Power MOSFET Slkor SL160N03R with 160A Continuous Drain Current and High Energy Pulse Resistance
Key Attributes
Model Number:
SL160N03R
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
160A
Operating Temperature -:
-55℃~+150℃
RDS(on):
-
Gate Threshold Voltage (Vgs(th)):
2.2V
Reverse Transfer Capacitance (Crss@Vds):
838pF@30V
Number:
1 N-channel
Pd - Power Dissipation:
50W
Input Capacitance(Ciss):
-
Gate Charge(Qg):
142nC@10V
Mfr. Part #:
SL160N03R
Package:
PDFN5x6-8L
Product Description
Product Overview
This Power MOSFET utilizes advanced TRENCH technology to minimize conduction loss, enhance switching performance, and provide superior resistance to high energy pulses in avalanche and commutation modes. It is designed for applications requiring efficient power management, including PWM applications, load switching, and general power management tasks.
Product Attributes
- Certifications: 100% avalanche tested, 100% UIS TESTED!, 100% Vds TESTED!
Technical Specifications
| Parameter | Symbol | Value | Unit | Test Condition |
| Drain-source Voltage | VDS | 30 | V | |
| Gate-source Voltage | VGS | ±20 | V | |
| Continuous Drain Current | ID | 160 | A | TC=25°C |
| Continuous Drain Current | ID | 104 | A | TC=100°C |
| Pulsed Drain Current | IDM | 640 | A | TC=25°C, Tp Limited By Tjmax (note1) |
| Maximum Power Dissipation | PD | 50 | W | TC=25°C |
| Avalanche energy, single Pulse | EAS | 870 | mJ | L=0.5mH (note2) |
| Peak Diode Recovery dv/dt | dv/dt | 4.5 | V/ns | (note3) |
| Drain-source breakdown voltage | BVDSS | 30 | V | VGS=0V, ID=250µA |
| Zero gate voltage drain current | IDSS | 1 | µA | VDS=30V, VGS=0V |
| Zero gate voltage drain current | IDSS | 50 | µA | VDS=24V, TC =125°C |
| Gate-source leakage current | IGSS | ±100 | nA | VGS=±20V, VDS=0V |
| Gate threshold voltage | VGS(th) | 1.0 - 2.2 | V | VDS=VGS, ID=250µA |
| Drain-source on-state resistance | RDS(on) | 1.5 - 2.0 | mΩ | VGS=10V, ID=20A |
| Input Capacitance | Ciss | 7710 | PF | VGS=0V, VDS=30V, f=1.0MHz |
| Output Capacitance | Coss | 845 | PF | VGS=0V, VDS=30V, f=1.0MHz |
| Reverse Transfer Capacitance | Crss | 838 | PF | VGS=0V, VDS=30V, f=1.0MHz |
| Turn-on delay time | td(on) | 18 | nS | VGS=10V, VDS=30V, ID=30A, RG=25Ω |
| Turn-on Rise time | tr | 10 | nS | VGS=10V, VDS=30V, ID=30A, RG=25Ω |
| Turn-off delay time | td(off) | 64 | nS | VGS=10V, VDS=30V, ID=30A, RG=25Ω |
| Turn-off Fall time | tf | 16 | nS | VGS=10V, VDS=30V, ID=30A, RG=25Ω |
| Gate Total Charge | QG | 142 | nC | VGS=10V, VDS=30V, ID=30A |
| Gate-Source Charge | QgS | 92 | nC | VGS=10V, VDS=30V, ID=30A |
| Gate-Drain Charge | QgD | 18 | nC | VGS=10V, VDS=30V, ID=30A |
| Body Diode Forward Voltage | VSD | 1.2 | V | VGS=0V, ISD=20A, TJ =25°C |
| Body Diode Forward Current | Is | 160 | A | |
| Body Diode Reverse Recovery Time | Trr | 30 | ns | TJ=25°C, ISD=20A, VGS=0V, di/dt =100A/μs |
| Body Diode Reverse Recovery Charge | Qrr | 22 | nC | TJ=25°C, ISD=20A, VGS=0V, di/dt =100A/μs |
2305261759_Slkor-SL160N03R_C6800613.pdf
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