complementary mosfets featuring xnrusemi xr20g10 with n channel and p channel fast switching capabilities
Key Attributes
Model Number:
XR20G10
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
15A;10A
Operating Temperature -:
-55℃~+150℃
RDS(on):
65mΩ@10V;180mΩ@10V
Type:
N-Channel + P-Channel
Reverse Transfer Capacitance (Crss@Vds):
42pF;29pF
Output Capacitance(Coss):
53pF;41pF
Input Capacitance(Ciss):
1.22nF;1.228nF
Gate Charge(Qg):
20.6nC@10V;19nC@10V
Mfr. Part #:
XR20G10
Package:
TO-252-4L
Product Description
XR20G10 N-Ch and P-Ch Fast Switching MOSFETs
Product Description
The XR20G10 is a high-performance complementary N-channel and P-channel MOSFET series featuring extreme high cell density. This design provides excellent RDS(ON) and gate charge characteristics, making it ideal for synchronous buck converter applications. The XR20G10 meets RoHS and Green Product requirements and is 100% EAS guaranteed with full functional reliability.
Product Attributes
- Brand: power-mos.com
- Certifications: RoHS, Green Device Available
Technical Specifications
| Symbol | Parameter | N-Channel Conditions | N-Channel Typ. | N-Channel Max. | N-Channel Unit | P-Channel Conditions | P-Channel Typ. | P-Channel Max. | P-Channel Unit |
|---|---|---|---|---|---|---|---|---|---|
| VDS | Drain-Source Voltage | 100 | V | -100 | V | ||||
| VGS | Gate-Source Voltage | 20 | V | 20 | V | ||||
| ID@TA=25 | Continuous Drain Current, VGS @ 10V | 15.0 | A | -10.0 | A | ||||
| ID@TA=70 | Continuous Drain Current, VGS @ 10V | 10.0 | A | -5 | A | ||||
| IDM | Pulsed Drain Current | 25 | A | -18 | A | ||||
| EAS | Single Pulse Avalanche Energy | 22.5 | mJ | 35.3 | mJ | ||||
| IAS | Avalanche Current | 22.6 | A | -26.6 | A | ||||
| PD@TA=25 | Total Power Dissipation | 3.5 | W | 3.5 | W | ||||
| TSTG | Storage Temperature Range | -55 to 150 | -55 to 150 | ||||||
| TJ | Operating Junction Temperature Range | -55 to 150 | -55 to 150 | ||||||
| RJA | Thermal Resistance Junction-Ambient | --- | 70 | /W | --- | 70 | /W | ||
| RJC | Thermal Resistance Junction-Case | --- | 61.5 | /W | --- | 61.5 | /W | ||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=250uA | 100 | V | VGS=0V , ID=-250uA | -100 | V | ||
| RDS(ON) | Static Drain-Source On-Resistance | VGS=10V , ID=5A | 65 | m | VGS=-10V , ID=-3A | 180 | 220 | m | |
| RDS(ON) | Static Drain-Source On-Resistance | VGS=4.5V , ID=3A | 75 | 105 | m | VGS=-4.5V , ID=-2A | 210 | 255 | m |
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =250uA | 1.2 | 2.5 | V | VGS=VDS , ID =-250uA | -1.2 | -2.5 | V |
| IDSS | Drain-Source Leakage Current | VDS=100V , VGS=0V , TJ=25 | 1 | uA | VDS=-80V , VGS=0V , TJ=25 | -1 | uA | ||
| IDSS | Drain-Source Leakage Current | VDS=100V, VGS=0V , TJ=100 | 100 | uA | VDS=-80V , VGS=0V , TJ=85 | -30 | uA | ||
| IGSS | Gate-Source Leakage Current | VGS=20V , VDS=0V | 100 | nA | VGS=20V , VDS=0V | 100 | nA | ||
| gfs | Forward Transconductance | VDS=5V , ID=5A | 12 | S | |||||
| Rg | Gate Resistance | VDS=0V , VGS=0V , f=1MHz | 1.3 | VDS=0V , VGS=0V , f=1MHz | 13 | ||||
| Qg | Total Gate Charge | VDS=50V , VGS=10V , ID=5A | nC | VDS=-50V , VGS=-10V , ID=-2A | 19 | nC | |||
| Qgs | Gate-Source Charge | nC | 3.4 | nC | |||||
| Qgd | Gate-Drain Charge | nC | 2.9 | nC | |||||
| Td(on) | Turn-On Delay Time | VGS=10V, VDD=30V, RG=2.5, ID=5A | ns | VDD=-30V , VGS=-10V , RG=3.3, ID=-1A | 9 | ns | |||
| Tr | Rise Time | ns | 6 | ns | |||||
| Td(off) | Turn-Off Delay Time | ns | 39 | ns | |||||
| Tf | Fall Time | ns | 33 | ns | |||||
| Ciss | Input Capacitance | VDS=50V , VGS=0V , f=1MHz | pF | VDS=-30V , VGS=0V , f=1MHz | 1228 | pF | |||
| Coss | Output Capacitance | pF | 41 | pF | |||||
| Crss | Reverse Transfer Capacitance | pF | 29 | pF | |||||
| IS | Continuous Source Current | VG=VD=0V , Force Current | 15 | A | VG=VD=0V , Force Current | -10.0 | A | ||
| VSD | Diode Forward Voltage | VGS=0V , IS=20A , TJ=25C | 1.2 | V | VGS=0V , IS=-1A , TJ=25 | -1.2 | V |
2507241530_XNRUSEMI-XR20G10_C49328946.pdf
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