Bipolar Transistor Arrays
Switching amplifier NPN transistor YONGYUTAI 2N3904 epitaxial planar type with 100 milliamps collector current rating
Product OverviewNPN silicon epitaxial planar transistor designed for switching and amplifier applications. It is recommended as a complementary type to the PNP transistor 2N3906. This transistor is also available in the SOT-23 case under the type designation MMBT3904.Product AttributesBrand: Not ...
Plastic encapsulated PNP transistor YONGYUTAI S8550 ideal for in diverse electronic circuit projects
Product OverviewThe S8550 is a PNP transistor in a TO-92 plastic-encapsulated package, designed for general-purpose applications. It features excellent hFE linearity.Product AttributesMaterial: Plastic-EncapsulateType: PNP TransistorsTechnical SpecificationsSymbolParameterTest ConditionsMinTypMaxUni...
Switching regulator transistor UTC 2SC5353BL-TN3-R high voltage NPN silicon for DC DC converter design
Product Overview The 2SC5353B is a high-voltage NPN silicon transistor designed for switching regulator and high-voltage switching applications, as well as high-speed DC-DC converters. It features excellent switching times with tR = 0.7s(MAX) and tF = 0.5s (MAX), and a high collector breakdown ...
Medium power NPN transistor UTC 2N6718G-B-AB3-R featuring 100V voltage and 850mW power dissipation for amplifier switching
Product OverviewThe UTC 2N6718 is a general-purpose NPN silicon transistor designed for medium power amplifier and switching applications, offering high power (850mW) and high current (1A) capabilities.Product AttributesBrand: UNISONIC TECHNOLOGIES CO., LTDProduct Code: 2N6718Type: NPN General ...
Silicon PNP Transistor UTC 2SB1260G-Q-AB3-R with High Current and Low Saturation Voltage Performance
Product OverviewThe UTC 2SB1260 is an epitaxial planar type PNP silicon transistor designed for high breakdown voltage and high current applications. It offers good hFE linearity and low VCE(SAT), making it suitable for various power transistor needs.Product AttributesBrand: UNISONIC TECHNOLOGIES CO...
npn transistor YONGYUTAI S8050 with plastic encapsulation and 625 milliwatt collector power dissipation
Product OverviewThis document details the S8050 NPN transistor, a plastic-encapsulated component designed for general-purpose applications. It offers complementary characteristics to the S8550 transistor and features a collector current of up to 0.5A.Product AttributesBrand: S8050Type: NPN ...
TOSHIBA RN1105MFV L3F CT Silicon NPN Bipolar Transistor Using PCT Process with Integrated Bias Resistor
Product OverviewThe RN1101MFV to RN1106MFV series are silicon NPN epitaxial type bipolar transistors featuring an integrated bias resistor. These transistors, manufactured using the PCT process, are designed for switching, inverter circuits, interfacing, and driver circuits. They offer ultra-small ...
TOSHIBA RN2302 LF PNP Bipolar Transistor Featuring Built in Bias Resistor for Compact Electronic Designs
RN2301 to RN2306 Bipolar TransistorsThe RN2301 to RN2306 series are silicon PNP epitaxial bipolar transistors featuring a built-in bias resistor (PCT Process). These transistors are designed for various applications including switching, inverter circuits, interfacing, and driver circuits. The ...
TOSHIBA 2SC4541 TE12L ZC Silicon NPN Epitaxial Transistor Designed for Power Switching and Amplifier
TOSHIBA 2SC4541 Silicon NPN Epitaxial TransistorThe TOSHIBA 2SC4541 is a high-performance silicon NPN epitaxial transistor designed for power amplifier and power switching applications. It features a low saturation voltage (VCE(sat) = 0.5 V max) and high-speed switching time (tstg = 0.5 s typ.), ...
AEC Q101 Certified PNP Bipolar Transistor TOSHIBA 2SA1832-GR LF for Low Frequency Amplifier Circuits
Product OverviewThe 2SA1832 is a silicon PNP epitaxial bipolar transistor designed for low-frequency amplifier applications. It offers high voltage (VCEO = -50 V) and high collector current (IC = -150 mA max) capabilities, along with excellent hFE linearity. This transistor is AEC-Q101 qualified and ...
Audio Frequency Amplifier Transistor TOSHIBA 2SA1162-GR LF Silicon PNP with Low Noise Figure 1dB Typ
Product OverviewThe 2SA1162 is a silicon PNP epitaxial transistor from TOSHIBA, utilizing the PCT process. It is designed for general-purpose amplifier applications in audio frequencies. Key advantages include high voltage and current capabilities (VCEO = -50 V, IC = -150 mA max), excellent hFE ...
Medium power amplification transistor YONGYUTAI MMBT5551 200 300 milliwatt high voltage NPN switch
Product OverviewThe MMBT5551 is a high voltage, fast-switching NPN power transistor. It is characterized by its high breakdown voltage, high current gain, and high switching speed, making it ideal for medium power amplification and switching applications. It is complementary to the MMBT5401.Product ...
Low Collector Saturation Voltage PNP Silicon Transistor UTC 2SA1020G-Y-AB3-R for Power Amplifier Circuits
Product OverviewThe UTC 2SA1020 is a PNP silicon epitaxial transistor designed for power amplifier and power switching applications. It features a low collector saturation voltage (VCE(SAT) = -0.5V MAX at IC = -1A) and high-speed switching time (tSTG = 1.0s TYP). It is a complementary part to the ...
TOSHIBA RN1510 TE85L F Silicon NPN Epitaxial Transistor Designed for Inverter and Interface Circuits
Product OverviewThe RN1510 and RN1511 are silicon NPN epitaxial transistors utilizing a PCT process, designed for switching, inverter circuits, interface circuits, and driver circuits. These devices are housed in a SMV (super mini type with 5 leads) package and feature built-in bias resistors, ...
Power Amplifier Silicon PNP Transistor TOSHIBA 2SA1941 O S1 E S for High Fidelity Audio Applications
Product OverviewThe TOSHIBA 2SA1941 is a Silicon PNP Triple Diffused Type transistor designed for Power Amplifier Applications. It features a high breakdown voltage of VCEO = -140 V (min) and is complementary to the 2SC5198. This transistor is recommended for the output stage of 70-W high-fidelity ...
High current gain NPN silicon transistor UTC PZTA42G designed for in telephone switch and high voltage switch systems
Product OverviewThe UTC PZTA42/43 are high voltage NPN silicon transistors designed for telephone switch and high voltage switch applications. They offer high current gain and are complementary to the UTC PZTA92/93 series.Product AttributesBrand: UNISONIC TECHNOLOGIES CO., LTDMaterial: SiliconCertif...
High Current Switching NPN Transistor UTC 2SD1804L-T-TN3-R with Fast Switching and Excellent Linearity
Product Overview The UNISONIC TECHNOLOGIES CO., LTD 2SD1804 is an NPN Silicon Transistor designed for high current switching applications. It offers a low collector-to-emitter saturation voltage, high current capability, high transition frequency (fT), excellent linearity of hFE, and fast switching ...
General purpose amplifier transistor UTC UD2195G-AB3-R SOT-89T R NPN epitaxial planar silicon device
Product OverviewThe UTC UD2195 is an NPN epitaxial planar silicon transistor designed for general-purpose amplifier and low-speed switching applications.Product AttributesBrand: UNISONIC TECHNOLOGIES CO., LTDOrigin: Taiwan (implied by URL)Material: SiliconCertifications: Lead Free, Halogen ...
switching NPN planar transistor UTC 2SD1816G-R-TF3-T featuring slim package and performance for electronics
Product OverviewThe UNISONIC TECHNOLOGIES CO., LTD 2SD1816 is an NPN planar transistor designed for high current switching applications. It features low collector-to-emitter saturation voltage, good linearity of hFE, a small and slim package for compactness, high fT, and fast switching speed. This ...
Darlington transistor array with 50V voltage resistance and 500mA collector current UMW ULN2001D UMW
Product OverviewThe UMW ULN2001D is a single-chip integrated high voltage, high current Darlington transistor array designed with three independent drive channels. It features internal freewheeling diodes for inductive load driving, a 500mA collector output current per channel, and high voltage ...
