NPN General Purpose Amplifier YANGJIE MMBT2222AT SOT523 Package RoHS Compliant Electronic Component
Key Attributes
Model Number:
MMBT2222AT
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
100nA
DC Current Gain:
75@10mA,10V
Transition Frequency(fT):
300MHz
Number:
1 NPN
Vce Saturation(VCE(sat)):
1V@500mA,50mA
Type:
NPN
Pd - Power Dissipation:
150mW
Current - Collector(Ic):
600mA
Collector - Emitter Voltage VCEO:
40V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
MMBT2222AT
Package:
SOT-523
Product Description
Product Overview
The MMBT2222AT is an NPN General Purpose Amplifier in a SOT-523 surface mount package, ideally suited for automatic insertion. It offers a moisture sensitivity level of 1 and meets UL-94 V-0 flammability rating, being halogen-free. This component is designed for general-purpose amplification applications.
Product Attributes
- Brand: Yangzhou Yangjie Electronic Technology Co., Ltd.
- Origin: Yangzhou
- Package: SOT-523
- Certifications: RoHS Compliant
Technical Specifications
| Item | Symbol | Unit | Conditions | Value |
| Collector-Emitter Voltage | VCEO | V | IC=10mAdc, IB=0 | 40 |
| Collector-Base Voltage | VCBO | V | IC=10uAdc, IE=0 | 75 |
| Emitter-Base Voltage | VEBO | V | IE=10uAdc, IC=0 | 6 |
| Collector Current | IC | mA | 600 | |
| Collector Power Dissipation | PC | mW | 150 | |
| Thermal Resistance Junction to Ambient | RJA | /W | 833 | |
| Operation Junction Temperature | TJ | -55 to +150 | ||
| Storage Temperature | TSTG | -55 to +150 | ||
| Collector-Emitter Voltage | VCEO | V | IC=10mAdc, IB=0 | 40 |
| Collector-Base Voltage | VCBO | V | IC=10uAdc, IE=0 | 75 |
| Emitter-Base Voltage | VEBO | V | IE=10uAdc, IC=0 | 6 |
| Collector-base Cut-off Current | ICBO | nA | VCB=70Vdc | 100 |
| Emitter-base cut-off current | IEBO | nA | VEB=3Vdc | 100 |
| Collector-emitter Cut-off Current | ICEX | nA | VCE=60Vdc,VEB=3Vdc | 10 |
| DC Current Gain | hFE | IC=0.1mAdc, VCE=10Vdc | 35 | |
| IC=1mAdc, VCE=10Vdc | 50 | |||
| IC=10mAdc, VCE=10Vdc | 75 | |||
| IC=150mAdc, VCE=10Vdc | 100 | |||
| IC=500mAdc, VCE=10Vdc | 300 | |||
| Collector-Emitter Saturation Voltage | VCE(sat) | V | IC=150mAdc, IB=15mAdc | 0.3 |
| IC=500mAdc, IB=50mAdc | 1 | |||
| Base-Emitter Saturation Voltage | VBE(sat) | V | IC=150mAdc, IB=15mAdc | 1.2 |
| IC=500mAdc, IB=50mAdc | 2 | |||
| Collector-base Output Capacitance | Cobo | pF | VCB=10Vdc, f=1.0MHz, IE=0 | 8 |
| Transition frequency | fT | MHz | IC=20mA, VCE=20V, f=100MHz | 300 |
| Delay Time | td | ns | VCC=30V,VBE=0.5V,IC=150mA, IB1=15mA | 10 |
| Rise Time | tr | ns | 25 | |
| Storage Time | ts | ns | VCC=30V,IC=150mA, IB1=IB2=15mA | 225 |
| Fall Time | tf | ns | 60 |
2408011042_YANGJIE-MMBT2222AT_C22468359.pdf
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