Robust industrial IGBT module YANGJIE MG50HF12TLC1 with low VCEsat and high short circuit capability
Key Attributes
Model Number:
MG50HF12TLC1
Product Custom Attributes
Pd - Power Dissipation:
480W
Td(off):
350ns
Td(on):
430ns
Operating Temperature:
-40℃~+150℃
Collector-Emitter Breakdown Voltage (Vces):
1.2kV
Reverse Transfer Capacitance (Cres):
0.14nF
Input Capacitance(Cies):
3.4nF
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
5V@3mA
Pulsed Current- Forward(Ifm):
100A
Switching Energy(Eoff):
3.1mJ
Turn-On Energy (Eon):
11mJ
Mfr. Part #:
MG50HF12TLC1
Product Description
Product Overview
The MG50HF12TLC1 S-M392 is a high-performance IGBT module designed for inverter applications, AC/DC servo drive amplifiers, UPS systems, and soft switching welding machines. It features low VCE(sat) with Trench technology, a positive temperature coefficient for VCE(sat), high short circuit capability, and includes an ultra-fast & soft recovery anti-parallel FWD. With a maximum junction temperature of 175, this module offers reliability and efficiency for demanding industrial applications.
Product Attributes
- Brand: Yangjie
- Certifications: RoHS Compliant
- Origin: www.21yangjie.com
Technical Specifications
| Parameter | Symbol | Conditions | Value | Unit | Min. | Typ. | Max. |
| IGBT Absolute Maximum Ratings | VCES | VGE=0V, IC=1mA, Tvj=25 | 1200 | V | |||
| IC | TC=100 | 50 | A | ||||
| ICRM | tp=1ms | 100 | A | ||||
| Gate-Emitter Voltage | VGES | Tvj=25 | 20 | V | |||
| Total Power Dissipation | Ptot | TC=25, Tvjmax=175 | 480 | W | |||
| Gate-Emitter Threshold Voltage | VGE(th) | VGE=VCE, IC=3mA, Tvj=25 | V | 5.0 | 6.2 | 7.0 | |
| Collector-Emitter Cut-off Current | ICES | VCE=1200V, VGE=0V, Tvj=25 | mA | 1.0 | |||
| Collector-Emitter Saturation Voltage | VCE(sat) | IC=50A, VGE=15V, Tvj=25 | V | 1.95 | |||
| IC=50A, VGE=15V, Tvj=125 | V | 2.30 | |||||
| IC=50A, VGE=15V, Tvj=150 | V | 2.45 | |||||
| Capacitance | Cies | VCE=25V, VGE=0V, f=1MHz, Tvj=25 | nF | 3.4 | |||
| Cres | nF | 0.14 | |||||
| Gate-Emitter leakage current | IGES | VCE=0V, VGE=20V, Tvj=25 | nA | 400 | |||
| Switching Characteristics (Tvj=25) | td(on) | IC=50A, VCE=600V, VGE=15V, RG=15 | ns | 430 | |||
| tr | ns | 328 | |||||
| td(off) | ns | 350 | |||||
| tf | ns | 207 | |||||
| Eon | mJ | 11.0 | |||||
| Eoff | mJ | 3.1 | |||||
| td(on) | IC=50A, VCE=600V, VGE=15V, RG=15, Tvj=150 | ns | 348 | ||||
| tr | ns | 358 | |||||
| td(off) | ns | 388 | |||||
| tf | ns | 258 | |||||
| Eon | mJ | 14.7 | |||||
| Eoff | mJ | 4.1 | |||||
| SC Data | Isc | tp10us, VGE=15V, Tvj=150, VCC=600V, VCEM1200V | 200 | A | |||
| Diode Absolute Maximum Ratings | VRRM | Tvj=25 | 1200 | V | |||
| IF | 50 | A | |||||
| IFRM | tp=1ms | 100 | A | ||||
| Diode Characteristic Values | VF | IF=50A, Tvj=25 | V | 1.85 | 2.80 | ||
| IF=50A, Tvj=125 | V | 1.50 | |||||
| IF=50A, Tvj=150 | V | 1.40 | |||||
| Diode Switching Characteristics (Tvj=25) | Qrr | IF=50A, VR=600V, -diF/dt =150A/us | uC | 1.14 | |||
| Irr | A | 7 | |||||
| Erec | mJ | 0.28 | |||||
| Qrr | IF=50A, VR=600V, -diF/dt =150A/us, Tvj=150 | uC | 4.54 | ||||
| Irr | A | 12 | |||||
| Erec | mJ | 1.26 | |||||
| Module Characteristics | Visol | t=1min, f=50Hz | 2500 | V | |||
| Tjmax | 175 | ||||||
| Tvj op | -40 | 150 | |||||
| Tstg | -40 | 125 | |||||
| Thermal Resistance | RJC | per IGBT | K/W | 0.31 | |||
| per Diode | K/W | 0.78 | |||||
| Case to Sink Thermal Resistance | RCS | Conductive grease applied | K/W | 0.05 | |||
| Module Electrodes Torque | Mt | Recommended(M5) | Nm | 2.5 | 5.0 | ||
| Module-to-Sink Torque | Ms | Recommended(M6) | Nm | 3.0 | 5.0 | ||
| Weight of Module | G | 150 | g |
2508211052_YANGJIE-MG50HF12TLC1_C2942685.pdf
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