High speed switching small signal mosfet transistor Slkor SL002P02K with 20 volt 200 milliamp rating
Key Attributes
Model Number:
SL002P02K
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
200mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
1.2Ω@4.5V
Gate Threshold Voltage (Vgs(th)):
1V@100uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
9pF
Number:
1 P-Channel
Output Capacitance(Coss):
10pF
Input Capacitance(Ciss):
115pF
Pd - Power Dissipation:
150mW
Gate Charge(Qg):
1.4nC@4.5V
Mfr. Part #:
SL002P02K
Package:
SOT-723
Product Description
Product Overview
The Pch -20V -200mA Small Signal MOSFET (SL002P02K) is designed for high-speed switching applications. Its small SOT-723 package and low voltage drive capability (1.2V) make it ideal for portable equipment. This device offers a continuous drain current of 200mA and a maximum power dissipation of 150mW.
Product Attributes
- Brand: SLKOR Micro
- Model: SL002P02K
Technical Specifications
| Parameter | Symbol | Conditions | Value | Unit |
| Drain - Source voltage | VDSS | -20 | V | |
| Continuous drain current | ID | 200 | mA | |
| Pulsed drain current | IDP*1 | 800 | mA | |
| Gate - Source voltage | VGSS | 10 | V | |
| Power dissipation | PD*2 | 150 | mW | |
| Junction temperature | Tj | 150 | ||
| Operating junction and storage temperature range | Tstg | -55 to +150 | ||
| Thermal resistance, junction - ambient | RthJA*2 | 833 | /W | |
| Drain - Source breakdown voltage | V(BR)DSS | VGS = 0V, ID = -1mA | -20 | V |
| Breakdown voltage temperature coefficient | V(BR)DSS | ID = -1mA, referenced to 25 | -21.9 | mV/ |
| Zero gate voltage drain current | IDSS | VDS = -20V, VGS = 0V | -1 | A |
| Gate - Source leakage current | IGSS | VGS = 10V, VDS = 0V | 10 | A |
| Gate threshold voltage | VGS(th) | VDS = -10V, ID = -100A | -0.3 to -1.0 | V |
| Gate threshold voltage temperature coefficient | VGS(th) | ID = -1mA, referenced to 25 | 2.4 | mV/ |
| Static drain - source on - state resistance | RDS(on)*3 | VGS = -4.5V, ID = -200mA | 1.2 | |
| Static drain - source on - state resistance | RDS(on)*3 | VGS = -2.5V, ID = -100mA | 1.5 | |
| Static drain - source on - state resistance | RDS(on)*3 | VGS = -1.8V, ID = -100mA | 2.2 | |
| Static drain - source on - state resistance | RDS(on)*3 | VGS = -1.5V, ID = -40mA | 3.5 | |
| Static drain - source on - state resistance | RDS(on)*3 | VGS = -1.2V, ID = -10mA | 9.6 | |
| Forward Transfer Admittance | |Yfs|*3 | VDS = -10V, ID = -200mA | 200 | mS |
| Input capacitance | Ciss | VGS = 0V | 115 | pF |
| Output capacitance | Coss | VDS = -10V | 10 | pF |
| Reverse transfer capacitance | Crss | f = 1MHz | 6 | pF |
| Turn - on delay time | td(on)*3 | VDD -10V,VGS = -4.5V | 6 | ns |
| Rise time | tr*3 | ID = -100mA | 4 | ns |
| Turn - off delay time | td(off)*3 | RL 100 | 17 | ns |
| Fall time | tf*3 | RG = 10 | 17 | ns |
| Total gate charge | Qg*3 | VDD -10V, ID = -200mA, VGS = -4.5V | 1.4 | nC |
| Gate - Source charge | Qgs*3 | 0.3 | nC | |
| Gate - Drain charge | Qg d*3 | 0.3 | nC | |
| Continuous forward current | IS | Ta = 25 | -100 | mA |
| Pulse forward current | ISP*1 | -800 | mA | |
| Forward voltage | VSD*3 | VGS = 0V, IS = -200mA | -1.2 | V |
2206231830_Slkor-SL002P02K_C3041285.pdf
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