Durable YANGJIE MG450HF12TLC2 IGBT module featuring trench technology for motion control welding and UPS
Key Attributes
Model Number:
MG450HF12TLC2
Product Custom Attributes
Pd - Power Dissipation:
2.307kW
Td(off):
502ns
Td(on):
161ns
Operating Temperature:
-40℃~+150℃
Collector-Emitter Breakdown Voltage (Vces):
1.2kV
Reverse Transfer Capacitance (Cres):
1.1nF
Input Capacitance(Cies):
25nF
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
5.2V@12mA
Gate Charge(Qg):
3.62uC
Pulsed Current- Forward(Ifm):
900A
Switching Energy(Eoff):
28.5mJ
Turn-On Energy (Eon):
23.2mJ
Mfr. Part #:
MG450HF12TLC2
Package:
C2
Product Description
Product Overview
The MG450HF12TLC2 is a high-performance IGBT module designed for motion/servo control, high-frequency switching applications, UPS, and welding machines. It features low Vce(sat) with Trench technology, low switching losses (particularly Eoff), a positive temperature coefficient for Vce(sat), and high short circuit capability (10s). The module includes an ultra-fast and soft recovery anti-parallel FWD, a low inductance package, and a maximum junction temperature of 175.
Product Attributes
- Brand: S-M449 (implied by product code)
- Compliance: RoHS
- Certifications: COMPLIANT RoHS
Technical Specifications
| Parameter | Symbol | Conditions | Value | Unit | Min. | Typ. | Max. |
| IGBT Absolute Maximum Ratings | |||||||
| Collector-Emitter Voltage | VCES | VGE=0V, IC =1mA, Tvj=25 | 1200 | V | |||
| Continuous Collector Current | IC | Tc=100 | 450 | A | |||
| Repetitive Peak Collector Current | ICRM | tp=1ms | 900 | A | |||
| Gate-Emitter Voltage | VGES | Tvj=25 | 20 | V | |||
| Total Power Dissipation | Ptot | Tc=25 Tvjmax=175 | 2307 | W | |||
| IGBT Characteristic Values | |||||||
| Gate-emitter Threshold Voltage | VGE(th) | VGE=VCE, IC=12mA,Tvj=25 | V | 5.2 | 5.8 | 6.4 | |
| Collector-Emitter Cut-off Current | ICES | VCE=1200V,VGE=0V,Tvj=25 | mA | 1.0 | |||
| Collector-Emitter Saturation Voltage | VCE(sat) | Ic=450A,VGE=15V, Tvj=25 | V | 1.90 | 2.25 | ||
| Ic=450A,VGE=15V, Tvj=125 | V | 2.15 | |||||
| Ic=450A,VGE=15V, Tvj=150 | V | 2.20 | |||||
| Gate Charge | QG | 3.62 | uC | ||||
| Internal Gate Resistance | RGint | 1.67 | |||||
| Input Capacitance | Cies | VCE=25V,VGE =0V, f=1MHz,Tvj=25 | 25 | nF | |||
| Reverse Transfer Capacitance | Cres | VCE=25V,VGE =0V, f=1MHz,Tvj=25 | 1.1 | nF | |||
| Gate-Emitter leakage current | IGES | VCE=0 V, VGE=20V,Tvj = 25 | nA | 400 | |||
| Turn-on Delay Time | td(on) | IC=450 A VCE=600 V VGE= 15V RG=1.8 Tvj=25 | 161 | ns | |||
| IC=450 A VCE=600 V VGE= 15V RG=1.8 Tvj=125 | 192 | ns | |||||
| IC=450 A VCE=600 V VGE= 15V RG=1.8 Tvj=150 | 197 | ns | |||||
| Rise Time | tr | IC=450 A VCE=600 V VGE= 15V RG=1.8 Tvj=25 | 52 | ns | |||
| IC=450 A VCE=600 V VGE= 15V RG=1.8 Tvj=125 | 63 | ns | |||||
| IC=450 A VCE=600 V VGE= 15V RG=1.8 Tvj=150 | 68 | ns | |||||
| Turn-off Delay Time | td(off) | IC=450 A VCE=600 V VGE= 15V RG=1.8 Tvj=25 | 502 | ns | |||
| IC=450 A VCE=600 V VGE= 15V RG=1.8 Tvj=125 | 536 | ns | |||||
| IC=450 A VCE=600 V VGE= 15V RG=1.8 Tvj=150 | 543 | ns | |||||
| Fall Time | tf | IC=450 A VCE=600 V VGE= 15V RG=1.8 Tvj=25 | 96 | ns | |||
| IC=450 A VCE=600 V VGE= 15V RG=1.8 Tvj=125 | 135 | ns | |||||
| IC=450 A VCE=600 V VGE= 15V RG=1.8 Tvj=150 | 137 | ns | |||||
| Energy Dissipation During Turn-on Time | Eon | IC=450 A VCE=600 V VGE= 15V RG=1.8 Tvj=25 | 23.2 | mJ | |||
| IC=450 A VCE=600 V VGE= 15V RG=1.8 Tvj=125 | 31.5 | mJ | |||||
| IC=450 A VCE=600 V VGE= 15V RG=1.8 Tvj=150 | 34.6 | mJ | |||||
| Energy Dissipation During Turn-off Time | Eoff | IC=450 A VCE=600 V VGE= 15V RG=1.8 Tvj=25 | 28.5 | mJ | |||
| IC=450 A VCE=600 V VGE= 15V RG=1.8 Tvj=125 | 44.3 | mJ | |||||
| IC=450 A VCE=600 V VGE= 15V RG=1.8 Tvj=150 | 48.1 | mJ | |||||
| SC Data | Isc | Tp10us, VGE=15V, Tvj=150, Vcc=900V, VCEM1200V | 2250 | A | |||
| Diode Absolute Maximum Ratings | |||||||
| Repetitive Peak Reverse Voltage | VRRM | Tvj=25 | 1200 | V | |||
| Continuous DC Forward Current | IF | 450 | A | ||||
| Repetitive Peak Forward Current | IFRM | tp=1ms | 900 | A | |||
| I2t-value | I2t | VR=0,tp=10ms,Tj=125 | 32000 | A2s | |||
| VR=0,tp=10ms,Tj=150 | 30000 | A2s | |||||
| Diode Characteristic Values | |||||||
| Forward Voltage | VF | IF=450A,Tvj=25 | V | 2.10 | |||
| IF=450A,Tvj=125 | V | 2.15 | |||||
| IF=450A,Tvj=150 | V | 2.17 | |||||
| Recovered Charge | Qrr | IF=450 A VR=600V -diF/dt=6500A/us Tvj=25 | 45 | uC | |||
| IF=450 A VR=600V -diF/dt=6500A/us Tvj=125 | 86 | uC | |||||
| IF=450 A VR=600V -diF/dt=6500A/us Tvj=150 | 91 | uC | |||||
| Peak Reverse Recovery Current | Irr | IF=450 A VR=600V -diF/dt=6500A/us Tvj=25 | 383 | A | |||
| IF=450 A VR=600V -diF/dt=6500A/us Tvj=125 | 453 | A | |||||
| IF=450 A VR=600V -diF/dt=6500A/us Tvj=150 | 461 | A | |||||
| Reverse Recovery Energy | Erec | IF=450 A VR=600V -diF/dt=6500A/us Tvj=25 | 21.2 | mJ | |||
| IF=450 A VR=600V -diF/dt=6500A/us Tvj=125 | 37.2 | mJ | |||||
| IF=450 A VR=600V -diF/dt=6500A/us Tvj=150 | 41.5 | mJ | |||||
| Module Characteristics | |||||||
| Isolation voltage | Visol | t=1min,f=50Hz | 2500 | V | |||
| Maximum Junction Temperature | Tjmax | 175 | |||||
| Operating Junction Temperature | Tvj op | -40 | 150 | ||||
| Storage Temperature | Tstg | -40 | 125 | ||||
| Thermal Resistance Junction-to Case | RJC | per IGBT | 0.065 | K/W | |||
| Thermal Resistance Junction-to Case | RJC | per Diode | 0.13 | K/W | |||
| Comparative Tracking Index | CTI | >400 | |||||
| Thermal Resistance Case-to Sink | RCS | Conductive grease applied | 0.033 | K/W | |||
| Module Electrodes Torque | Mt | Recommended(M6) | Nm | 3.0 | 5.0 | ||
| Module-to-Sink Torque | Ms | Recommended(M6) | Nm | 3.0 | 5.0 | ||
| Weight of Module | G | 315 | g | ||||
2411220012_YANGJIE-MG450HF12TLC2_C20602007.pdf
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