Medium power amplification transistor YONGYUTAI MMBT5551 200 300 milliwatt high voltage NPN switch
Key Attributes
Model Number:
MMBT5551 200-300
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
50nA
DC Current Gain:
300@10mA,5V
Transition Frequency(fT):
300MHz
Vce Saturation(VCE(sat)):
200mV@50mA,5mA
Pd - Power Dissipation:
300mW
Current - Collector(Ic):
600mA
Collector - Emitter Voltage VCEO:
160V
Mfr. Part #:
MMBT5551 200-300
Package:
SOT-23
Product Description
Product Overview
The MMBT5551 is a high voltage, fast-switching NPN power transistor. It is characterized by its high breakdown voltage, high current gain, and high switching speed, making it ideal for medium power amplification and switching applications. It is complementary to the MMBT5401.
Product Attributes
- Brand: Yongyutai (implied by website)
- Origin: China (implied by website)
- Material: NPN Power Transistor
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Max | Unit |
| ABSOLUTE MAXIMUM RATINGS | |||||
| Collector-base voltage | VCBO | TC=25C | 180 | V | |
| Collector-emitter voltage | VCEO | TC=25C | 160 | V | |
| Emitter-base voltage | VEBO | TC=25C | 6 | V | |
| Collector current | IC | TC=25C | 0.6 | A | |
| Collector Power Dissipation | PC | TC=25C | 300 | mW | |
| Junction Temperature | Tj | 150 | C | ||
| Storage Temperature | Tstg | -55 | 150 | C | |
| Thermal Resistance Junction To Ambient | RJA | 416 | C/W | ||
| ELECTRICAL CHARACTERISTICS | |||||
| Collector-base breakdown voltage | V(BR)CBO | IC=100A,IE=0 | 180 | V | |
| Collector-emitter breakdown voltage | V(BR)CEO* | IC=1mA,IB=0 | 160 | V | |
| Emitter-base breakdown voltage | V(BR)EBO | IE=10A,IC=0 | 6 | V | |
| Collector cutoff current | ICBO | VCB=120V,IE=0 | 50 | nA | |
| Emitter cut-off current | IEBO | VEB=4V,IC=0 | 50 | nA | |
| DC Current Gain (hFE1) | hFE1* | VCE=5V,IC=1mA | 80 | ||
| DC Current Gain (hFE2 - Classification A) | hFE2* | VCE=5V,IC=10mA | 100 | 200 | |
| DC Current Gain (hFE2 - Classification B) | hFE2* | VCE=5V,IC=10mA | 200 | 300 | |
| DC Current Gain (hFE2 - Classification C) | hFE2* | VCE=5V,IC=10mA | 300 | 450 | |
| DC Current Gain (hFE3) | hFE3* | VCE=5V,IC=50mA | 50 | ||
| Collector-emitter saturation voltage | VCE(sat)* | IC=10mA,IB=1mA | 0.15 | V | |
| Collector-emitter saturation voltage | VCE(sat)* | IC=50mA,IB=5mA | 0.2 | V | |
| Base-Emitter Saturation Voltage | VBE(sat)* | IC=10mA,IB=1mA | 1 | V | |
| Base-Emitter Saturation Voltage | VBE(sat)* | IC=50mA,IB=5mA | 1 | V | |
| Transition frequency | fT | VCE=10V, IC= 10mA, f=100MHz | 100 | 300 | MHz |
| Collector output capacitance | Cob | VCB=10V, IE=0, f=1MHz | 6 | pF | |
2512301548_YONGYUTAI-MMBT5551-200-300_C50201829.pdf
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