Power electronics IGBT YANGJIE MG150HF12TLC1 featuring trench technology and ultra fast soft recovery anti parallel FWD
Key Attributes
Model Number:
MG150HF12TLC1
Product Custom Attributes
Td(off):
229ns
Pd - Power Dissipation:
960W
Td(on):
124ns
Operating Temperature:
-40℃~+150℃
Collector-Emitter Breakdown Voltage (Vces):
1.2kV
Reverse Transfer Capacitance (Cres):
0.48nF
Input Capacitance(Cies):
14.5nF
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
5.2V@5mA
Pulsed Current- Forward(Ifm):
300A
Switching Energy(Eoff):
10.2mJ
Turn-On Energy (Eon):
10.4mJ
Mfr. Part #:
MG150HF12TLC1
Product Description
Product Overview
The MG150HF12TLC1 S-M409 is a high-performance IGBT module designed for demanding power electronics applications. It features low VCE(sat) with Trench technology, a positive temperature coefficient for VCE(sat), high short circuit capability, and an integrated ultra-fast & soft recovery anti-parallel FWD. Its low inductance and maximum junction temperature of 175 make it suitable for inverters, servo drives, UPS, and soft switching welding machines.
Product Attributes
- Brand: Yangjie
- Certifications: RoHS
- Origin: China (implied by website)
Technical Specifications
| Parameter | Symbol | Conditions | Value | Unit | Min. | Typ. | Max. | |
| IGBT Absolute Maximum Ratings | ||||||||
| Collector-Emitter Voltage | VCES | VGE=0V, IC=1mA, Tvj=25 | 1200 | V | ||||
| Continuous Collector Current | IC | TC=100 | 150 | A | ||||
| Repetitive Peak Collector Current | ICRM | tp=1ms | 300 | A | ||||
| Gate-Emitter Voltage | VGES | Tvj=25 | ±20 | V | ||||
| Total Power Dissipation | Ptot | TC=25, Tvjmax=175 | 960 | W | ||||
| IGBT Characteristic Values | ||||||||
| Gate-Emitter Threshold Voltage | VGE(th) | VGE=VCE, IC=5mA,Tvj=25 | V | 5.2 | 5.8 | 6.5 | ||
| Collector-Emitter Cut-off Current | ICES | VCE=1200V,VGE=0V, Tvj=25 | mA | 1.0 | ||||
| Collector-Emitter Saturation Voltage | VCE(sat) | IC=150A,VGE=15V, Tvj=25 | V | 1.90 | 2.20 | |||
| Collector-Emitter Saturation Voltage | VCE(sat) | IC=150A,VGE=15V, Tvj=125 | V | 2.10 | ||||
| Collector-Emitter Saturation Voltage | VCE(sat) | IC=150A,VGE=15V, Tvj=150 | V | 2.20 | ||||
| Gate Charge | QG | uC | 1.1 | |||||
| Internal Gate Resistance | Rgint | Ω | 5 | |||||
| Input Capacitance | Cies | VCE=25V,VGE=0V, f=1MHz, Tvj=25 | nF | 14.5 | ||||
| Reverse Transfer Capacitance | Cres | nF | 0.48 | |||||
| Gate-Emitter leakage current | IGES | VCE=0V, VGE=20V,Tvj=25 | nA | 400 | ||||
| Turn-on Delay Time | td(on) | IC=150A, VCE=600V, VGE=±15V, RG=1.1Ω, Tvj=25 | ns | 124 | ||||
| Rise Time | tr | IC=150A, VCE=600V, VGE=±15V, RG=1.1Ω, Tvj=25 | ns | 51 | ||||
| Turn-off Delay Time | td(off) | IC=150A, VCE=600V, VGE=±15V, RG=1.1Ω, Tvj=25 | ns | 229 | ||||
| Fall Time | tf | IC=150A, VCE=600V, VGE=±15V, RG=1.1Ω, Tvj=25 | ns | 172 | ||||
| Energy Dissipation During Turn-on Time | Eon | IC=150A, VCE=600V, VGE=±15V, RG=1.1Ω, Tvj=25 | mJ | 10.4 | ||||
| Energy Dissipation During Turn-off Time | Eoff | IC=150A, VCE=600V, VGE=±15V, RG=1.1Ω, Tvj=25 | mJ | 10.2 | ||||
| Turn-on Delay Time | td(on) | IC=150A, VCE=600V, VGE=±15V, RG=1.1Ω, Tvj=150 | ns | 135 | ||||
| Rise Time | tr | IC=150A, VCE=600V, VGE=±15V, RG=1.1Ω, Tvj=150 | ns | 62 | ||||
| Turn-off Delay Time | td(off) | IC=150A, VCE=600V, VGE=±15V, RG=1.1Ω, Tvj=150 | ns | 270 | ||||
| Fall Time | tf | IC=150A, VCE=600V, VGE=±15V, RG=1.1Ω, Tvj=150 | ns | 291 | ||||
| Energy Dissipation During Turn-on Time | Eon | IC=150A, VCE=600V, VGE=±15V, RG=1.1Ω, Tvj=150 | mJ | 15.3 | ||||
| Energy Dissipation During Turn-off Time | Eoff | IC=150A, VCE=600V, VGE=±15V, RG=1.1Ω, Tvj=150 | mJ | 14.2 | ||||
| SC Data | Isc | tp≤10us, VGE=15V, Tvj=150,VCC=900V, VCEM≤1200V | 650 | A | ||||
| Diode Absolute Maximum Ratings | ||||||||
| Repetitive Peak Reverse Voltage | VRRM | Tvj=25 | 1200 | V | ||||
| Continuous DC Forward Current | IF | 150 | A | |||||
| Repetitive Peak Forward Current | IFRM | tp=1ms | 300 | A | ||||
| Diode Characteristic Values | ||||||||
| Forward Voltage | VF | IF=150A,Tvj=25 | V | 2.00 | 2.80 | |||
| Forward Voltage | VF | IF=150A,Tvj=125 | V | 1.80 | ||||
| Forward Voltage | VF | IF=150A,Tvj=150 | V | 1.70 | ||||
| Recovered Charge | Qrr | IF=150A, VR=600V, -diF/dt=2300A/us, Tvj=25 | uC | 10.7 | ||||
| Peak Reverse Recovery Current | Irr | IF=150A, VR=600V, -diF/dt=2300A/us, Tvj=25 | A | 116 | ||||
| Reverse Recovery Energy | Erec | IF=150A, VR=600V, -diF/dt=2300A/us, Tvj=25 | mJ | 3.8 | ||||
| Recovered Charge | Qrr | IF=150A, VR=600V, -diF/dt=2300A/us, Tvj=150 | uC | 21.5 | ||||
| Peak Reverse Recovery Current | Irr | IF=150A, VR=600V, -diF/dt=2300A/us, Tvj=150 | A | 134 | ||||
| Reverse Recovery Energy | Erec | IF=150A, VR=600V, -diF/dt=2300A/us, Tvj=150 | mJ | 7.8 | ||||
| Module Characteristics | ||||||||
| Isolation Voltage | Visol | t=1min,f=50Hz | 2500 | V | ||||
| Maximum Junction Temperature | Tjmax | 175 | ||||||
| Operating Junction Temperature | Tvj op | -40 | 150 | |||||
| Storage Temperature | Tstg | -40 | 125 | |||||
| Thermal Resistance Junction to Case (per IGBT) | RθJC | K/W | 0.155 | |||||
| Thermal Resistance Junction to Case (per Diode) | RθJC | K/W | 0.29 | |||||
| Thermal Resistance Case to Sink | RθCS | Conductive grease applied | K/W | 0.05 | ||||
| Module Electrodes Torque | Mt | Recommended(M5) | N·m | 2.5 | 5.0 | |||
| Module-to-Sink Torque | Ms | Recommended(M6) | N·m | 3.0 | 5.0 | |||
| Weight of Module | G | 150 | g | |||||
2508211052_YANGJIE-MG150HF12TLC1_C2942688.pdf
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