Power MOSFET Slkor SL4N65F featuring low gate charge and high power dissipation for switch mode power supplies
Product Overview
The SL4N65 is a high-performance N-Channel MOSFET designed for various power switching applications. It features low gate charge, fast switching speeds, and excellent dv/dt capability, making it ideal for high-efficiency switch mode power supplies, electronic lamp ballasts, and LED power supplies. This RoHS-compliant product is 100% avalanche tested for enhanced reliability.
Product Attributes
- Brand: SLKORMicro
- Certifications: RoHS
- Halogen Free: No
Technical Specifications
| Parameter | Symbol | IPAK | DPAK | TO-220FT | Unit | Test Conditions |
| Drain-Source Breakdown Voltage | VDSS | 650 | 650 | 650 | V | ID=250A, VGS=0V |
| Continuous Drain Current | ID | 2.5* | 2.5* | 4* | A | TC=100C / TC=25C |
| Gate-Source Voltage | VGSS | 30 | V | |||
| Single Pulsed Avalanche Energy | EAS | 184 | mJ | L=22.8mH, IAS=4A, VDD=50V, RG=25, Starting TJ=25 | ||
| Total Power Dissipation | PD | 144.4 | 157.1 | 23.3 | W | TC=25 |
| Operating Junction Temperature | TJ | 150 | ||||
| Storage Temperature | TSTG | -55+150 | ||||
| Gate Threshold Voltage | VGS(th) | 2.5 - 4.5 | V | VDS=VGS, ID=250A | ||
| Static Drain-Source On-Resistance | RDS(ON) | 2.6 | VGS=10V,ID=2A | |||
| Input capacitance | CISS | 531 | pF | VDS=25V,VGS=0V, f=1MHBZB | ||
| Output capacitance | COSS | 60 | pF | VDS=25V,VGS=0V, f=1MHBZB | ||
| Reverse transfer capacitance | CRSS | 50 | pF | VDS=25V,VGS=0V, f=1MHBZB | ||
| Total Gate Charge | QG | 18 | nC | VDS=520V,ID=4A, VGS=10V | ||
| Continuous Forward Current | IS | 4 | A | |||
| Forward Voltage | VSD | 1.5 | V | VGS=0V,IS=4A | ||
| Reverse recovery time | trr | 229 | ns | VGS=0V,IS=4A, dIF/dt=100A/s | ||
| Thermal Resistance,Junction to Case | Rth(j-c) | 0.87 | 0.8 | 5.36 | /W | |
| Thermal Resistance,Junction to Ambient | Rth(j-a) | 79.6 | 81.4 | 48.7 | /W | |
1809251636_Slkor-SL4N65F_C251156.pdf
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