Silicon Carbide Schottky Barrier Diode Wolfspeed E4D20120A 1200 Volt 20 Amp Automotive Grade Device
Product Overview
This 4th Generation 1200 V, 20 A Silicon Carbide (SiC) Schottky Barrier diode, designated E4D20120A, offers significant performance advantages over silicon-based solutions. Power electronics systems can achieve higher efficiency standards, reach higher frequencies, and attain greater power densities. The SiC diodes exhibit a low forward voltage (VF) drop with a positive temperature coefficient, zero reverse recovery current, zero forward recovery voltage, and temperature-independent switching behavior. They are automotive qualified (AEC Q101) and PPAP capable. These diodes can be easily paralleled without concern of thermal runaway, leading to reduced cooling requirements, improved thermal performance, and lower overall system costs. Key applications include Industrial Switched Mode Power Supplies, Uninterruptible & AUX Power Supplies, and Boost for PFC & DC-DC Stages, and Solar Inverters.
Product Attributes
- Brand: Wolfspeed
- Material: Silicon Carbide (SiC)
- Certifications: Automotive Qualified (AEC Q101), PPAP Capable
- Registered Trademarks: Wolfspeed, Wolfstreak logo
- Trademark: Wolfspeed logo
- RoHS Compliance: Compliant with EU Directive 2011/65/EC (RoHS2)
Technical Specifications
| Parameter | Symbol | Value | Unit | Test Conditions | Notes |
|---|---|---|---|---|---|
| Maximum Ratings (TC = 25C Unless Otherwise Specified) | |||||
| Repetitive Peak Reverse Voltage | VRRM | 1200 | V | DC Blocking Voltage | |
| Continuous Forward Current | IF | 54.5 | A | TJ = 25 C | Fig. 3 |
| 26 | A | TJ = 135 C | |||
| 20 | A | TJ = 150 C | |||
| Repetitive Peak Forward Surge Current | IFRM | 91 | A | TC = 25 C, tp = 10 ms, Half Sine Wave | |
| 61 | A | TC = 110 C, tp = 10 ms, Half Sine Wave | |||
| Power Dissipation | Ptot | 250 | W | TJ = 25 C | Fig. 4 |
| 112.5 | W | TJ = 110 C | |||
| Diode dV/dt ruggedness | dV/dt | 250 | V/ns | VR = 0-960V | |
| i2t value | ∫i2dt | 84.5 | A2s | TC = 25 C, tp = 10 ms | |
| 60.5 | A2s | TC = 110 C, tp = 10 ms | |||
| Electrical Characteristics | |||||
| Forward Voltage | VF | 1.5 | V | IF = 20 A, Tj = 25 C | Fig. 1 |
| 1.8 | V | IF = 20 A, Tj = 25 C | |||
| 2.2 | V | IF = 20 A, Tj = 175 C | |||
| Reverse Current | IR | 35 | µA | VR = 1200 V, Tj = 25 C | Fig. 2 |
| 200 | µA | VR = 1200 V, Tj = 25 C | |||
| 65 | µA | VR = 1200 V, Tj = 175 C | |||
| Total Capacitive Charge | QC | 99 | nC | VR = 800 V, Tj = 25 C | Fig. 5 |
| Total Capacitance | C | 1500 | pF | VR = 0 V, Tj = 25 C, f = 1 MHz | Fig. 6 |
| 93 | pF | VR = 400 V, Tj = 25 C, f = 1 MHz | |||
| 67 | pF | VR = 800 V, Tj = 25 C, f = 1 MHz | |||
| Capacitance Stored Energy | EC | 28 | µJ | VR = 800 V | Fig. 7 |
| Thermal & Mechanical Characteristics | |||||
| Thermal Resistance, Junction to Case (Typical) | Rθ, JC (TYP) | 0.47 | °C / W | ||
| Thermal Resistance, Junction to Case (Max) | Rθ, JC (TYP) | 0.60 | °C / W | ||
| Junction Temperature | Tj | -55 to +175 | °C | ||
| Case & Storage Temperature | Tc | -55 to +175 | °C | ||
| Mounting Torque | 1 | Nm | M3 Screw | ||
| 8.8 | lbf-in | 6-32 Screw | |||
Product Ordering Information
| Order Number | Packing Type |
|---|---|
| E4D20120A | Tube |
2312272042_Wolfspeed-E4D20120A_C7460312.pdf
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