Low voltage N channel MOSFET XCH GSW25N65EF Multi EPI Super Junction for power conversion solutions

Key Attributes
Model Number: GSW25N65EF
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
25A
Operating Temperature -:
-55℃~+150℃
RDS(on):
140mΩ@10V,12A
Gate Threshold Voltage (Vgs(th)):
4V
Reverse Transfer Capacitance (Crss@Vds):
9pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
1.65nF@25V
Pd - Power Dissipation:
210W
Gate Charge(Qg):
140nC@10V
Mfr. Part #:
GSW25N65EF
Package:
TO-247
Product Description

Product Overview

The GSW/GSA25N65EF is a low voltage N-channel Multi-EPI Super-Junction power MOSFET from XCH Semiconductor. It features advanced technology for enhanced characteristics such as fast switching times, low Ciss and Crss, low on-resistance, and excellent avalanche characteristics. This MOSFET is designed for applications requiring high efficiency and reliability.

Product Attributes

  • Brand: XCH Semiconductor
  • Series: Multi-EPI Super-Junction
  • Channel Type: N-channel
  • Technology: Multi-EPI Super-Junction

Technical Specifications

ModelPKGVDSS (V)ID (A)IDM (A)VGSS (V)EAS (mJ)IAR (A)EAR (mJ)dv/dt (V/ns)PD (W)TJ, TSTG (C)RJC (C/W)BVDSS (V)IDSS (A)IGSS (nA)VGS(th) (V)RDS(on) ()gFS (S)Ciss (pF)Coss (pF)Crss (pF)td(on) (ns)tr (ns)td(off) (ns)tf (ns)Qg (nC)Qgs (nC)Qgd (nC)IS (A)ISM (A)VSD (V)trr (ns)Qrr (C)
GSW25N65EFTO-24765025* (TC=25), 15* (TC=100)533050041.215210-55 to +1500.58650 (TJ=25), 700 (TJ=150)1 (TJ=150)1002-40.14 (VGS=10V, ID=12A)16 (VDS=40V, ID=12A)1650909281914012110-14091525750.9-1.5 (IS=12A)190 (IS=12A, dIF/dt=100A/s)6
GSA25N65EFTO-220F65025* (TC=25), 15* (TC=100)533050041.21535-55 to +1503.7650 (TJ=25), 700 (TJ=150)1 (TJ=150)1002-40.14 (VGS=10V, ID=12A)16 (VDS=40V, ID=12A)1650909281914012110-14091525750.9-1.5 (IS=12A)190 (IS=12A, dIF/dt=100A/s)6

2303201000_XCH-GSW25N65EF_C5375287.pdf

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