IGBT power module YANGJIE MG10P12P3 optimized for motor drivers AC DC servo drives and UPS systems
Key Attributes
Model Number:
MG10P12P3
Product Custom Attributes
Mfr. Part #:
MG10P12P3
Product Description
Product Overview
The MG10P12P3 S-M452 is a high-performance IGBT module designed for demanding applications such as motor drivers, AC/DC servo drive amplifiers, and Uninterruptible Power Supplies (UPS). It features low switching losses, low VCE(sat), a positive temperature coefficient, and an integrated fast & soft recovery anti-parallel FWD. The module boasts a low inductance case, high short circuit capability (10us), and an isolated heatsink using DBC technology, with a maximum junction temperature of 175.
Product Attributes
- Brand: Yangjie
- Model: MG10P12P3 S-M452
- Certifications: RoHS Compliant
- Date: 8-Mar-23 (Rev. 1.1)
Technical Specifications
| Parameter | Symbol | Conditions | Value | Unit |
| IGBT - Inverter Absolute Maximum Ratings | ||||
| Collector-Emitter Voltage | VCES | VGE=0V, IC =1mA, Tvj=25 | 1200 | V |
| Continuous Collector Current | IC | TC=100,Tvjmax=175 | 10 | A |
| Repetitive Peak Collector Current | ICRM | tp=1ms | 20 | A |
| Gate-Emitter Voltage | VGES | Tvj=25 | 20 | V |
| Total Power Dissipation | Ptot | TC=25, Tvjmax=175 | 140 | W |
| IGBT - Inverter Characteristic Values | ||||
| Gate-emitter Threshold Voltage | VGE(th) | VGE=VCE,IC =0.5mA,Tvj=25 | 5.2 - 6.4 | V |
| Collector-Emitter Cut-off Current | ICES | VCE=1200V,VGE=0V, Tvj=25 | 1.0 | mA |
| Collector-Emitter Saturation Voltage | VCE(sat) | IC=10A,VGE=15V, Tvj=25 | 1.85 - 2.20 | V |
| Collector-Emitter Saturation Voltage | VCE(sat) | IC=10A,VGE=15V, Tvj=125 | 2.15 | V |
| Collector-Emitter Saturation Voltage | VCE(sat) | IC=10A,VGE=15V, Tvj=150 | 2.25 | V |
| Gate Charge | QG | 0.13 | uC | |
| Input Capacitance | Cies | VCE=25V, VGE=0V, f=1MHz, Tvj=25 | 1.0 | nF |
| Reverse Transfer Capacitance | Cres | 0.03 | nF | |
| Gate-Emitter leakage current | IGES | VCE=0V, VGE=20V, Tvj =25 | 400 | nA |
| IGBT - Inverter Switching Characteristics (Tvj=25) | ||||
| Turn-on Delay Time | td(on) | IC=10A, VCE=600V, VGE=15V, RG=51 | 87 | ns |
| Rise Time | tr | IC=10A, VCE=600V, VGE=15V, RG=51 | 55 | ns |
| Turn-off Delay Time | td(off) | IC=10A, VCE=600V, VGE=15V, RG=51 | 262 | ns |
| Fall Time | tf | IC=10A, VCE=600V, VGE=15V, RG=51 | 145 | ns |
| Energy Dissipation During Turn-on Time | Eon | IC=10A, VCE=600V, VGE=15V, RG=51 | 1.02 | mJ |
| Energy Dissipation During Turn-off Time | Eoff | IC=10A, VCE=600V, VGE=15V, RG=51 | 0.52 | mJ |
| IGBT - Inverter Switching Characteristics (Tvj=125) | ||||
| Turn-on Delay Time | td(on) | IC=10A, VCE=600V, VGE=15V, RG=51 | 92 | ns |
| Rise Time | tr | IC=10A, VCE=600V, VGE=15V, RG=51 | 58 | ns |
| Turn-off Delay Time | td(off) | IC=10A, VCE=600V, VGE=15V, RG=51 | 283 | ns |
| Fall Time | tf | IC=10A, VCE=600V, VGE=15V, RG=51 | 153 | ns |
| Energy Dissipation During Turn-on Time | Eon | IC=10A, VCE=600V, VGE=15V, RG=51 | 1.38 | mJ |
| Energy Dissipation During Turn-off Time | Eoff | IC=10A, VCE=600V, VGE=15V, RG=51 | 0.96 | mJ |
| IGBT - Inverter Switching Characteristics (Tvj=150) | ||||
| Turn-on Delay Time | td(on) | IC=10A, VCE=600V, VGE=15V, RG=51 | 98 | ns |
| Rise Time | tr | IC=10A, VCE=600V, VGE=15V, RG=51 | 61 | ns |
| Turn-off Delay Time | td(off) | IC=10A, VCE=600V, VGE=15V, RG=51 | 285 | ns |
| Fall Time | tf | IC=10A, VCE=600V, VGE=15V, RG=51 | 155 | ns |
| Energy Dissipation During Turn-on Time | Eon | IC=10A, VCE=600V, VGE=15V, RG=51 | 1.41 | mJ |
| Energy Dissipation During Turn-off Time | Eoff | IC=10A, VCE=600V, VGE=15V, RG=51 | 1.02 | mJ |
| SC Data | ISC | tp10us,VGE=15V,Tvj=150, VCC=900V,VCEM1200V | 70 | A |
| Diode - Inverter Absolute Maximum Ratings | ||||
| Repetitive Peak Reverse Voltage | VRRM | Tvj=25 | 1200 | V |
| Continuous DC Forward Current | IF | 10 | A | |
| Repetitive Peak Forward Current | IFRM | tp=1ms | 20 | A |
| I2t-value | I2t | VR=0V,tp=10ms,Tvj=125 | 16.0 | A2s |
| I2t-value | I2t | VR=0V,tp=10ms,Tvj=150 | 14.0 | A2s |
| Diode - Inverter Characteristic Values | ||||
| Forward Voltage | VF | IF=10A,Tvj=25 | 2.0 | V |
| Forward Voltage | VF | IF=10A,Tvj=125 | 2.1 | V |
| Forward Voltage | VF | IF=10A,Tvj=150 | 2.15 | V |
| Recovered Charge | Qrr | IF =10A, VR=600V, -diF/dt =600A/us, Tvj=25 | 1.0 | uC |
| Peak Reverse Recovery Current | Irr | IF =10A, VR=600V, -diF/dt =600A/us, Tvj=25 | 12.5 | A |
| Reverse Recovery Energy | Erec | IF =10A, VR=600V, -diF/dt =600A/us, Tvj=25 | 0.26 | mJ |
| Recovered Charge | Qrr | IF =10A, VR=600V, -diF/dt =600A/us, Tvj=125 | 1.70 | uC |
| Peak Reverse Recovery Current | Irr | IF =10A, VR=600V, -diF/dt =600A/us, Tvj=125 | 10.6 | A |
| Reverse Recovery Energy | Erec | IF =10A, VR=600V, -diF/dt =600A/us, Tvj=125 | 0.53 | mJ |
| Recovered Charge | Qrr | IF =10A, VR=600V, -diF/dt =600A/us, Tvj=150 | 1.86 | uC |
| Peak Reverse Recovery Current | Irr | IF =10A, VR=600V, -diF/dt =600A/us, Tvj=150 | 12.0 | A |
| Reverse Recovery Energy | Erec | IF =10A, VR=600V, -diF/dt =600A/us, Tvj=150 | 0.61 | mJ |
| IGBT - Brake-Chopper Absolute Maximum Ratings | ||||
| Collector-Emitter Voltage | VCES | VGE=0V, IC =1mA, Tvj=25 | 1200 | V |
| Continuous Collector Current | IC | TC=100,Tvjmax=175 | 10 | A |
| Repetitive Peak Collector Current | ICRM | tp=1ms | 20 | A |
| Gate-Emitter Voltage | VGES | Tvj=25 | 20 | V |
| Total Power Dissipation | Ptot | TC=25, Tvjmax=175 | 140 | W |
| IGBT - Brake-Chopper Characteristic Values | ||||
| Gate-emitter Threshold Voltage | VGE(th) | VGE=VCE, IC =0.5mA,Tvj=25 | 5.2 - 6.4 | V |
| Collector-Emitter Cut-off Current | ICES | VCE=1200V,VGE=0V, Tvj=25 | 1.0 | mA |
| Collector-Emitter Saturation Voltage | VCE(sat) | IC=10A,VGE=15V, Tvj=25 | 1.85 - 2.25 | V |
| Collector-Emitter Saturation Voltage | VCE(sat) | IC=10A,VGE=15V, Tvj=125 | 2.15 | V |
| Collector-Emitter Saturation Voltage | VCE(sat) | IC=10A,VGE=15V, Tvj=150 | 2.25 | V |
| Gate Charge | QG | 0.09 | uC | |
| Input Capacitance | Cies | VCE=25V, VGE=0V, f=1MHz, Tvj=25 | 1.0 | nF |
| Reverse Transfer Capacitance | Cres | 0.03 | nF | |
| Gate-Emitter leakage current | IGES | VCE=0V, VGE=20V,Tvj = 25 | 400 | nA |
| IGBT - Brake-Chopper Switching Characteristics (Tvj=25) | ||||
| Turn-on Delay Time | td(on) | IC=10A, VCE=600V, VGE=15V, RG=51 | 46 | ns |
| Rise Time | tr | IC=10A, VCE=600V, VGE=15V, RG=51 | 45 | ns |
| Turn-off Delay Time | td(off) | IC=10A, VCE=600V, VGE=15V, RG=51 | 182 | ns |
| Fall Time | tf | IC=10A, VCE=600V, VGE=15V, RG=51 | 168 | ns |
| Energy Dissipation During Turn-on Time | Eon | IC=10A, VCE=600V, VGE=15V, RG=51 | 0.92 | mJ |
| Energy Dissipation During Turn-off Time | Eoff | IC=10A, VCE=600V, VGE=15V, RG=51 | 0.56 | mJ |
| IGBT - Brake-Chopper Switching Characteristics (Tvj=125) | ||||
| Turn-on Delay Time | td(on) | IC=10A, VCE=600V, VGE=15V, RG=51 | 46 | ns |
| Rise Time | tr | IC=10A, VCE=600V, VGE=15V, RG=51 | 63 | ns |
| Turn-off Delay Time | td(off) | IC=10A, VCE=600V, VGE=15V, RG=51 | 248 | ns |
| Fall Time | tf | IC=10A, VCE=600V, VGE=15V, RG=51 | 220 | ns |
| Energy Dissipation During Turn-on Time | Eon | IC=10A, VCE=600V, VGE=15V, RG=51 | 1.37 | mJ |
| Energy Dissipation During Turn-off Time | Eoff | IC=10A, VCE=600V, VGE=15V, RG=51 | 0.81 | mJ |
| IGBT - Brake-Chopper Switching Characteristics (Tvj=150) | ||||
| Turn-on Delay Time | td(on) | IC=10A, VCE=600V, VGE=15V, RG=51 | 48 | ns |
| Rise Time | tr | IC=10A, VCE=600V, VGE=15V, RG=51 | 68 | ns |
| Turn-off Delay Time | td(off) | IC=10A, VCE=600V, VGE=15V, RG=51 | 252 | ns |
| Fall Time | tf | IC=10A, VCE=600V, VGE=15V, RG=51 | 223 | ns |
| Energy Dissipation During Turn-on Time | Eon | IC=10A, VCE=600V, VGE=15V, RG=51 | 1.60 | mJ |
| Energy Dissipation During Turn-off Time | Eoff | IC=10A, VCE=600V, VGE=15V, RG=51 | 0.89 | mJ |
| SC Data | ISC | tp10us,VGE=15V,Tvj=150, VCC=900V,VCEM1200V | 70 | A |
| Diode - Brake-Chopper Absolute Maximum Ratings | ||||
| Repetitive Peak Reverse Voltage | VRRM | Tvj=25 | 1200 | V |
| Continuous DC Forward Current | IF | 10 | A | |
| Repetitive Peak Forward Current | IFRM | tp=1ms | 20 | A |
| I2t-value | I2t | VR=0V,tp=10ms,Tvj=125 | 16.0 | A2s |
| I2t-value | I2t | VR=0V,tp=10ms,Tvj=150 | 14.0 | A2s |
| Diode - Brake-Chopper Characteristic Values | ||||
| Forward Voltage | VF | IF=10A,Tvj=25 | 2.0 - 2.5 | V |
| Forward Voltage | VF | IF=10A,Tvj=125 | 2.1 | V |
| Forward Voltage | VF | IF=10A,Tvj=150 | 2.15 | V |
| Recovered Charge | Qrr | IF =10A, VR=600V, -diF/dt =500A/us, Tvj=25 | 0.88 | uC |
| Peak Reverse Recovery Current | Irr | IF =10A, VR=600V, -diF/dt =500A/us, Tvj=25 | 12.5 | A |
| Reverse Recovery Energy | Erec | IF =10A, VR=600V, -diF/dt =500A/us, Tvj=25 | 0.25 | mJ |
| Recovered Charge | Qrr | IF =10A, VR=600V, -diF/dt =500A/us, Tvj=125 | 1.71 | uC |
| Peak Reverse Recovery Current | Irr | IF =10A, VR=600V, -diF/dt =500A/us, Tvj=125 | 10.4 | A |
| Reverse Recovery Energy | Erec | IF =10A, VR=600V, -diF/dt =500A/us, Tvj=125 | 0.50 | mJ |
| Recovered Charge | Qrr | IF =10A, VR=600V, -diF/dt =500A/us, Tvj=150 | 1.92 | uC |
| Peak Reverse Recovery Current | Irr | IF =10A, VR=600V, -diF/dt =500A/us, Tvj=150 | 10.4 | A |
| Reverse Recovery Energy | Erec | IF =10A, VR=600V, -diF/dt =500A/us, Tvj=150 | 0.58 | mJ |
| Diode - Rectifier Absolute Maximum Ratings | ||||
| Repetitive Peak Reverse Voltage | VRRM | Tvj=25 | 1600 | V |
| Average output Current | IF(AV) | 50/60Hz, sine wave, TC=100 | 10 | A |
| Maximum RMS Current at Rectifier Output | IRMSM | TC=100 | 20 | A |
| Surge Forward Current | IFSM | VR=0V,tp=10ms,Tvj=45 | 150 | A |
| I2t-value | I2t | VR=0V,tp=10ms,Tvj=45 | 110 | A2s |
| Diode - Rectifier Characteristic Values | ||||
| Diode Forward Voltage | VF | IF=10A,Tvj=150 | 1.0 | V |
| Reverse Current | IR | Tvj=150,VR=1600V | 1.0 | mA |
| NTC-Thermistor Characteristic Values | ||||
| Rated Resistance | R25 | 5.0 | k | |
| Deviation of R100 | R/R | TC=100,R100=493.3 | -5 - 5 | % |
| Power Dissipation | P25 | 20.0 | mW | |
| B-value | B25/50 | R2=R25exp[B25/50(1/T2-1/(298.15K ))] | 3375 | K |
| Module Characteristics | ||||
| Isolation voltage | Visol | t=1min,f=50Hz, TC=25 C | 2500 | V |
| Maximum Junction Temperature | Tjmax | 175 | ||
| Operating Junction Temperature | Tvj op | -40 - 150 | ||
| Storage Temperature | Tstg | -40 - 125 | ||
| Stray-inductance-module | LSCE | 30 | nH | |
| Comparative Tracking Index | CTI | >200 | ||
| Module lead resistance, terminals-chip | RCC+EE | TC=25, per switch | 5.00 | m |
| Module lead resistance, terminals-chip | RAA+CC | TC=25, per switch | 6.00 | m |
| Thermal Resistance Junction-to Case | RJC | per IGBT-inverter | 1.25 - 1.40 | K/W |
| Thermal Resistance Junction-to Case | RJC | per Diode-inverter | 1.75 - 1.90 | K/W |
| Thermal Resistance Junction-to Case | RJC | per IGBT-brake-chopper | 1.25 - 1.40 | K/W |
| Thermal Resistance Junction-to Case | RJC | per Diode-chopper | 1.75 - 1.90 | K/W |
| Thermal Resistance Junction-to Case | RJC | per Diode-rectifier | 2.05 - 2.10 | K/W |
| Thermal Resistance Case-to Sink | RCS | per IGBT-inverter | 1.15 | K/W |
| Thermal Resistance Case-to Sink | RCS | per Diode-inverter | 1.30 | K/W |
| Thermal Resistance Case-to Sink | RCS | per IGBT-brake-chopper | 1.15 | K/W |
| Thermal Resistance Case-to Sink | RCS | per Diode-chopper | 1.30 | K/W |
| Thermal Resistance Case-to Sink | RCS | per Diode-rectifier | 1.25 | K/W |
| Thermal Resistance Case-to Sink | RCS | per Module | 0.05 | K/W |
| Mounting Force Per Clamp | F | 30 - 80 | N | |
| Weight of Module | G | 45 | g | |
2411220012_YANGJIE-MG10P12P3_C20601997.pdf
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