AEC Q101 Certified PNP Bipolar Transistor TOSHIBA 2SA1832-GR LF for Low Frequency Amplifier Circuits
Key Attributes
Model Number:
2SA1832-GR,LF
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
DC Current Gain:
70@2mA,6V
Transition Frequency(fT):
80MHz
Vce Saturation(VCE(sat)):
100mV
Type:
PNP
Pd - Power Dissipation:
120mW
Current - Collector(Ic):
150mA
Collector - Emitter Voltage VCEO:
50V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
2SA1832-GR,LF
Package:
SC-75(SOT-416)
Product Description
Product Overview
The 2SA1832 is a silicon PNP epitaxial bipolar transistor designed for low-frequency amplifier applications. It offers high voltage (VCEO = -50 V) and high collector current (IC = -150 mA max) capabilities, along with excellent hFE linearity. This transistor is AEC-Q101 qualified and is complementary to the 2SC4738, available in a small SSM package.
Product Attributes
- Brand: Toshiba
- Certifications: AEC-Q101 qualified
- Complementary to: 2SC4738
- Package Type: SSM
Technical Specifications
| Orderable Part Number | AEC-Q101 | Usage |
| 2SA1832-O | YES | General Use |
| 2SA1832-Y | YES | General Use |
| 2SA1832-GR | YES | General Use |
| 2SA1832-O,LF | YES | General Use |
| 2SA1832-O,LXGF | YES | Unintended Use |
| 2SA1832-O,LXHF | YES | Automotive Use |
| 2SA1832-Y,LF | YES | General Use |
| 2SA1832-Y,LXGF | YES | Unintended Use |
| 2SA1832-Y,LXHF | YES | Automotive Use |
| 2SA1832-GR,LF | YES | General Use |
| 2SA1832-GR,LXGF | YES | Unintended Use |
| 2SA1832-GR,LXHF | YES | Automotive Use |
| Characteristics | Symbol | Rating | Unit | Test Condition |
| Collector-base voltage | VCBO | -50 | V | |
| Collector-emitter voltage | VCEO | -50 | V | |
| Emitter-base voltage | VEBO | -5 | V | |
| Collector current (DC) | IC | -150 | mA | (Note 2), (Note 4) |
| Base current | IB | -30 | mA | (Note 3) |
| Collector power dissipation | PC | 120 | mW | (Note 2) |
| Collector power dissipation | PC | 80 | mW | (Note 3) |
| Junction temperature | Tj | 150 | °C | (Note 2), (Note 4) |
| Storage temperature | Tstg | -55 to 150 | °C | |
| Collector cut-off current | ICBO | -0.1 | µA | VCB = -50 V, IE = 0 A |
| Emitter cut-off current | IEBO | -0.1 | µA | VEB = -5 V, IC = 0 mA |
| DC current gain | hFE | 70 to 400 | VCE = -6 V, IC = -2 mA | |
| Collector-emitter saturation voltage | VCE(sat) | -0.3 | V | IC = -100 mA, IB = -10 mA |
| Transition frequency | fT | 80 | MHz | VCE = -10 V, IC = -1 mA |
| Collector output capacitance | Cob | 7 | pF | VCB = -10 V, IE = 0 A, f = 1 MHz |
2411220536_TOSHIBA-2SA1832-GR-LF_C5486909.pdf
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