High Voltage IGBT Module YANGJIE DGW10N120CTL Featuring Fast Recovery Diode for AC DC Servo Drive Amplifiers
Key Attributes
Model Number:
DGW10N120CTL
Product Custom Attributes
Pd - Power Dissipation:
157W
Td(off):
262ns
Td(on):
85ns
Operating Temperature:
-40℃~+175℃
Collector-Emitter Breakdown Voltage (Vces):
1.2kV
Reverse Transfer Capacitance (Cres):
0.035nF
IGBT Type:
FS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
5V@500uA
Gate Charge(Qg):
0.08uC@15V
Pulsed Current- Forward(Ifm):
40A
Switching Energy(Eoff):
480uJ
Turn-On Energy (Eon):
980uJ
Mfr. Part #:
DGW10N120CTL
Package:
TO-247
Product Description
Product Overview
The DGW10N120CTL S-M352D is a high-performance IGBT module featuring Low VCE(sat) Trench-FS IGBT technology, a maximum junction temperature of 175, and a positive temperature coefficient. It includes a fast and soft recovery anti-parallel FWD and boasts high short circuit capability (10us). This product is ideal for inverter applications in motor drives, AC and DC servo drive amplifiers, and uninterruptible power supplies.
Product Attributes
- Certifications: RoHS Compliant
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Maximum Ratings | ||||||
| Collector-Emitter Breakdown Voltage | VCE | 1200 | V DC | |||
| Collector Current, limited by Tjmax | IC | TC= 25C | 20 | A | ||
| Collector Current, limited by Tjmax | IC | TC= 100C | 10 | A | ||
| Diode Forward Current, limited by Tjmax | IF | TC= 25C | 20 | A | ||
| Diode Forward Current, limited by Tjmax | IF | TC= 100C | 10 | A | ||
| Continuous Gate-Emitter Voltage | VGE | 20 | V | |||
| Transient Gate-Emitter Voltage | VGE | 30 | V | |||
| Turn off Safe Operating Area | VCE1200V, Tj 150C | 40 | A | |||
| Pulsed Collector Current, VGE=15V, tp limited by Tjmax | ICM | 40 | A | |||
| Diode Pulsed Current, tp limited by Tjmax | IFpuls | 40 | A | |||
| Short Circuit Withstand Time, VGE= 15V, VCC=900VVCEM1200V | Tsc | 10 | s | |||
| Power Dissipation , Tj=175C,Tc=25C | Ptot | 157 | W | |||
| Electrical Characteristics of the IGBTTj= 25unless otherwise specified | ||||||
| Static Collector-Emitter Breakdown Voltage | BVCES | VGE=0V, IC=250A | 1200 | - | - | V |
| Gate Threshold Voltage | VGE(th) | VGE=VCE, IC=500A | 5.0 | 5.8 | 6.6 | V |
| Collector-Emitter Saturation Voltage | VCE(sat) | VGE=15V, IC=10A | V | |||
| Collector-Emitter Saturation Voltage | VCE(sat) | Tj=25C | 1.85 | V | ||
| Collector-Emitter Saturation Voltage | VCE(sat) | Tj=125C | 2.15 | V | ||
| Collector-Emitter Saturation Voltage | VCE(sat) | Tj=150C | 2.25 | 2.20 | V | |
| Zero Gate Voltage Collector Current | ICES | VCE=1200V, VGE=0V | mA | |||
| Zero Gate Voltage Collector Current | ICES | Tj= 25C | 0.25 | mA | ||
| Zero Gate Voltage Collector Current | ICES | Tj=150C | 5.00 | mA | ||
| Gate-Emitter Leakage Current | IGES | VCE= 0V, VGE= 20V | 400 | nA | ||
| Input Capacitance | Cies | VCE= 25V, VGE= 0V, f = 1MHz | 0.75 | nF | ||
| Reverse Transfer Capacitance | Cres | 0.035 | nF | |||
| Gate Charge | QG | VCC=960V,IC=10A, VGE=15V | 0.08 | uC | ||
| Short Circuit Collector Current | ISC | VGE=15V, tsc10us, Vcc=900V,Tj150C | 50 | A | ||
| Operating Junction Temperature | Tj | -40 | +175 | C | ||
| Storage Temperature | Ts | -55 | +150 | C | ||
| Soldering Temperature, wave soldering 1.6mm (0.063in.) from case for 10s | 260 | C | ||||
| Electrical Characteristics of the DiodeTj= 25unless otherwise specified | ||||||
| Static Diode Forward Voltage | VF | IF= 10A | V | |||
| Static Diode Forward Voltage | VF | Tj= 25C | 2.0 | V | ||
| Static Diode Forward Voltage | VF | Tj= 125C | 2.1 | V | ||
| Static Diode Forward Voltage | VF | Tj= 150C | 2.1 | V | ||
| Switching Characteristic, Inductive Load | ||||||
| Dynamic, at Tj= 25 | ||||||
| Turn-on Delay Time | td(on) | VCC= 600V, IC=10A, VGE= -15v~15V, Rg=47 | 85 | ns | ||
| Rise Time | tr | 50 | ns | |||
| Turn-on Energy | Eon | 0.98 | mJ | |||
| Turn-off Delay Time | td(off) | 262 | ns | |||
| Fall Time | tf | 140 | ns | |||
| Turn-off Energy | Eoff | 0.48 | mJ | |||
| Dynamic, at Tj= 125 | ||||||
| Turn-on Delay Time | td(on) | VCC= 600V, IC=10A, VGE= -15v~15V, Rg=47 | 90 | ns | ||
| Rise Time | tr | 60 | ns | |||
| Turn-on Energy | Eon | 1.33 | mJ | |||
| Turn-off Delay Time | td(off) | 285 | ns | |||
| Fall Time | tf | 150 | ns | |||
| Turn-off Energy | Eoff | 0.9 | mJ | |||
| Dynamic, at Tj= 150 | ||||||
| Turn-on Delay Time | td(on) | VCC= 600V, IC=10A, VGE= -15v~15V, Rg=47 | 95 | ns | ||
| Rise Time | tr | 65 | ns | |||
| Turn-on Energy | Eon | 1.68 | mJ | |||
| Turn-off Delay Time | td(off) | 308 | ns | |||
| Fall Time | tf | 160 | ns | |||
| Turn-off Energy | Eoff | 1.05 | mJ | |||
| Electrical Characteristics of the DIODE | ||||||
| Dynamic, at Tj= 25 | ||||||
| Reverse Recovery Current | Irr | IF=10A, VR=600V, -di/dt=500A/s | 12.5 | A | ||
| Reverse Recovery Charge | Qrr | 0.9 | uC | |||
| Reverse Recovery Energy | Erec | 0.25 | mJ | |||
| Dynamic, at Tj= 125 | ||||||
| Reverse Recovery Current | Irr | IF=10A, VR=600V, -di/dt=500A/s | 14.4 | A | ||
| Reverse Recovery Charge | Qrr | 1.7 | uC | |||
| Reverse Recovery Energy | Erec | 0.5 | mJ | |||
| Dynamic, at Tj= 150 | ||||||
| Reverse Recovery Current | Irr | IF=10A, VR=600V, -di/dt=500A/s | 15.3 | A | ||
| Reverse Recovery Charge | Qrr | 2.0 | uC | |||
| Reverse Recovery Energy | Erec | 0.58 | mJ | |||
| Thermal Resistance | ||||||
| IGBT Thermal Resistance, Junction - Case | Rth(j-c) | 0.95 | K/W | |||
| Diode Thermal Resistance, Junction - Case | Rth(j-c) | 1.70 | K/W | |||
| Thermal Resistance, Junction - Ambient | Rth(j-a) | 40 | K/W | |||
2411220011_YANGJIE-DGW10N120CTL_C20600418.pdf
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