High Voltage N channel MOSFET Slkor SL8N100 1000V 8A Drain Current Continuous for Power Electronics
Key Attributes
Model Number:
SL8N100
Product Custom Attributes
Drain To Source Voltage:
1kV
Current - Continuous Drain(Id):
5A
Operating Temperature -:
-55℃~+150℃
RDS(on):
2.3Ω@10V,4A
Gate Threshold Voltage (Vgs(th)):
5V
Reverse Transfer Capacitance (Crss@Vds):
12pF@25V
Number:
1 N-channel
Pd - Power Dissipation:
167W
Input Capacitance(Ciss):
687pF@25V
Gate Charge(Qg):
14nC@10V
Mfr. Part #:
SL8N100
Package:
TO-220
Product Description
Product Overview
The SL8N100 Series is a high-performance N-channel MOSFET designed for demanding power applications. It features low gate charge, low Crss, and fast switching speeds, making it ideal for high-frequency switching mode power supplies and electronic ballasts. The device is 100% avalanche tested and offers improved dv/dt capability, ensuring reliability and efficiency. It is RoHS compliant.
Product Attributes
- Brand: SLKORMicro
- Certifications: RoHS
Technical Specifications
| Parameter | Symbol | Tests conditions | Min | Type | Max | Unit | Notes | |
| Drain-Source Voltage | VDSS | 1000 | V | |||||
| Drain Current-continuous | ID | T=25 | 8 | A | ||||
| Drain Current-continuous | ID | T=100 | 5 | A | ||||
| Drain Current-pulse | IDM | 32* | A | *Drain current limited by maximum junction temperature | ||||
| Gate-Source Voltage | VGS | 30 | V | |||||
| Single pulse avalanche energy | EAS | L=33.0mH, IAS=8A, VDD=50V, RG=25 ,Starting TJ=25 | 650 | mJ | 2 | |||
| Avalanche Current | IAR | 8 | A | 1 | ||||
| Repetitive Avalanche Energy | EAR | 393 | mJ | 1 | ||||
| Power Dissipation (TO-220\TO-247) | PD | TC=25 | 167 | W | ||||
| Derate above 25 | 1.43 | W/ | ||||||
| Power Dissipation (TO-263\TO-262) | PD | TC=25 | 83 | W | ||||
| Derate above 25 | 0.34 | W/ | ||||||
| Power Dissipation (TO-220F) | PD | TC=25 | 31.7 | W | ||||
| Derate above 25 | 0.25 | W/ | ||||||
| Operating and Storage Temperature Range | TJ,TSTG | -55 | +150 | |||||
| Peak Diode Recovery dv/dt | dv/dt | ISD 8A,di/dt 200A/s,VDDBVDSS, Starting TJ=25 | 4.5 | V/ns | 3 | |||
| Maximum Lead Temperature for Soldering Purposes | TL | 300 | ||||||
| Breakdown Voltage | BVDSS | ID=250A,VGS=0V | 1000 | - | V | |||
| Breakdown Voltage Temperature Coefficient | BVDSS/ TJ | ID=250A,referenced to 25 | 1.05 | V/ | ||||
| Zero Gate Voltage Drain Current | IDSS | VDS=1000V,VGS=0V TC=25 | - | 1 | A | |||
| VDS=800V,TC =125 | - | 10 | A | |||||
| Gate body leakage current | IGSS | VDS=0V,VGS=30V | - | 100 | nA | |||
| Gate Threshold Voltage | VGS(th) | VDS=VGS,ID=250A | 3.0 | - | 5.0 | V | ||
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V,ID=4A | 1.8 | 2.3 | ||||
| Forward Transconductance | gFS | VDS=40V,ID=4A | 5.6 | - | S | 4 | ||
| Input capacitance | Ciss | VDS=25V, VGS=0V, f=1.0MHZ | 687 | - | pF | |||
| Output capacitance | Coss | 67 | - | pF | ||||
| Reverse transfer capacitance | Crss | 12 | - | pF | ||||
| Turn-On delay time | td(on) | VDD=500V,ID=8A, RGEN=25 | 13 | - | ns | 4,5 | ||
| Turn-On rise time | tr | 22 | - | ns | ||||
| Turn-Off delay time | td(Off) | 63 | - | ns | ||||
| Turn-Off rise time | tf | 19 | - | ns | ||||
| Total Gate Charge | Qg | VDS=750V,ID=4A, VGS=10V | 14 | - | nC | 4,5 | ||
| Gate-Source charge | Qgs | 4 | - | nC | ||||
| Gate-Drain charge | Qg | 5 | - | nC | ||||
| Diode Forward Voltage | VSD | VGS=0V,IS=8A | - | 1.4 | V | 3 | ||
| Maximum Pulsed Drain-Source Diode Forward Current | ISM | - | - | 24 | A | |||
| Maximum Continuous Drain Source Diode Forward Current | IS | - | - | 8 | A | |||
| Reverse recovery time | trr | VGS=0V, IS=4A dIF/dt=100A/s Tc=25 | 159 | - | ns | 4 | ||
| VGS=0V, IS=3A dIF/dt=100A/s Tc=100 | 153 | - | ns | 4 | ||||
| Reverse recovery charge | Qrr | VGS=0V, IS=4A dIF/dt=100A/s Tc=25 | 693 | - | nC | 4 | ||
| VGS=0V, IS=3A dIF/dt=100A/s Tc=100 | 685 | - | nC | 4 | ||||
| Thermal Resistance, junction to Case | Rth(j-C) | TO-220/ TO-247 | 0.78 | /W | ||||
| TO-263/ TO-262 | 3 | /W | ||||||
| TO-220F | 3.94 | /W | ||||||
| Thermal Resistance, Junction to Ambient | Rth(j-A) | TO-220/ TO-247 | 62.5 | /W | ||||
| TO-263/ TO-262 | 65 | /W | ||||||
| TO-220F | 80 | /W |
2409302301_Slkor-SL8N100_C6800594.pdf
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