IGBT module YANGJIE MG200HF12MIC2 offering short circuit rating and fast soft reverse recovery diodes
Key Attributes
Model Number:
MG200HF12MIC2
Product Custom Attributes
Pd - Power Dissipation:
1.36kW
Td(off):
282ns
Td(on):
135ns
Collector-Emitter Breakdown Voltage (Vces):
1.2kV
Reverse Transfer Capacitance (Cres):
0.62nF
Input Capacitance(Cies):
12.6nF
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
5V@4mA
Reverse Recovery Time(trr):
175ns
Switching Energy(Eoff):
12.5mJ
Turn-On Energy (Eon):
8.5mJ
Mfr. Part #:
MG200HF12MIC2
Package:
Screw Terminals
Product Description
Product Overview
The MG200HF12MIC2 S-M304 is a high-performance IGBT module designed for demanding applications. It features short circuit rating, low stray inductance, and low switching losses, with a VCE(sat) exhibiting a positive temperature coefficient. This module offers fast switching and a short tail current, complemented by fast and soft reverse recovery free-wheeling diodes. It is suitable for applications such as welding machines and power supplies.
Product Attributes
- Brand: Yangjie
- Model: MG200HF12MIC2 S-M304
- Certifications: RoHS Compliant
- Revision: 1.0
- Date: 1-July-19
Technical Specifications
| Parameter | Description | Values | Units |
| Absolute Maximum Ratings | Collector - Emitter Voltage (VCES) | 1200 | V |
| Gate-Emitter Voltage (VGES) | 20 | V | |
| DC Collector Current (IC) at TC=25 | 300 | A | |
| DC Collector Current (IC) at TC=80 | 200 | A | |
| Repetitive Peak Collector Current (ICM) at TC=25C, tp=1ms | 400 | A | |
| Power Dissipation Per IGBT (Ptot) | 1360 | W | |
| Temperature Range | Junction Temperature (TJ) | -40 to +150 | C |
| Storage Temperature (TSTG) | -40 to +125 | C | |
| Insulation Test Voltage (Viso) AC, t=1min | 3000 | V | |
| Electrical Characteristics (IGBT) | Collector-Emitter Breakdown Voltage (V(BR)CES) | 1200 | V |
| Collector Leakage Current (ICES) at VCE=1200V,VGE=0V, TJ=25C | 0.5 | mA | |
| Gate Leakage Current (IGES) | -200 to 200 | nA | |
| ON Characteristics (IGBT) | Gate - Emitter Threshold Voltage (VGE(th)) | 5.8 | V |
| Collector Emitter Saturation Voltage (VCE(sat)) at IC=200A, VGE=15V, TJ=25C | 1.8 to 2.0 | V | |
| Dynamic Characteristics (IGBT) | Input Capacitance (Cies) | 12.6 | nF |
| Reverse Transfer Capacitance (Cres) | 0.62 | nF | |
| Switching Characteristics (IGBT) | Turn-on Delay Time (td(on)) at TJ=25C | 135 | ns |
| Rise Time (tr) at TJ=25C | 38 | ns | |
| Turn-off Delay Time (td(off)) at TJ=25C | 282 | ns | |
| Fall Time (Tf) at TJ=25C | 165 | ns | |
| Switching Loss (IGBT) | Turn-on Switching Loss (Eon) at TJ=25C | 8.5 | mJ |
| Turn-off Switching Loss (Eoff) at TJ=25C | 12.5 | mJ | |
| Gate Charge (IGBT) | Gate Charge (Qge) | 420 | nC |
| Short Circuit Safe Operating Area (IGBT) | SCSOA at VCC=600V, VGE15V, TJ=125 | 1100 | A (10 s) |
| Electrical Characteristics (FWD) | Forward Voltage (VFM) at IF=200A, TJ=25C | 1.79 to 2.0 | V |
| Reverse Recovery Time (trr) at TJ=25C | 175 | ns | |
| Peak Reverse Recovery Current (Irr) at TJ=25C | 140 | A | |
| Thermal Resistance Characteristics | Junction-To-Case (IGBT Part, Per Leg) (RJC) | 0.08 | /W |
| Junction-To-Case (Diode Part, Per Leg) (RJC) | 0.25 | /W | |
| Case-To-Sink (RCS) | 0.1 | /W | |
| Mounting Torque (Power Terminals Screw: M6) | 515% | N*m | |
| Mounting Torque (Mounting Screw: M6) | 515% | N*m | |
| Weight | Weight Of Module | 300 | g |
2410121308_YANGJIE-MG200HF12MIC2_C781190.pdf
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