400 watt LDMOS FET power amplifier Wolfspeed PXAE213708NB-V1-R2 for 2110 to 2180 MHz cellular applications
Key Attributes
Model Number:
PXAE213708NB-V1-R2
Product Custom Attributes
Mfr. Part #:
PXAE213708NB-V1-R2
Package:
PG-HB2SOF-8-1
Product Description
Product Overview
The Wolfspeed PXAE213708NB is a 400-watt LDMOS FET designed for multi-standard cellular power amplifier applications within the 2110 to 2180 MHz frequency band. This device features broadband internal input and output matching, an asymmetrical Doherty design with distinct main and peak power capabilities, and integrated ESD protection. Manufactured using Wolfspeed's advanced LDMOS process, it offers a thermally-enhanced package with an earless flange, providing excellent thermal performance and superior reliability. The PXAE213708NB is Pb-free and RoHS compliant.
Product Attributes
- Brand: Wolfspeed
- Certifications: Pb-free, RoHS compliant
- Package Type: PG-HB2SOF-8-1
Technical Specifications
| Characteristic | Symbol | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| General Features | ||||||
| Output Power at P3dB (Doherty) | 2180 MHz, 28 V, 10 s pulse, 10% duty | 400 | W | |||
| Power Added Efficiency at P3dB (Doherty) | 2180 MHz, 28 V, 10 s pulse, 10% duty | 60.3 | % | |||
| Power Gain (Doherty) | 2180 MHz, 28 V, 10 s pulse, 10% duty | 13.7 | dB | |||
| Target RF Characteristics (Single-carrier WCDMA) | ||||||
| Gain (Gps) | Gps | VDD = 29 V, IDQ = 750 mA, VGSPEAK = 1.5 V, POUT = 54 W avg, = 2180 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, peak/average = 10 dB @ 0.01% CCDF | 16 | dB | ||
| Drain Efficiency (hD) | hD | VDD = 29 V, IDQ = 750 mA, VGSPEAK = 1.5 V, POUT = 54 W avg, = 2180 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, peak/average = 10 dB @ 0.01% CCDF | 51 | % | ||
| Adjacent Channel Power Ratio (ACPR) | ACPR | VDD = 29 V, IDQ = 750 mA, VGSPEAK = 1.5 V, POUT = 54 W avg, = 2180 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, peak/average = 10 dB @ 0.01% CCDF | -27 | dBc | ||
| Output PAR at 0.01% probability on CCDF (OPAR) | OPAR | VDD = 29 V, IDQ = 750 mA, VGSPEAK = 1.5 V, POUT = 54 W avg, = 2180 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, peak/average = 10 dB @ 0.01% CCDF | 8.7 | dB | ||
| DC Characteristics (each side) | ||||||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS = 0 V, IDS = 10 mA | 65 | V | ||
| Drain Leakage Current | IDSS | VDS = 28 V, VGS = 0 V | 1 | A | ||
| Drain Leakage Current | IDSS | VDS = 63 V, VGS = 0 V | 10 | A | ||
| Gate Leakage Current | IGSS | VGS = 10 V, VDS = 0 V | 1 | A | ||
| On-State Resistance (main) | RDS(on) | VGS = 10 V, VDS = 0.1 V | TBD | W | ||
| On-State Resistance (peak) | RDS(on) | VGS = 10 V, VDS = 0.1 V | TBD | W | ||
| Operating Gate Voltage (main) | VGS | VDS = 28 V, IDQ = 750 mA | 2.9 | V | ||
| Operating Gate Voltage (peak) | VGS | VDS = 28 V, IDQ = 0 mA | 1.5 | V | ||
| Maximum Ratings | ||||||
| Drain-Source Voltage | VDSS | 65 | V | |||
| Gate-Source Voltage | VGS | -6 | +10 | V | ||
| Operating Voltage | VDD | 0 | +32 | V | ||
| Junction Temperature | TJ | 225 | C | |||
| Storage Temperature Range | TSTG | -65 | +150 | C | ||
| Thermal Characteristics | ||||||
| Thermal Resistance | RqJC | TBD | C/W | |||
| Ordering Information | ||||||
| Type and Version | Order Code | Package Description | Shipping | |||
| PXAE213708NB V1 R2 | PG-HB2SOF-8-1 | Tape & Reel, 250 pcs | ||||
2411041707_Wolfspeed-PXAE213708NB-V1-R2_C20544676.pdf
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