N channel Power MOSFET XTX BRT40N210P2 with 840A Pulsed Drain Current and Enhanced Trench Technology
Key Attributes
Model Number:
BRT40N210P2
Product Custom Attributes
Mfr. Part #:
BRT40N210P2
Package:
PDFN-8L(5x6)
Product Description
Product Overview
The BRT40N210P2 is an N-channel Enhancement Mode Power MOSFET from XTX Technology Inc. It features advanced trench technology, offering excellent RDS(ON) and low gate charge. This MOSFET is suitable for load switch, PWM applications, and power management scenarios.
Product Attributes
- Brand: XTX Technology Inc.
- Product Number: BRT40N210P2
- Package: PDFN5*6-8L
- Marking: T40N210
- Quantity: 5000pcs/Reel
- Origin: China (implied by company contact details)
Technical Specifications
| Symbol | Parameter | Condition | Min | Typ | Max | Unit |
| VDS | Drain-to-Source Voltage | - | - | 40 | V | |
| VGS | Gate-to-Source Voltage | - | - | ±20 | V | |
| ID | Continuous Drain Current | TC = 25°C | - | - | 210 | A |
| ID | Continuous Drain Current | TC = 100°C | - | - | 137 | A |
| IDM | Pulsed Drain Current (1) | - | - | 840 | A | |
| EAS | Single Pulsed Avalanche Energy (2) | - | - | 420 | mJ | |
| PD | Power Dissipation, TC = 25°C | - | - | 120 | W | |
| RθJC | Thermal Resistance, Junction to Case | - | 1.0 | - | °C/W | |
| TJ, TSTG | Junction & Storage Temperature Range | -55 | - | +150 | °C | |
| V(BR)DSS | Drain-Source Breakdown Voltage | ID = 250µA, VGS = 0V | 40 | - | - | V |
| IDSS | Zero Gate Voltage Drain Current | VDS = 40V, VGS = 0V | - | - | 1 | µA |
| IGSS | Gate-Body Leakage Current | VDS = 0V, VGS = ±20V | - | - | ±100 | nA |
| VGS(TH) | Gate Threshold Voltage | VDS = VGS, ID = 250uA | 1.0 | 1.7 | 2.5 | V |
| RDS(ON) | Static Drain-Source ON-Resistance(3) | VGS = 10V, ID = 30A | - | 1.35 | 1.6 | mΩ |
| RDS(ON) | Static Drain-Source ON-Resistance(3) | VGS = 4.5V, ID = 20A | - | 1.7 | 3.0 | mΩ |
| Ciss | Input Capacitance | VGS = 0V, VDS = 20V, f = 1MHz | - | 11.39 | - | nF |
| Coss | Output Capacitance | - | 770 | - | pF | |
| Crss | Reverse Transfer Capacitance | - | 621 | - | pF | |
| Qg | Total Gate Charge | VGS = 0 to 10V, VDS = 20V, ID = 30A | - | 95 | - | nC |
| Qgs | Gate Source Charge | - | 15 | - | nC | |
| Qgd | Gate Drain("Miller") Charge | - | 19 | - | nC | |
| td(on) | Turn-On Delay Time | VGS = 10V, VDD = 20V, ID= 30A, RG = 3Ω | - | 10 | - | ns |
| tr | Turn-On Rise Time | - | 28 | - | ns | |
| td(off) | Turn-Off Delay Time | - | 38 | - | ns | |
| tf | Turn-Off Fall Time | - | 9 | - | ns | |
| IS | Continuous Source Current | - | - | 210 | A | |
| VSD | Forward on voltage | VGS = 0V, IS = 30A | - | - | 1.2 | V |
| Trr | Reverse Recovery Time | IF = 30A, di/dt = 100A/us | - | - | 35 | ns |
| Qrr | Reverse Recovery Charge | - | - | 24.2 | nC |
2509261615_XTX-BRT40N210P2_C51966743.pdf
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