power switching N Channel MOSFET Slkor SL60N06 with low on state resistance and high avalanche energy
Key Attributes
Model Number:
SL60N06
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
60A
Operating Temperature -:
-55℃~+175℃
RDS(on):
11.5mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
205pF
Number:
1 N-channel
Input Capacitance(Ciss):
2.35nF@25V
Pd - Power Dissipation:
110W
Gate Charge(Qg):
50nC
Mfr. Part #:
SL60N06
Package:
TO-220
Product Description
Product Overview
The SL60N06 is a high-performance N-Channel Power MOSFET designed for power switching applications. It features an ultra-low Rds(on) due to its high-density cell design, ensuring excellent efficiency. The device is fully characterized for avalanche voltage and current, offering good stability and uniformity with high EAS. Its excellent package design provides superior heat dissipation, and special process technology enhances ESD capability. This MOSFET is ideal for hard-switched and high-frequency circuits, including uninterruptible power supplies.
Product Attributes
- Brand: SLKORMicro
- Model: SL60N06
- Package: TO-220-3L
Technical Specifications
| Parameter | Symbol | Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| General Features | ||||||
| Drain-Source Voltage | VDS | 60 | V | |||
| Drain Current-Continuous | ID | 60 | A | |||
| Drain-Source On-State Resistance | RDS(ON) | VGS=10V | 9.1 | 11.5 | m | |
| High density cell design | ||||||
| Fully characterized avalanche voltage and current | ||||||
| Good stability and uniformity with high EAS | ||||||
| Excellent package for good heat dissipation | ||||||
| Special process technology for high ESD capability | ||||||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | TC=25 | 60 | V | ||
| Gate-Source Voltage | VGS | TC=25 | 20 | V | ||
| Drain Current-Continuous | ID | TC=25 | 60 | A | ||
| Drain Current-Continuous | ID (100) | TC=100 | 50 | A | ||
| Pulsed Drain Current | IDM | 300 | A | |||
| Maximum Power Dissipation | PD | 110 | W | |||
| Derating factor | 0.73 | W/ | ||||
| Single pulse avalanche energy | EAS | Note 5 | 450 | mJ | ||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 175 | |||
| Thermal Characteristic | ||||||
| Thermal Resistance,Junction-to-Case | RJC | Note 2 | 1.36 | /W | ||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250A | 60 | 68 | V | |
| Zero Gate Voltage Drain Current | IDSS | VDS=60V,VGS=0V | 1 | A | ||
| Gate-Body Leakage Current | IGSS | VGS=20V,VDS=0V | 100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VDS=VGS,ID=250A | 2 | 3 | 4 | V |
| Drain-Source On-State Resistance | RDS(ON) | VGS=10V, ID=30A | 9.1 | 11.5 | m | |
| Forward Transconductance | gFS | VDS=25V,ID=30A | 20 | S | ||
| Input Capacitance | Clss | 2350 | PF | |||
| Output Capacitance | Coss | 237 | PF | |||
| Reverse Transfer Capacitance | Crss | VDS=25V,VGS=0V, F=1.0MHz | 205 | PF | ||
| Turn-on Delay Time | td(on) | 16 | nS | |||
| Turn-on Rise Time | tr | 10 | nS | |||
| Turn-Off Delay Time | td(off) | 45 | nS | |||
| Turn-Off Fall Time | tf | VDD=30V,ID=2A,RL=15, VGS=10V,RG=2.5 | 12 | nS | ||
| Total Gate Charge | Qg | 50 | nC | |||
| Gate-Source Charge | Qgs | 12 | nC | |||
| Gate-Drain Charge | Qg d | VDS=30V,ID=30A, VGS=10V | 16 | nC | ||
| Diode Forward Voltage | VSD | VGS=0V,IS=30A | 1.2 | V | ||
| Diode Forward Current | IS | Note 2 | 60 | A | ||
| Reverse Recovery Time | trr | 28 | nS | |||
| Reverse Recovery Charge | Qrr | TJ = 25C, IF =60A, di/dt = 100A/s(Note3) | 49 | nC | ||
2412052036_Slkor-SL60N06_C253903.pdf
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