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quality Power Field Effect Transistor XDS TX15N10B N Channel MOSFET Suitable for Battery Powered Circuits factory
quality Power Field Effect Transistor XDS TX15N10B N Channel MOSFET Suitable for Battery Powered Circuits factory

Power Field Effect Transistor XDS TX15N10B N Channel MOSFET Suitable for Battery Powered Circuits

Key Attributes
Model Number: TX15N10B
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
15A
Operating Temperature -:
-55℃~+175℃
RDS(on):
100mΩ@10V,8A
Gate Threshold Voltage (Vgs(th)):
3V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
23pF@15V
Number:
1 N-channel
Output Capacitance(Coss):
58pF
Input Capacitance(Ciss):
890pF@15V
Pd - Power Dissipation:
34.7W
Gate Charge(Qg):
60nC@10V
Mfr. Part #:
TX15N10B
Package:
TO-252
Product Description

Product Description

The TX15N10B is an N-Channel logic enhancement mode power field-effect transistor utilizing high cell density, DMOS trench technology. This advanced process minimizes on-state resistance, making the device particularly suitable for low-voltage applications such as cellular phones, notebook computers, and other battery-powered circuits. Its design prioritizes low in-line power loss within a very small surface mount package.

Product Attributes

  • Brand: XDSemi
  • Part Number: TX15N10B
  • Technology: DMOS Trench
  • Package: TO-252

Technical Specifications

ParameterSymbolRatingsUnitsTest ConditionsMin.Typ.Max.
Maximum Ratings
Drain-Source VoltageVDSS100V
Gate-Source VoltageVGSS±20V
Continuous Drain CurrentID15ATc=25
Continuous Drain CurrentID14ATc=70
Pulsed Drain CurrentIDM59ATc=25
Power DissipationPD34.7WTc=25
Power DissipationPD22.2WTc=70
Operating Junction and Storage Temperature RangeTJ,Tstg-55~+175
Electrical Characteristics
Drain-Source Breakdown VoltageBVDSS100VVGS=0V, ID=250μA100
Gate Threshold VoltageVGS(th)VVDS=VGS, ID=250μA3
Gate-Body LeakageIGSSnAVDS=0V, VGS=±20V±100
Zero Gate Voltage Drain CurrentIDSSμAVDS=100V, VGS=0V1
Drain-Source On-ResistanceRDS(ON)mΩVGS=10V, ID=8A80100
Diode Forward VoltageVSDVIS=8A, VGS=0V0.91.2
Dynamic Characteristics
Total Gate ChargeQgnCVDD=80V, VGS=10V, ID=10A24
Total Gate ChargeQgnCVDD=80V, VGS=4.5V, ID=10A13
Gate-Source ChargeQgsnC4.67.6
Gate-Drain ChargeQgdnC0.9
Gate ResistanceRgΩVDS=0V,VGS=0V, f=1MHz39
Input CapacitanceCisspFVDS=15V, VGS=0V, f=1MHz890
Output CapacitanceCosspF58
Reverse Transfer CapacitanceCrsspF23
Switching Characteristics
Turn-On Delay Timetd(on)nsVDS =50V, RG=1Ω RL=5Ω,VGEN=10V,15
Turn-On Rise Timetrns20
Turn-Off Delay Timetd(off)ns25
Turn-Off Fall Timetfns30
Thermal Characteristics
Thermal resistance, case to sink typ.RthCS0.5/W
Thermal resistance junction to case.RthJC3.6/W
Thermal resistance junction to ambient.RthJA110/W

2410122020_XDS-TX15N10B_C448634.pdf

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