the S8550 transistor and features a collector current of up to 0.5A.Product AttributesBrand: S8050Type: NPN TransistorEncapsulation: TO-92 PlasticOrigin: Not specifiedMaterial: Not specifiedColor: Not specifiedCertifications: Not specifiedTechnical SpecificationsSymbolParameterTest ConditionsMinT
TOSHIBA 2SC4541 TE12L ZC Silicon NPN Epitaxial Transistor Designed for Power Switching and Amplifier
TOSHIBA 2SC4541 Silicon NPN Epitaxial TransistorThe TOSHIBA 2SC4541 is a high-performance silicon NPN epitaxial transistor designed for power amplifier and power switching applications. It features a low saturation voltage (VCE(sat) = 0.5 V max) and high-speed switching time (tstg = 0.5 s typ.), making it suitable for efficient electronic circuits. The transistor is housed in a small flat package and is complementary to the 2SA1736.Product AttributesBrand: TOSHIBAType:
AEC Q101 Certified PNP Bipolar Transistor TOSHIBA 2SA1832-GR LF for Low Frequency Amplifier Circuits
Product OverviewThe 2SA1832 is a silicon PNP epitaxial bipolar transistor designed for low-frequency amplifier applications. It offers high voltage (VCEO = -50 V) and high collector current (IC = -150 mA max) capabilities, along with excellent hFE linearity. This transistor is AEC-Q101 qualified and is complementary to the 2SC4738, available in a small SSM package.Product AttributesBrand: ToshibaCertifications: AEC-Q101 qualifiedComplementary to: 2SC4738Package Type:
Audio Frequency Amplifier Transistor TOSHIBA 2SA1162-GR LF Silicon PNP with Low Noise Figure 1dB Typ
Product OverviewThe 2SA1162 is a silicon PNP epitaxial transistor from TOSHIBA, utilizing the PCT process. It is designed for general-purpose amplifier applications in audio frequencies. Key advantages include high voltage and current capabilities (VCEO = -50 V, IC = -150 mA max), excellent hFE linearity, high hFE (70 to 400), low noise (NF = 1dB typ.), and a complementary pairing with the 2SC2712. It comes in a small package.Product AttributesBrand: TOSHIBAType: Silicon PNP
Medium power amplification transistor YONGYUTAI MMBT5551 200 300 milliwatt high voltage NPN switch
Product OverviewThe MMBT5551 is a high voltage, fast-switching NPN power transistor. It is characterized by its high breakdown voltage, high current gain, and high switching speed, making it ideal for medium power amplification and switching applications. It is complementary to the MMBT5401.Product AttributesBrand: Yongyutai (implied by website)Origin: China (implied by website)Material: NPN Power TransistorColor: Not specifiedCertifications: Not specifiedTechnical Specificat
Low Collector Saturation Voltage PNP Silicon Transistor UTC 2SA1020G-Y-AB3-R for Power Amplifier Circuits
Product OverviewThe UTC 2SA1020 is a PNP silicon epitaxial transistor designed for power amplifier and power switching applications. It features a low collector saturation voltage (VCE(SAT) = -0.5V MAX at IC = -1A) and high-speed switching time (tSTG = 1.0s TYP). It is a complementary part to the UTC 2SC2655.Product AttributesBrand: UNISONIC TECHNOLOGIES CO., LTDMaterial: SILICON PNP EPITAXIAL TRANSISTORCertifications: Lead Free, Halogen FreeTechnical SpecificationsParameterS
Power Amplifier Silicon PNP Transistor TOSHIBA 2SA1941 O S1 E S for High Fidelity Audio Applications
Product OverviewThe TOSHIBA 2SA1941 is a Silicon PNP Triple Diffused Type transistor designed for Power Amplifier Applications. It features a high breakdown voltage of VCEO = -140 V (min) and is complementary to the 2SC5198. This transistor is recommended for the output stage of 70-W high-fidelity audio frequency amplifiers.Product AttributesBrand: TOSHIBAOrigin: Japan (implied by brand and typical datasheet origin)Certifications: RoHS COMPATIBLE / [[G]]/RoHS [[Pb]] (Note:
High current gain NPN silicon transistor UTC PZTA42G designed for in telephone switch and high voltage switch systems
Product OverviewThe UTC PZTA42/43 are high voltage NPN silicon transistors designed for telephone switch and high voltage switch applications. They offer high current gain and are complementary to the UTC PZTA92/93 series.Product AttributesBrand: UNISONIC TECHNOLOGIES CO., LTDMaterial: SiliconCertifications: Lead Free, Halogen Free (indicated by 'G' in ordering number)Technical SpecificationsParameterSymbolPZTA42 RatingPZTA43 RatingUnitConditionsCollector-Base VoltageVCBO3002
High Current Switching NPN Transistor UTC 2SD1804L-T-TN3-R with Fast Switching and Excellent Linearity
Product Overview The UNISONIC TECHNOLOGIES CO., LTD 2SD1804 is an NPN Silicon Transistor designed for high current switching applications. It offers a low collector-to-emitter saturation voltage, high current capability, high transition frequency (fT), excellent linearity of hFE, and fast switching times. Its small and slim package facilitates the miniaturization of electronic devices. Product Attributes Brand: UNISONIC TECHNOLOGIES CO., LTD Material: Silicon Certifications:
General purpose amplifier transistor UTC UD2195G-AB3-R SOT-89T R NPN epitaxial planar silicon device
Product OverviewThe UTC UD2195 is an NPN epitaxial planar silicon transistor designed for general-purpose amplifier and low-speed switching applications.Product AttributesBrand: UNISONIC TECHNOLOGIES CO., LTDOrigin: Taiwan (implied by URL)Material: SiliconCertifications: Lead Free, Halogen FreeTechnical SpecificationsParameterSymbolSOT-223SOT-89UnitNotesCollector-Base VoltageVCBO130VCollector-Emitter VoltageVCEO120VEmitter-Base VoltageVEBO5VCollector Current DCIC4ACollector
switching NPN planar transistor UTC 2SD1816G-R-TF3-T featuring slim package and performance for electronics
Product OverviewThe UNISONIC TECHNOLOGIES CO., LTD 2SD1816 is an NPN planar transistor designed for high current switching applications. It features low collector-to-emitter saturation voltage, good linearity of hFE, a small and slim package for compactness, high fT, and fast switching speed. This makes it suitable for various electronic sets requiring efficient and rapid switching.Product AttributesBrand: UNISONIC TECHNOLOGIES CO., LTDProduct Type: NPN Planar TransistorCerti
Medium power NPN transistor UTC D882SSG-P-AE3-R ideal for DC-DC converters and audio amplifier applications
D882SS NPN SILICON TRANSISTORThe D882SS is a medium power, low voltage NPN silicon transistor designed for applications requiring high current output up to 3A. It features low saturation voltage and is complementary to the B772SS. Ideal for audio power amplifiers, DC-DC converters, and voltage regulators.Product AttributesBrand: UNISONIC TECHNOLOGIES CO., LTDMaterial: SILICON TRANSISTOROrigin: Taiwan (implied by .tw domain)Technical SpecificationsParameterSymbolTest
High current NPN transistor UTC PZT1816G-S-AA3-R featuring fast switching speed and compact SOT-223 package design
Product OverviewThe UNISONIC PZT1816 is an NPN planar transistor designed for high current switching applications. It features a low collector-to-emitter saturation voltage, good linearity of hFE, and a small, slim package that facilitates compact set designs. With a high transition frequency (fT) and fast switching speed, this transistor is suitable for demanding electronic circuits.Product AttributesBrand: UNISONIC TECHNOLOGIES CO., LTDOrigin: TaiwanProduct Type: NPN Planar
Silicon Transistor UTC 2SD2470L-E-T9S-B Featuring Low Saturation Voltage and 5A Collector Current
Product OverviewThe 2SD2470 is an NPN Silicon Transistor designed for strobo and DC/DC converters. It features a low saturation voltage of 0.25V (typ) at IC/IB= 3A/0.1A and can handle a collector current of 5A. This transistor is available in TO-92SP, TO-220, and SOT-89 packages.Product AttributesBrand: UNISONIC TECHNOLOGIES CO., LTDCertifications: Lead Free, Halogen FreeTechnical SpecificationsOrdering NumberPackagePin AssignmentPackingCollector-Emitter Voltage (VCEO
NPN epitaxial silicon transistor UTC 2SD1616AG-G-T92-K for audio frequency power amplification and switching
Product OverviewThe UNISONIC TECHNOLOGIES CO., LTD 2SD1616/A is an NPN epitaxial silicon transistor designed for audio frequency power amplification and medium-speed switching applications.Product AttributesBrand: UNISONIC TECHNOLOGIES CO., LTDMaterial: SiliconType: NPN Epitaxial Silicon TransistorTechnical SpecificationsParameterSymbol2SD16162SD1616AUnitTest ConditionsMinTypMaxCollector to Base VoltageVCBO60120VCollector to Emitter VoltageVCEO5060VEmitter to Base VoltageVEBO
