High speed switching transistor YANGJIE DGP15N65CTL designed for hard and soft switching applications

Key Attributes
Model Number: DGP15N65CTL
Product Custom Attributes
Mfr. Part #:
DGP15N65CTL
Package:
TO-220
Product Description

Product Overview

The DGP15N65CTL0 is a high-speed smooth switching IGBT discrete device designed for hard and soft switching applications. It features a maximum junction temperature of 175, a positive temperature coefficient, and high ruggedness with temperature stability. This IGBT is suitable for use in soft switching applications, air conditioning systems, and motor drive inverters.

Product Attributes

  • Brand: Yangjie
  • Certifications: RoHS COMPLIANT
  • Origin: www.21yangjie.com

Technical Specifications

ParameterSymbolConditionsMin.Typ.Max.Unit
Maximum Ratings
Collector-Emitter Breakdown VoltageVCEDC650V
Collector Current, limited by TjmaxICTC= 25C30A
Collector Current, limited by TjmaxICTC= 100C15A
Diode Forward Current, limited by TjmaxIFTC= 25C30A
Diode Forward Current, limited by TjmaxIFTC= 100C15A
Continuous Gate-Emitter VoltageVGE20V
Transient Gate-Emitter Voltage (tp10s,D<0.010)VGE30V
Turn off Safe Operating AreaVCE 600V, Tj 150C45A
Pulsed Collector Current, VGE=15V, tp limited by TjmaxICM45A
Short Circuit Withstand Time, VGE= 15V, VCE 400VTsc5s
Diode Pulsed Current, tp limited by TjmaxIFpuls45A
Power Dissipation , Tj=175C,Tc=25CPtot110W
Electrical Characteristics of the IGBT
Static Collector-Emitter Breakdown VoltageBVCESVGE=0V, IC=250A650--V
Gate Threshold VoltageVGE(th)VGE=VCE, IC=1mA5.05.86.5V
Collector-Emitter Saturation VoltageVCE(sat)VGE=15V, IC=15A Tj=25C1.40-V
Collector-Emitter Saturation VoltageVCE(sat)VGE=15V, IC=15A Tj=125C1.55-V
Collector-Emitter Saturation VoltageVCE(sat)VGE=15V, IC=15A Tj=150C1.601.70V
Zero Gate Voltage Collector CurrentICESVCE=650V, VGE=0V Tj= 25C0.25-mA
Zero Gate Voltage Collector CurrentICESVCE=650V, VGE=0V Tj=150C1.00-mA
Gate-Emitter Leakage CurrentIGESVCE= 0V, VGE= 20V200nA
Input CapacitanceCiesVCE= 25V, VGE= 0V, f = 1MHz0.88-nF
Output capacitanceCoes0.04-nF
Reverse Transfer CapacitanceCres0.01-nF
Gate ChargeQGVCC=300V,IC=15A, VGE=15V0.069-uC
Short circuit collector currentICSCVGE=15V,tSC5us VCC=400V, Tj,start=25C110-A
Electrical Characteristics of the Diode
Diode Forward VoltageVFIF= 15A Tj= 25C1.902.40V
Diode Forward VoltageVFIF= 15A Tj= 125C1.70-V
Diode Forward VoltageVFIF= 15A Tj= 150C1.60-V
Reverse Recovery CurrentIrrIF=15A, VR=300V, -di/dt= 380A/s, Tj= 25-6A
Diode reverse recovery timetrrIF=15A, VR=300V, -di/dt= 380A/s, Tj= 25-197ns
Reverse Recovery ChargeQrrIF=15A, VR=300V, -di/dt= 380A/s, Tj= 25-0.24uC
Reverse Recovery EnergyErecIF=15A, VR=300V, -di/dt= 380A/s, Tj= 25-0.06mJ
Reverse Recovery CurrentIrrIF=15A, VR=300V, -di/dt= 380A/s, Tj= 125-7A
Diode reverse recovery timetrrIF=15A, VR=300V, -di/dt= 380A/s, Tj= 125-213ns
Reverse Recovery ChargeQrrIF=15A, VR=300V, -di/dt= 380A/s, Tj= 125-0.58uC
Reverse Recovery EnergyErecIF=15A, VR=300V, -di/dt= 380A/s, Tj= 125-0.11mJ
Reverse Recovery CurrentIrrIF=15A, VR=300V, -di/dt= 380A/s, Tj= 150-8A
Diode reverse recovery timetrrIF=15A, VR=300V, -di/dt= 380A/s, Tj= 150-221ns
Reverse Recovery ChargeQrrIF=15A, VR=300V, -di/dt= 380A/s, Tj= 150-0.71uC
Reverse Recovery EnergyErecIF=15A, VR=300V, -di/dt= 380A/s, Tj= 150-0.14mJ
Switching Characteristic, Inductive Load
Turn-on Delay Timetd(on)Tj=25C VCC= 300V, IC=15A, VGE=-5V~15V, Rg=5110-ns
Rise TimetrTj=25C VCC= 300V, IC=15A, VGE=-5V~15V, Rg=5128-ns
Turn-on EnergyEonTj=25C VCC= 300V, IC=15A, VGE=-5V~15V, Rg=510.33-mJ
Turn-off Delay Timetd(off)Tj=25C VCC= 300V, IC=15A, VGE=-5V~15V, Rg=5168-ns
Fall TimetfTj=25C VCC= 300V, IC=15A, VGE=-5V~15V, Rg=51138-ns
Turn-off EnergyEoffTj=25C VCC= 300V, IC=15A, VGE=-5V~15V, Rg=510.16-mJ
Turn-on Delay Timetd(on)Tj=125C VCC= 300V, IC=15A, VGE=-5V~15V, Rg=5114-ns
Rise TimetrTj=125C VCC= 300V, IC=15A, VGE=-5V~15V, Rg=5136-ns
Turn-on EnergyEonTj=125C VCC= 300V, IC=15A, VGE=-5V~15V, Rg=510.38-mJ
Turn-off Delay Timetd(off)Tj=125C VCC= 300V, IC=15A, VGE=-5V~15V, Rg=5169-ns
Fall TimetfTj=125C VCC= 300V, IC=15A, VGE=-5V~15V, Rg=51161-ns
Turn-off EnergyEoffTj=125C VCC= 300V, IC=15A, VGE=-5V~15V, Rg=510.27-mJ
Turn-on Delay Timetd(on)Tj=150C VCC= 300V, IC=15A, VGE=-5V~15V, Rg=5116-ns
Rise TimetrTj=150C VCC= 300V, IC=15A, VGE=-5V~15V, Rg=5143-ns
Turn-on EnergyEonTj=150C VCC= 300V, IC=15A, VGE=-5V~15V, Rg=510.43-mJ
Turn-off Delay Timetd(off)Tj=150C VCC= 300V, IC=15A, VGE=-5V~15V, Rg=5169-ns
Fall TimetfTj=150C VCC= 300V, IC=15A, VGE=-5V~15V, Rg=51182-ns
Turn-off EnergyEoffTj=150C VCC= 300V, IC=15A, VGE=-5V~15V, Rg=510.32-mJ
Thermal Resistance
IGBT Thermal Resistance, Junction - CaseRth(j-c)1.35K/W
Diode Thermal Resistance, Junction - CaseRth(j-c)1.5K/W
Thermal Resistance, Junction - AmbientRth(j-a)60K/W
Operating Conditions
Operating Junction TemperatureTj-40+175C
Storage TemperatureTs-55+150C
Soldering Temperature, wave soldering 1.6mm (0.063in.) from case for 10s260C

2411220737_YANGJIE-DGP15N65CTL_C22468432.pdf

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