TOSHIBA RN2302 LF PNP Bipolar Transistor Featuring Built in Bias Resistor for Compact Electronic Designs
Key Attributes
Model Number:
RN2302,LF
Product Custom Attributes
DC Current Gain:
50@10mA,5V
Emitter-Base Voltage VEBO:
10V
Current - Collector(Ic):
100mA
Operating Temperature:
-55℃~+150℃
Input Resistor:
10kΩ
Resistor Ratio:
1
Pd - Power Dissipation:
100mW
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
RN2302,LF
Package:
USM
Product Description
RN2301 to RN2306 Bipolar Transistors
The RN2301 to RN2306 series are silicon PNP epitaxial bipolar transistors featuring a built-in bias resistor (PCT Process). These transistors are designed for various applications including switching, inverter circuits, interfacing, and driver circuits. The integrated bias resistor simplifies circuit design by reducing the number of external components required, leading to smaller system sizes and faster assembly times. Toshiba offers a range of resistance values to suit diverse circuit designs. These devices are complementary to the RN1301 to RN1306 series.
Product Attributes
- Brand: Toshiba
- Type: Silicon PNP Epitaxial Bipolar Transistor
- Process: PCT Process
- Certifications: AEC-Q101 qualified
- Complementary Series: RN1301 to RN1306
Technical Specifications
| Part No. | Bias Resistor R1 (k) | Bias Resistor R2 (k) | Collector-emitter voltage (VCEO) | Collector current (IC) | Collector power dissipation (PC) | Junction temperature (Tj) | Storage temperature (Tstg) | Transition frequency (fT) (Typ.) | DC current gain (hFE) (Typ.) |
| RN2301 | 4.7 | 4.7 | -50 V | -5 mA | 100 mW (RN2301RN2304) | 150 C | -55 to 150 C | 200 MHz (RN2301RN2306) | 200 (RN2301RN2306) |
| RN2302 | 10 | 10 | -50 V | -5 mA | 100 mW (RN2301RN2304) | 150 C | -55 to 150 C | 200 MHz (RN2301RN2306) | 200 (RN2301RN2306) |
| RN2303 | 22 | 22 | -50 V | -5 mA | 100 mW (RN2301RN2304) | 150 C | -55 to 150 C | 200 MHz (RN2301RN2306) | 200 (RN2301RN2306) |
| RN2304 | 47 | 47 | -50 V | -5 mA | 100 mW (RN2301RN2304) | 150 C | -55 to 150 C | 200 MHz (RN2301RN2306) | 200 (RN2301RN2306) |
| RN2305 | 2.2 | 47 | -50 V | -5 mA | 100 mW (RN2305,RN2306) | 150 C | -55 to 150 C | 200 MHz (RN2301RN2306) | 200 (RN2301RN2306) |
| RN2306 | 4.7 | 47 | -50 V | -5 mA | 100 mW (RN2305,RN2306) | 150 C | -55 to 150 C | 200 MHz (RN2301RN2306) | 200 (RN2301RN2306) |
2410122008_TOSHIBA-RN2302-LF_C5349734.pdf
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