Low voltage N channel MOSFET XCH GSW25N65EF Multi EPI Super Junction for power conversion solutions
Product Overview
The GSW/GSA25N65EF is a low voltage N-channel Multi-EPI Super-Junction power MOSFET from XCH Semiconductor. It features advanced technology for enhanced characteristics such as fast switching times, low Ciss and Crss, low on-resistance, and excellent avalanche characteristics. This MOSFET is designed for applications requiring high efficiency and reliability.
Product Attributes
- Brand: XCH Semiconductor
- Series: Multi-EPI Super-Junction
- Channel Type: N-channel
- Technology: Multi-EPI Super-Junction
Technical Specifications
| Model | PKG | VDSS (V) | ID (A) | IDM (A) | VGSS (V) | EAS (mJ) | IAR (A) | EAR (mJ) | dv/dt (V/ns) | PD (W) | TJ, TSTG (C) | RJC (C/W) | BVDSS (V) | IDSS (A) | IGSS (nA) | VGS(th) (V) | RDS(on) () | gFS (S) | Ciss (pF) | Coss (pF) | Crss (pF) | td(on) (ns) | tr (ns) | td(off) (ns) | tf (ns) | Qg (nC) | Qgs (nC) | Qgd (nC) | IS (A) | ISM (A) | VSD (V) | trr (ns) | Qrr (C) |
| GSW25N65EF | TO-247 | 650 | 25* (TC=25), 15* (TC=100) | 53 | 30 | 500 | 4 | 1.2 | 15 | 210 | -55 to +150 | 0.58 | 650 (TJ=25), 700 (TJ=150) | 1 (TJ=150) | 100 | 2-4 | 0.14 (VGS=10V, ID=12A) | 16 (VDS=40V, ID=12A) | 1650 | 90 | 9 | 28 | 19 | 140 | 12 | 110-140 | 9 | 15 | 25 | 75 | 0.9-1.5 (IS=12A) | 190 (IS=12A, dIF/dt=100A/s) | 6 |
| GSA25N65EF | TO-220F | 650 | 25* (TC=25), 15* (TC=100) | 53 | 30 | 500 | 4 | 1.2 | 15 | 35 | -55 to +150 | 3.7 | 650 (TJ=25), 700 (TJ=150) | 1 (TJ=150) | 100 | 2-4 | 0.14 (VGS=10V, ID=12A) | 16 (VDS=40V, ID=12A) | 1650 | 90 | 9 | 28 | 19 | 140 | 12 | 110-140 | 9 | 15 | 25 | 75 | 0.9-1.5 (IS=12A) | 190 (IS=12A, dIF/dt=100A/s) | 6 |
2303201000_XCH-GSW25N65EF_C5375287.pdf
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