Switching amplifier NPN transistor YONGYUTAI 2N3904 epitaxial planar type with 100 milliamps collector current rating
Key Attributes
Model Number:
2N3904
Product Custom Attributes
Current - Collector Cutoff:
100nA
Emitter-Base Voltage(Vebo):
6V
DC Current Gain:
400@1mA,5V
Transition Frequency(fT):
300MHz
Vce Saturation(VCE(sat)):
300mV@50mA,5mA
Pd - Power Dissipation:
450mW
Current - Collector(Ic):
100mA
Collector - Emitter Voltage VCEO:
40V
Mfr. Part #:
2N3904
Package:
TO-92
Product Description
Product Overview
NPN silicon epitaxial planar transistor designed for switching and amplifier applications. It is recommended as a complementary type to the PNP transistor 2N3906. This transistor is also available in the SOT-23 case under the type designation MMBT3904.
Product Attributes
- Brand: Not specified
- Origin: Not specified
- Material: Plastic-Encapsulate
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Symbol | Parameter | Test Conditions | Min | Typ | Max | Unit |
| VCBO | Collector Base Voltage | 60 | V | |||
| VCEO | Collector Emitter Voltage | 40 | V | |||
| VEBO | Emitter Base Voltage | 6 | V | |||
| IC | Collector Current | 100 | mA | |||
| PC | Collector Power Dissipation | (Ta=25C) | 450 | mW | ||
| Tj | Junction Temperature | 150 | C | |||
| Tstg | Storage Temperature | -55 | ~ | +150 | C | |
| V(BR)CBO | Collector-base breakdown voltage | IC = 10A, IE = 0 | 60 | V | ||
| V(BR)CEO | Collector-emitter breakdown voltage | IC = 1mA, IB = 0 | 40 | V | ||
| V(BR)EBO | Emitter-base breakdown voltage | IE = 10A, IC = 0 | 6 | V | ||
| ICBO | Collector cut-off current | VCB = 60V, IE = 0 | 100 | nA | ||
| ICEO | Collector cut-off current | VCE = 40V, IB = 0 | 100 | nA | ||
| IEBO | Emitter cut-off current | VEB = 5V, IC = 0 | 100 | nA | ||
| hFE(1) | DC current gain | VCE = 5V, IC = 1mA | 100 | 400 | ||
| hFE(2) | DC current gain | VCE = 1V, IC = 10mA | 100 | |||
| hFE(3) | DC current gain | VCE = 1V, IC = 50mA | 60 | |||
| hFE(4) | DC current gain | VCE = 1V, IC = 100mA | 30 | |||
| VCE(sat) | Collector-emitter saturation voltage | IC = 50mA, IB = 5mA | 0.3 | V | ||
| VBE(sat) | Base-emitter saturation voltage | IC = 50mA, IB = 5mA | 0.95 | V | ||
| fT | Transition frequency | VCE=20V, IC=10mA, f=100MHz | 300 | MHz | ||
| td | Delay time | VCC = 3V, VBE = 0.5V, IC = 10mA, IB1 = 1mA | 35 | ns | ||
| tr | Rise time | 35 | ns | |||
| ts | Storage time | VCC = 3V, IC = 10mA IB1 = IB2 = 1mA | 200 | ns | ||
| tf | Fall time | 50 | ns |
2512301548_YONGYUTAI-2N3904_C50201828.pdf
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