Bipolar Transistor Arrays

TBD62783APG/FG/FNG/FWG 8-Channel Source Type DMOS Transistor ArrayThe TBD62783A series is an 8-circuit DMOS transistor array featuring built-in clamp diodes for switching inductive loads. This series is designed for high voltage and high current applications, offering reliable performance for various driving needs.Product AttributesBrand: TOSHIBAOrigin: Silicon MonolithicMaterial: DMOS Transistor ArrayTechnical SpecificationsModelPackageMax Output Voltage (VOUT)Max Output

Product OverviewThe UTC 2SA733 is a PNP epitaxial silicon transistor designed for low-frequency amplifier applications. It offers high hFE linearity and is the complementary counterpart to the 2SC945 transistor. This device is suitable for general-purpose amplification.Product AttributesBrand: UNISONIC TECHNOLOGIES CO., LTDMaterial: SiliconType: PNP Epitaxial Silicon TransistorCertifications: Lead Free, Halogen FreeTechnical SpecificationsOrdering NumberPackagePin AssignmentC

Product OverviewThe RN2301 to RN2306 series are silicon PNP epitaxial bipolar transistors featuring built-in bias resistors (PCT Process). These transistors are designed for applications requiring reduced external component count, leading to smaller system size and simplified assembly. They are complementary to the RN1301 to RN1306 series and are AEC-Q101 qualified.Product AttributesBrand: ToshibaCertifications: AEC-Q101 qualifiedTechnical SpecificationsPart NumberApplication

Product OverviewThe RN2307 to RN2309 series are silicon PNP epitaxial bipolar transistors featuring integrated bias resistors. These transistors are designed for switching, inverter circuits, interfacing, and driver circuits. The built-in bias resistor simplifies circuit design by reducing the need for external components, leading to smaller system size and faster assembly times. Toshiba offers a range of resistance values to suit various applications.Product AttributesBrand:

Product OverviewThe HN1B04FU is a silicon bipolar epitaxial transistor designed for low-frequency amplifier applications. It offers high voltage (VCEO = 50 V for Q1, -50 V for Q2) and high collector current (IC = 150 mA max) capabilities, along with excellent hFE linearity. This device is AEC-Q101 qualified, making it suitable for automotive applications.Product AttributesBrand: ToshibaType: Silicon PNP/NPN Epitaxial TransistorCertifications: AEC-Q101 qualifiedTechnical

2SC4116 Bipolar TransistorThe 2SC4116 is a silicon NPN epitaxial transistor designed for low-frequency amplification, audio frequency general purpose amplification, and AM amplifier applications. It offers high voltage (VCEO = 50 V), high collector current (IC = 150 mA max), and excellent hFE linearity. This transistor is AEC-Q101 qualified and is complementary to the 2SA1586.Product AttributesBrand: ToshibaType: Silicon NPN Epitaxial TransistorCertifications: AEC-Q101

Product OverviewThe RN1701JE~RN1706JE series are silicon NPN epitaxial transistors featuring a built-in bias resistor, designed for switching, inverter, interface, and driver circuit applications. These devices are housed in an extreme-super-mini 5-pin package, offering reduced parts count and lower assembly costs for more compact equipment. A wide range of resistor values is available to suit various circuit designs. These transistors are complementary to the RN2701JE to

Product OverviewThe ULN2002D is a monolithic integrated high voltage, high current Darlington array IC featuring five independent Darlington drive channels. It includes a built-in freewheeling diode for driving inductive loads like relays and stepping motors. Each single Darlington tube collector can output 500 mA, with parallel connection for higher current capacity. This IC is widely used in relay drive, indicator light drive, display screen drive (LED), stepping motor

Product OverviewThe RN1301~RN1306 series are Silicon NPN Epitaxial Transistors utilizing a PCT Process. These transistors are designed for switching, inverter circuit, interface circuit, and driver circuit applications. Key advantages include built-in bias resistors, which simplify circuit design and reduce the quantity of parts and manufacturing process. They are complementary to the RN2301 to RN2306 series.Product AttributesBrand: TOSHIBAType: Silicon NPN Epitaxial Type

2SC2712 Bipolar TransistorThe 2SC2712 is a silicon NPN epitaxial transistor designed for low-frequency and general-purpose audio frequency amplifier applications, including AM amplifiers. It offers high voltage (VCEO = 50 V), high collector current (IC = 150 mA max), and excellent hFE linearity. The transistor is AEC-Q101 qualified and complementary to the 2SA1162.Product AttributesBrand: ToshibaType: Silicon NPN Epitaxial TransistorCertifications: AEC-Q101 qualifiedPackaging

Product OverviewThe TOSHIBA 2SA1182 is a silicon PNP epitaxial transistor manufactured using the PCT process. It is designed for audio frequency low power amplifier applications, driver stage amplifier applications, and switching applications. This device is AEC-Q101 Qualified and features excellent hFE linearity, with a minimum hFE (2) of 25 at VCE = -6 V and IC = -400 mA. It is complementary to the 2SC2859.Product AttributesBrand: TOSHIBAType: Silicon PNP Epitaxial

Product OverviewThe TOSHIBA HN4C06J is a Silicon NPN Epitaxial Type transistor utilizing the PCT Process, designed for general-purpose audio frequency amplifier applications. It offers high voltage capability (VCEO = 120V), high and linear DC current gain (hFE), low noise (NF = 1dB typ.), making it suitable for demanding audio circuits.Product AttributesBrand: TOSHIBAMaterial: Silicon NPN Epitaxial Type (PCT Process)Applications: Audio Frequency General Purpose AmplifierTechn

Product OverviewThe Toshiba RN1421 to RN1427 series are NPN epitaxial silicon transistors featuring built-in bias resistors, designed for switching, inverter, interface, and driver circuit applications. These high-current type transistors (IC max = 800 mA) simplify circuit design by reducing component count and manufacturing processes, offering low VCE(sat) and a complementary series RN2421 to RN2427.Product AttributesBrand: TOSHIBAType: Silicon NPN Epitaxial Type (PCT

Product OverviewThe 2SA1586 is a silicon PNP epitaxial bipolar transistor designed for low-frequency and general-purpose audio frequency amplifier applications. It offers high voltage, high collector current, and excellent hFE linearity, making it a versatile component for various electronic designs. This transistor is AEC-Q101 qualified and is complementary to the 2SC4116.Product AttributesBrand: ToshibaCertifications: AEC-Q101 qualifiedPackage: USMTechnical SpecificationsOr

Product Overview The 2SC2881 is an NPN Silicon Transistor from Unisonic Technologies Co., Ltd, designed for voltage amplifier and power amplifier applications. It features high voltage capability (VCEO=120V) and a high transition frequency (fT=120MHz typ.). It is complementary to the 2SA1201 transistor. Product Attributes Brand: UNISONIC TECHNOLOGIES CO., LTD Material: Silicon Type: NPN Transistor Certifications: Lead Free, Halogen Free Technical Specifications Ordering

Product OverviewThe UNISONIC TECHNOLOGIES CO., LTD 2SB649/A is a PNP Silicon Transistor designed for general-purpose power applications. It is particularly suited as a complementary pair with the UTC 2SD669/A for low-frequency power amplifiers.Product AttributesBrand: UNISONIC TECHNOLOGIES CO., LTDMaterial: SiliconCertifications: Lead Free, Halogen FreeTechnical SpecificationsParameterSymbol2SB6492SB649AUnitConditionsCollector-Base VoltageVCBO-180VCollector-Emitter VoltageVCE

Product OverviewThe TOSHIBA 2SC5810 is a silicon NPN epitaxial transistor designed for high-speed switching applications. It is suitable for DC-DC converters and strobe applications, offering high DC current gain (hFE = 400 to 1000), low collector-emitter saturation voltage (VCE (sat) = 0.17 V max), and fast switching speeds (tf = 85 ns typ.).Product AttributesBrand: TOSHIBAType: Silicon NPN Epitaxial TransistorOrigin: Japan (implied by TOSHIBA)Certifications: RoHS COMPATIBLE

Product OverviewThe TBD62003A and TBD62004A series are 7-channel sink-type DMOS transistor arrays designed for switching inductive loads. Each output includes a built-in clamp diode for protection. These devices offer high voltage (up to 50V) and high current (up to 500mA/ch) capabilities, making them suitable for various applications requiring robust output driving.Product AttributesBrand: TOSHIBAMaterial: Silicon Monolithic (BiCD Integrated Circuit)Technical SpecificationsS

Product OverviewThe UTC UB1580 is a PNP Darlington transistor designed for general purpose amplifier and low speed switching applications. It offers a high Collector-Emitter Voltage (VCEO) of -150V and a Collector Dissipation (PC MAX) of 600mW. Key advantages include low collector-emitter saturation voltage.Product AttributesBrand: UNISONIC TECHNOLOGIES CO., LTDProduct Name: UB1580Type: PNP EPITAXIAL PLANAR TRANSISTORCertifications: Lead Free, Halogen FreeTechnical Specificat

Product OverviewThe RN1301 to RN1306 series are Silicon NPN Epitaxial Type bipolar transistors featuring an integrated bias resistor, utilizing the PCT Process. These transistors are designed for switching, inverter circuits, interfacing, and driver circuits. The built-in bias resistor simplifies circuit design by reducing the need for external components, leading to smaller system sizes and faster assembly times. Toshiba offers a range of resistance values to suit various