TOSHIBA RN1510 TE85L F Silicon NPN Epitaxial Transistor Designed for Inverter and Interface Circuits
Key Attributes
Model Number:
RN1510(TE85L,F)
Product Custom Attributes
Current - Collector(Ic):
100mA
Pd - Power Dissipation:
300mW
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
RN1510(TE85L,F)
Package:
SMV
Product Description
Product Overview
The RN1510 and RN1511 are silicon NPN epitaxial transistors utilizing a PCT process, designed for switching, inverter circuits, interface circuits, and driver circuits. These devices are housed in a SMV (super mini type with 5 leads) package and feature built-in bias resistors, simplifying circuit design, reducing part count, and enabling equipment miniaturization. A variety of resistance values are available to suit different circuit designs. They are complementary to the RN2510 to RN2511 series.
Product Attributes
- Brand: TOSHIBA
- Type: Silicon NPN Epitaxial Transistor (PCT Process)
- Package: SMV (super mini type with 5 leads)
- Origin: Japan (implied by manufacturer and production start date)
Technical Specifications
| Characteristic | Symbol | Test Condition | RN1510/RN1511 Min | RN1510/RN1511 Typ. | RN1510/RN1511 Max | Unit |
| Absolute Maximum Ratings (Ta = 25C) (Q1, Q2 Common) | VCBO | 50 | V | |||
| VCEO | 50 | V | ||||
| VEBO | 5 | V | ||||
| IC | 100 | mA | ||||
| PC * | 300 | mW | ||||
| Tj | 150 | C | ||||
| Tstg | 55 | 150 | C | |||
| Electrical Characteristics (Ta = 25C) (Q1, Q2 Common) | ICBO | VCB = 50 V, IE = 0 mA | 100 | nA | ||
| IEBO | VEB = 5 V, IC = 0 mA | 100 | nA | |||
| hFE | VCE = 5 V, IC = 1 mA | 120 | 700 | |||
| VCE (sat) | IC = 5 mA, IB = 0.25 mA | 0.1 | 0.3 | V | ||
| fT | VCE = 10 V, IC = 5 mA | 250 | MHz | |||
| Cob | VCB = 10 V, IE = 0 mA, f = 1 MHz | 3 | 6 | pF | ||
| Input resistance (RN1510) | R1 | 3.29 | 4.7 | k | ||
| Input resistance (RN1511) | R1 | 7 | 10 | 13 | k |
2410311321_TOSHIBA-RN1510-TE85L-F_C20583594.pdf
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