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quality Gallium Nitride Gan Hemts for Broadband Rf Applications Featuring Wolfspeed CGHV40050P Transistor factory
quality Gallium Nitride Gan Hemts for Broadband Rf Applications Featuring Wolfspeed CGHV40050P Transistor factory

Gallium Nitride Gan Hemts for Broadband Rf Applications Featuring Wolfspeed CGHV40050P Transistor

Key Attributes
Model Number: CGHV40050P
Product Custom Attributes
Mfr. Part #:
CGHV40050P
Package:
440206
Product Description

Product Overview

The MACOM CGHV40050 is an unmatched Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) designed for general-purpose, broadband RF and microwave applications up to 4 GHz. Operating from a 50-volt rail, this device offers high efficiency, high gain, and wide bandwidth capabilities. It is suitable for a range of applications from narrow band UHF, L, and S-Band to multi-octave bandwidth amplifiers. The transistor is available in 2-lead flange and pill package types. Large signal models are available for ADS and MWO.

Product Attributes

  • Brand: MACOM Technology Solutions Inc.
  • Material: Gallium Nitride (GaN)
  • Package Types: 440193 & 440206
  • Part Numbers: CGHV40050F & CGHV40050P

Technical Specifications

Parameter Symbol Rating Units Conditions
Absolute Maximum Ratings
Drain-Source Voltage VDSS 150 V 25C
Gate-to-Source Voltage VGS -10, +2
Storage Temperature TSTG -65, +150 C
Operating Junction Temperature TJ 225
Maximum Forward Gate Current IGMAX 10.4 mA 25C
Maximum Drain Current IDMAX 6.3 A
Soldering Temperature TS 245 C 30 Seconds
Screw Torque 40 in-oz
Thermal Resistance, Junction to Case RJC 3.04 C/W CGHV40050P at PDISS = 41.6 W
Thermal Resistance, Junction to Case 3.11 C/W CGHV40050F at PDISS = 41.6 W
Case Operating Temperature TC -40, +80 C
Electrical Characteristics (TC = 25C)
Gate Threshold Voltage VGS(th) -3.8 VDC VDS = 10 V, ID = 10.4 mA
-3.0
-2.3
Gate Quiescent Voltage VGS(Q) -2.7 V VDS = 50 V, ID = 0.3 A
Saturated Drain Current IDS 6.8 A VDS = 6.0 V, VGS = 2.0 V
9.7
Drain-Source Breakdown Voltage VBR 100 VDC VGS = -8 V, ID = 10.4 mA
RF Characteristics (TC = 25C, F0 = 1.8 GHz unless otherwise noted)
Small Signal Gain GSS 17.5 dB VDD = 50 V, IDQ = 0.3 A
19
Power Gain GP 15.5 VDD = 50 V, IDQ = 0.3 A, POUT = PSAT
Output Power at Saturation PSAT 70 W VDD = 50 V, IDQ = 0.3 A
77
Drain Efficiency 48 % VDD = 50 V, IDQ = 0.3 A, POUT = PSAT
53
Output Mismatch Stress VSWR 10:1 Y No damage at all phase angles, VDD = 50 V, IDQ = 0.3 A, POUT = 50 W CW
Dynamic Characteristics
Input Capacitance CGS 16 pF VDS =50 V, VGS = -8 V, f = 1 MHz
Output Capacitance CDS 5
Feedback Capacitance CGD 0.3
Typical Performance Over 800 MHz - 2.0 GHz (TC = 25C), 50 V
Small Signal Gain 17.6 dB 800 MHz
16.9 1.2 GHz
17.7 1.4 GHz
17.5 1.8 GHz
14.8 2.0 GHz
Saturated Output Power 65 W 800 MHz
70 1.2 GHz
63 1.4 GHz
77 1.8 GHz
60 2.0 GHz
Drain Efficiency @ PSAT 63 % 800 MHz
63 1.2 GHz
60 1.4 GHz
53 1.8 GHz
52 2.0 GHz
Input Return Loss 5 dB 800 MHz
5.5 1.2 GHz
4.2 1.4 GHz
8 1.8 GHz
5 2.0 GHz

2412202123_Wolfspeed-CGHV40050P_C20559325.pdf

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