General purpose amplifier transistor UTC UD2195G-AB3-R SOT-89T R NPN epitaxial planar silicon device

Key Attributes
Model Number: UD2195G-AB3-R SOT-89T/R
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
1mA
Number:
1 NPN
Vce Saturation(VCE(sat)):
2V@2A,2mA
Pd - Power Dissipation:
600mW
Current - Collector(Ic):
4A
Collector - Emitter Voltage VCEO:
120V
Mfr. Part #:
UD2195G-AB3-R SOT-89T/R
Package:
SOT-89
Product Description

Product Overview

The UTC UD2195 is an NPN epitaxial planar silicon transistor designed for general-purpose amplifier and low-speed switching applications.

Product Attributes

  • Brand: UNISONIC TECHNOLOGIES CO., LTD
  • Origin: Taiwan (implied by URL)
  • Material: Silicon
  • Certifications: Lead Free, Halogen Free

Technical Specifications

ParameterSymbolSOT-223SOT-89UnitNotes
Collector-Base VoltageVCBO130V
Collector-Emitter VoltageVCEO120V
Emitter-Base VoltageVEBO5V
Collector Current DCIC4A
Collector Current PulseIC6APulse Width_350s, Duty Cycle_2%
Collector DissipationPC10.6WDevice mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
Junction TemperatureTJ+150C
Storage TemperatureTSTG-55 ~ +150C
Junction to AmbientJA125208C/WDevice mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
Collector-Base Breakdown VoltageBVCBO130VIC=100A, IE=0
Collector-Emitter Breakdown VoltageBVCEO120VIC=1mA, IB=0
Base-Emitter Turn-On VoltageVBE(ON)2.8VVCE =4V, IC=2A
Collector Cutoff CurrentICBO1mAVCB=100V, IE=0
Collector Cutoff CurrentICEO2mAVCE =50V, IB=0
Emitter Cutoff CurrentIEBO2mAVEB=5V, IC=0
DC Current GainhFE1000VCE=4V, IC=1A
DC Current GainhFE500VCE=4V, IC=2A
Collector-Emitter Saturation VoltageVCE(SAT)2VIC=2A, IB=2mA
Output CapacitanceCob200pFVCB=10V, IE=0A, f=1MHz

2409272232_UTC-UD2195G-AB3-R-SOT-89T-R_C5124159.pdf

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