Low Collector Saturation Voltage PNP Silicon Transistor UTC 2SA1020G-Y-AB3-R for Power Amplifier Circuits
Key Attributes
Model Number:
2SA1020G-Y-AB3-R
Product Custom Attributes
Emitter-Base Voltage(Vebo):
3V
Current - Collector Cutoff:
1uA
DC Current Gain:
120@500mA,2V
Transition Frequency(fT):
100MHz
Vce Saturation(VCE(sat)):
500mV@1A,0.05A
Type:
PNP
Pd - Power Dissipation:
500mW
Current - Collector(Ic):
2A
Collector - Emitter Voltage VCEO:
50V
Operating Temperature:
-
Mfr. Part #:
2SA1020G-Y-AB3-R
Package:
SOT-89
Product Description
Product Overview
The UTC 2SA1020 is a PNP silicon epitaxial transistor designed for power amplifier and power switching applications. It features a low collector saturation voltage (VCE(SAT) = -0.5V MAX at IC = -1A) and high-speed switching time (tSTG = 1.0s TYP). It is a complementary part to the UTC 2SC2655.
Product Attributes
- Brand: UNISONIC TECHNOLOGIES CO., LTD
- Material: SILICON PNP EPITAXIAL TRANSISTOR
- Certifications: Lead Free, Halogen Free
Technical Specifications
| Parameter | Symbol | SOT-23 | SOT-89 | TO-92NL | Unit | Conditions |
| Collector-Base Voltage | VCBO | -50 | V | |||
| Collector-Emitter Voltage | VCEO | -50 | V | |||
| Emitter-Base Voltage | VEBO | -5 | V | |||
| Collector Current | IC | -2 | A | |||
| Collector Power Dissipation | PC | 300 | 500 | 900 | mW | (TA=25⁰C) |
| Junction Temperature | TJ | 150 | ⁰C | |||
| Storage Temperature | TSTG | -55 ~ +150 | ⁰C | |||
| Collector to Emitter Breakdown Voltage | BVCEO | -50 | V | IC=-10mA, IB=0 | ||
| Collector Cut-off Current | ICBO | -1.0 | μA | VCB=-50V, IE=0 | ||
| Emitter Cut-off Current | IEBO | -1.0 | μA | VEB=-5V, IC=0 | ||
| DC Current Gain | hFE1 | 70 - 240 | VCE=-2V, IC=-0.5A | |||
| DC Current Gain | hFE2 | 40 | VCE=-2V, IC=-1.5A | |||
| Collector to Emitter Saturation Voltage | VCE(SAT) | -0.5 | V | IC=-1A, IB=-0.05A | ||
| Base to Emitter Saturation Voltage | VBE(SAT) | -1.2 | V | IC=-1A, IB=-0.05A | ||
| Transition Frequency | fT | 100 | MHz | VCE=-2V, Ic=-0.5A | ||
| Collector Output Capacitance | COB | 40 | pF | VCB=-10V, IE=0, f=1MHz | ||
| Turn-on Time | tON | 0.1 | μs | |||
| Storage Time | tSTG | 1.0 | μs | |||
| Fall Time | tF | 0.1 | μs | |||
1809211815_UTC-2SA1020G-Y-AB3-R_C73305.pdf
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