Slkor SL15T120FL

Key Attributes
Model Number: SL15T120FL
Product Custom Attributes
Td(off):
180ns
Pd - Power Dissipation:
-
Operating Temperature:
-55℃~+150℃
Td(on):
80ns
Collector-Emitter Breakdown Voltage (Vces):
1.2kV
Reverse Transfer Capacitance (Cres):
50pF
IGBT Type:
FS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
4.5V@600uA
Gate Charge(Qg):
70nC@15V
Reverse Recovery Time(trr):
200ns
Switching Energy(Eoff):
1.1mJ
Turn-On Energy (Eon):
2.2mJ
Input Capacitance(Cies):
1.03nF
Pulsed Current- Forward(Ifm):
40A
Output Capacitance(Coes):
80pF
Mfr. Part #:
SL15T120FL
Package:
TO-247
Product Description

Product Overview

The SL15T120FL/K is a high-performance power semiconductor device featuring FS Technology and low gate charge. It is designed for general-purpose inverters, induction heating (IH), and UPS applications. Key features include a typical saturation voltage (VCE(sat)) of 2.2V at IC=15A and TC=25C, and it is a ROHS compliant product.

Brand

SLKORMicro

Technology

FS Technology

Certifications

ROHS

Package Types

TO-247, TO-263

Parameter Symbol Test Conditions Min Typ Max Unit
Collector-Emitter Voltage BVces Ic=500uA, Vee=0V 1200 V
Zero Gate Voltage Collector Current Ices Vce=1200V, Vee=0V, Tc=25C 0.102 mA
Collector Current (Leakage) Tc=100C 2 mA
Gate-Body Leakage Current (Reverse) I GSS Vee=0V, Vee=-20V -100 nA
Gate-Emitter Threshold Voltage VGE(th) VCE=VGE, Ic=600uA 45 - 85 V
Short Collector Current Icsc Vee=15V, Vce=600V, Tsc<10uS,Tc=25C 80 A
Collector-Emitter Saturation Voltage VCE(sat) Tc=25C 1.22 1.25 V
Collector-Emitter Saturation Voltage VCE(sat) Tc=125C 2.4 V
Collector-Emitter Saturation Voltage VCE(sat) Tc=150C 2.5 V
Input Capacitance Cies 1030 1800 pF
Output Capacitance Coes VCE=25V, VGE=0V, f=1.0MHz 80 120 pF
Reverse Transfer Capacitance Cres 50 100 pF
Total Gate Charge Qg VCC=600V, IC=15A, VGE=15V 34 70 nC
Turn-On Delay Time td(on) Vee=15V, Ic=15A, Vce=600V, Re=10, Inductive Load, Tc=25C 80 ns
Turn-On Rise Time tr 65 ns
Turn-Off Delay Time td(off) 180 ns
Turn-Off Fall Time tf 180 ns
Turn-on Energy Eon 122 mJ
Turn-off Energy Eoff 11 mJ
Total Switching Energy Etot 132 mJ
Diode Forward Voltage Ve Vee=0V, Ir=15A 1.18 2.9 V
Diode Reverse Recovery Time trr Vee=0V, Vr=800V, IF=15A 200 ns
Diode Reverse Recovery Charge Qrr dlf/dt=750A/us - -
Parameter Symbol Value Unit
Collector-Emitter Voltage Vces 1200 V
Collector Current-continuous Ic 30 (Tc=25C), 15 (Tc=100C) A
Collector Current-pulse (note 1) Icm 40 A
Diode Continuous Forward Current IF 15 (Tc=100C) A
Diode Maximum Forward Current (Note 1) IFM 40 A
Gate-Emitter Voltage Vees 30 V
Power Dissipation (TO-247) Po 125 (Tc=25C) W
Power Dissipation (TO-263) Po 182 (Tc=25C) W
Operating Temperature Range Tj -55~+150 C
Storage Temperature Range Tstg -55~+150 C
Maximum Lead Temperature for Soldering TL 300 C
Parameter Symbol Max Unit
Thermal Resistance, Junction to Case RthJC 2.0 (TO-247), 0.82 (TO-263) C/W
Thermal Resistance, Junction to Ambient RthJA 48 (TO-247), 62.5 (TO-263) C/W

2409302302_Slkor-SL15T120FL_C5632302.pdf
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