N Channel MOSFET YANGJIE YJA3134KB with Enhanced Load Switching and High Power Dissipation Capabilities
Key Attributes
Model Number:
YJA3134KB
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
700mA
RDS(on):
700mΩ@1.8V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.1V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
2.5pF@10V
Number:
1 N-channel
Output Capacitance(Coss):
20pF
Pd - Power Dissipation:
360mW
Input Capacitance(Ciss):
56pF@10V
Gate Charge(Qg):
1nC@4.5V
Mfr. Part #:
YJA3134KB
Package:
DFN-3(0.6x1)
Product Description
Product Overview
The YJA3134KB is a N-Channel Enhancement Mode Field Effect Transistor utilizing Trench Power LV MOSFET technology. It offers high power and current handling capabilities, ESD protection up to 2.0KV (HBM), and meets UL 94 V-0 flammability rating. This device is designed for PWM applications and load switching.
Product Attributes
- Brand: Yangzhou Yangjie Electronic Technology Co., Ltd.
- Origin: China
- Certifications: RoHS Compliant, UL 94 V-0 Flammability Rating
Technical Specifications
| Parameter | Symbol | Conditions | Min | Typ | Max | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-source Voltage | VDS | 20 | V | |||
| Gate-source Voltage | VGS | ±12 | V | |||
| Drain Current | ID | TA=25℃ | 0.7 | A | ||
| Drain Current | ID | TA=100℃ | 0.44 | A | ||
| Pulsed Drain Current | IDM | 3 | A | |||
| Total Power Dissipation | PD | TA=25℃ | 0.9 | W | ||
| Total Power Dissipation | PD | TA=100℃ | 0.36 | W | ||
| Junction and Storage Temperature Range | TJ ,TSTG | -55 | +150 | ℃ | ||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS= 0V, ID=250µA | 20 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=20V,VGS=0V | 1 | µA | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=20V,VGS=0V, Tj=150℃ | 100 | µA | ||
| Gate-Body Leakage Current | IGSS | VGS= ±10V, VDS=0V | ±10 | µA | ||
| Gate Threshold Voltage | VGS(th) | VDS= VGS, ID=250µA | 0.35 | 0.75 | 1.1 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS= 4.5V, ID=0.7A | 180 | 300 | mΩ | |
| Static Drain-Source On-Resistance | RDS(ON) | VGS= 2.5V, ID=0.5A | 260 | 350 | mΩ | |
| Static Drain-Source On-Resistance | RDS(ON) | VGS= 1.8V, ID=0.2A | 490 | 700 | mΩ | |
| Diode Forward Voltage | VSD | IS=0.7A,VGS=0V | 1.2 | V | ||
| Gate Resistance | Rg | f=1 MHz | 50 | Ω | ||
| Maximum Body-Diode Continuous Current | IS | 0.7 | A | |||
| Dynamic Parameters | ||||||
| Input Capacitance | Ciss | VDS=10V,VGS=0V,f=1MHZ | 56 | pF | ||
| Output Capacitance | Coss | VDS=10V,VGS=0V,f=1MHZ | 20 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS=10V,VGS=0V,f=1MHZ | 2.5 | pF | ||
| Switching Parameters | ||||||
| Total Gate Charge | Qg | VGS=4.5V,VDS=10V,ID=0.7A | 1 | nC | ||
| Gate Source Charge | Qgs | VGS=4.5V,VDS=10V,ID=0.7A | 0.28 | nC | ||
| Gate Drain Charge | Qg | VGS=4.5V,VDS=10V,ID=0.7A | 0.22 | nC | ||
| Reverse Recovery Chrage | Qrr | IF=0.7A, di/dt=20A/us | 0.4 | nC | ||
| Reverse Recovery Time | trr | IF=0.7A, di/dt=20A/us | 14.4 | ns | ||
| Turn-on Delay Time | tD(on) | VGS=4.5V,VDD=10V,RG=10Ω,ID=700mA | 2 | ns | ||
| Turn-on Rise Time | tr | VGS=4.5V,VDD=10V,RG=10Ω,ID=700mA | 18.8 | ns | ||
| Turn-off Delay Time | tD(off) | VGS=4.5V,VDD=10V,RG=10Ω,ID=700mA | 10 | ns | ||
| Turn-off Fall Time | tf | VGS=4.5V,VDD=10V,RG=10Ω,ID=700mA | 23 | ns | ||
2410121521_YANGJIE-YJA3134KB_C20605534.pdf
Related Products
power control Sensata B612F-2T-YEC module for AC DC variable voltage output applications up to 15KW
Sensata B-2T, B-2 Series Power Modules The Sensata B-2T and B-2 Series Power Modules offer versatile solutions for AC or DC variable voltage output applications, capable of handling up to 15KW. These modules feature eight circuit options and are UL Recognized (E72445), providing reliable performance ...
DO 214AC SMA package SMA4742AQ Zener diode with low profile design and high forward surge capability
Product OverviewThe SMA4735AQ thru SMA4764AQ series are surface mount Zener diodes featuring a low profile package ideal for automated placement. They offer high forward surge capability and meet MSL level 1 standards. The 'Q' suffix indicates AEC-Q101 qualification, making them suitable for ...
General purpose Zener diode XZT BZT52B30 featuring planar die construction for medium current electronic
BZT52B2V4 thru BZT52B43 ZENER DIODEThe BZT52B2V4 thru BZT52B43 series is a range of Zener diodes featuring planar die construction. These diodes are designed for general purpose, medium current applications and are ideally suited for automated assembly processes. They are available in a lead-free ...
Low voltage N channel MOSFET XCH GSW25N65EF Multi EPI Super Junction for power conversion solutions
Product OverviewThe GSW/GSA25N65EF is a low voltage N-channel Multi-EPI Super-Junction power MOSFET from XCH Semiconductor. It features advanced technology for enhanced characteristics such as fast switching times, low Ciss and Crss, low on-resistance, and excellent avalanche characteristics. This ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
