Glass passivated chip diode YONGYUTAI MB8S offering performance in power supply and rectification circuits
Product Overview
This series of glass passivated chip junction diodes offers a wide range of reverse voltage capabilities from 100V to 1000V, with a forward current of 0.8A and high surge current capability. Designed for surface mount applications, these diodes are suitable for various power supply and rectification circuits.
Product Attributes
- Brand: (Not specified)
- Origin: (Not specified)
- Material: Glass Passivated Chip
- Color: (Not specified)
- Certifications: MIL-STD-750 (Terminals solderable)
Technical Specifications
| Model | Maximum Repetitive Peak Reverse Voltage (VRRM) | Maximum RMS Voltage (VRMS) | Maximum DC Blocking Voltage (VDC) | Maximum Forward Current (IO) | Peak Forward Surge Current (IFSM) | Maximum Forward Voltage (VF) @ 1.0A | Maximum DC Reverse Current (IR) @ Rated DC Blocking Voltage | Typical Junction Capacitance (Cj) | Operating & Storage Temperature (Tj, Tstg) | Typical Thermal Resistance (RJA) |
| MB1S | 100 V | 70 V | 100 V | 0.8 A | 35 A | 1.1 V | 5 A (@Tj=25C), 40 A (@Tj=125C) | (See Fig.4) | -55 ~ +150 C | (See Note 2) |
| MB2S | 200 V | 140 V | 200 V | 0.8 A | 35 A | 1.1 V | 5 A (@Tj=25C), 40 A (@Tj=125C) | (See Fig.4) | -55 ~ +150 C | (See Note 2) |
| MB4S | 400 V | 280 V | 400 V | 0.8 A | 35 A | 1.1 V | 5 A (@Tj=25C), 40 A (@Tj=125C) | (See Fig.4) | -55 ~ +150 C | (See Note 2) |
| MB6S | 600 V | 420 V | 600 V | 0.8 A | 35 A | 1.1 V | 5 A (@Tj=25C), 40 A (@Tj=125C) | (See Fig.4) | -55 ~ +150 C | (See Note 2) |
| MB8S | 800 V | 560 V | 800 V | 0.8 A | 35 A | 1.1 V | 5 A (@Tj=25C), 40 A (@Tj=125C) | (See Fig.4) | -55 ~ +150 C | (See Note 2) |
| MB10S | 1000 V | 700 V | 1000 V | 0.8 A | 35 A | 1.1 V | 5 A (@Tj=25C), 40 A (@Tj=125C) | (See Fig.4) | -55 ~ +150 C | (See Note 2) |
2410121502_YONGYUTAI-MB8S_C2904831.pdf
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