Bipolar Transistor Arrays
TOSHIBA TBD62783AFWGZ EHZ 8 Channel DMOS Transistor Array for Industrial Switching Applications
TBD62783APG/FG/FNG/FWG 8-Channel Source Type DMOS Transistor ArrayThe TBD62783A series is an 8-circuit DMOS transistor array featuring built-in clamp diodes for switching inductive loads. This series is designed for high voltage and high current applications, offering reliable performance for ...
PNP epitaxial silicon transistor UTC 2SA733G-P-AE3-R suitable for low frequency amplifier applications
Product OverviewThe UTC 2SA733 is a PNP epitaxial silicon transistor designed for low-frequency amplifier applications. It offers high hFE linearity and is the complementary counterpart to the 2SC945 transistor. This device is suitable for general-purpose amplification.Product AttributesBrand: ...
TOSHIBA RN2303 TE85L F PNP Epitaxial Transistor for in Switching Inverter and Driver Circuit Designs
Product OverviewThe RN2301 to RN2306 series are silicon PNP epitaxial bipolar transistors featuring built-in bias resistors (PCT Process). These transistors are designed for applications requiring reduced external component count, leading to smaller system size and simplified assembly. They are ...
Integrated Bias Resistor Silicon PNP Bipolar Transistor TOSHIBA RN2309 TE85L F for Switching Circuits
Product OverviewThe RN2307 to RN2309 series are silicon PNP epitaxial bipolar transistors featuring integrated bias resistors. These transistors are designed for switching, inverter circuits, interfacing, and driver circuits. The built-in bias resistor simplifies circuit design by reducing the need ...
Silicon bipolar epitaxial transistor TOSHIBA HN1B04FU-YLF with 150 milliamp collector current and 50 volt rating
Product OverviewThe HN1B04FU is a silicon bipolar epitaxial transistor designed for low-frequency amplifier applications. It offers high voltage (VCEO = 50 V for Q1, -50 V for Q2) and high collector current (IC = 150 mA max) capabilities, along with excellent hFE linearity. This device is AEC-Q101 ...
TOSHIBA 2SC4116-BL TE85L F Silicon NPN Transistor for Performance in Audio and AM Amplifier Circuits
2SC4116 Bipolar TransistorThe 2SC4116 is a silicon NPN epitaxial transistor designed for low-frequency amplification, audio frequency general purpose amplification, and AM amplifier applications. It offers high voltage (VCEO = 50 V), high collector current (IC = 150 mA max), and excellent hFE ...
TOSHIBA RN1703JE TE85L F Extreme Super Mini 5 Pin Silicon NPN Transistor for Low Parts Count Designs
Product OverviewThe RN1701JE~RN1706JE series are silicon NPN epitaxial transistors featuring a built-in bias resistor, designed for switching, inverter, interface, and driver circuit applications. These devices are housed in an extreme-super-mini 5-pin package, offering reduced parts count and lower ...
UMW ULN2002D UMW high voltage Darlington array IC for relay indicator light and stepping motor drive
Product OverviewThe ULN2002D is a monolithic integrated high voltage, high current Darlington array IC featuring five independent Darlington drive channels. It includes a built-in freewheeling diode for driving inductive loads like relays and stepping motors. Each single Darlington tube collector ...
Silicon NPN Epitaxial Transistor TOSHIBA RN1301 LF for Simplified Driver and Inverter Circuit Design
Product OverviewThe RN1301~RN1306 series are Silicon NPN Epitaxial Transistors utilizing a PCT Process. These transistors are designed for switching, inverter circuit, interface circuit, and driver circuit applications. Key advantages include built-in bias resistors, which simplify circuit design ...
Silicon NPN Epitaxial Transistor TOSHIBA 2SC2712-GR LXHF for Audio Frequency Amplifier Applications
2SC2712 Bipolar TransistorThe 2SC2712 is a silicon NPN epitaxial transistor designed for low-frequency and general-purpose audio frequency amplifier applications, including AM amplifiers. It offers high voltage (VCEO = 50 V), high collector current (IC = 150 mA max), and excellent hFE linearity. The ...
Audio Frequency Amplifier and Switching Transistor TOSHIBA 2SA1182-Y LF Silicon PNP Epitaxial Device
Product OverviewThe TOSHIBA 2SA1182 is a silicon PNP epitaxial transistor manufactured using the PCT process. It is designed for audio frequency low power amplifier applications, driver stage amplifier applications, and switching applications. This device is AEC-Q101 Qualified and features excellent ...
TOSHIBA HN4C06J-BL TE85L F Audio Frequency Amplifier Transistor Silicon NPN Epitaxial Type Component
Product OverviewThe TOSHIBA HN4C06J is a Silicon NPN Epitaxial Type transistor utilizing the PCT Process, designed for general-purpose audio frequency amplifier applications. It offers high voltage capability (VCEO = 120V), high and linear DC current gain (hFE), low noise (NF = 1dB typ.), making it ...
Silicon NPN Transistor TOSHIBA RN1426 TE85LF Designed for Switching and Inverter Circuit Applications
Product OverviewThe Toshiba RN1421 to RN1427 series are NPN epitaxial silicon transistors featuring built-in bias resistors, designed for switching, inverter, interface, and driver circuit applications. These high-current type transistors (IC max = 800 mA) simplify circuit design by reducing ...
TOSHIBA 2SA1586-Y LF Bipolar Transistor for High Collector Current and Audio Frequency Amplification
Product OverviewThe 2SA1586 is a silicon PNP epitaxial bipolar transistor designed for low-frequency and general-purpose audio frequency amplifier applications. It offers high voltage, high collector current, and excellent hFE linearity, making it a versatile component for various electronic designs...
Power Amplifier Voltage Amplifier Silicon NPN Transistor UTC 2SC2881G-Y-AB3-R with 120V VCEO and 120MHz fT
Product Overview The 2SC2881 is an NPN Silicon Transistor from Unisonic Technologies Co., Ltd, designed for voltage amplifier and power amplifier applications. It features high voltage capability (VCEO=120V) and a high transition frequency (fT=120MHz typ.). It is complementary to the 2SA1201 ...
Silicon PNP Transistor UTC 2SB649AG C TN3 R Suitable for Complementary Pair Amplifier Applications
Product OverviewThe UNISONIC TECHNOLOGIES CO., LTD 2SB649/A is a PNP Silicon Transistor designed for general-purpose power applications. It is particularly suited as a complementary pair with the UTC 2SD669/A for low-frequency power amplifiers.Product AttributesBrand: UNISONIC TECHNOLOGIES CO., ...
silicon NPN transistor TOSHIBA 2SC5810 TE12L F ideal for DC DC converter and fast switching circuits
Product OverviewThe TOSHIBA 2SC5810 is a silicon NPN epitaxial transistor designed for high-speed switching applications. It is suitable for DC-DC converters and strobe applications, offering high DC current gain (hFE = 400 to 1000), low collector-emitter saturation voltage (VCE (sat) = 0.17 V max), ...
TOSHIBA TBD62004AFNGZEL 7 channel transistor array featuring clamp diode for protection and robust driving
Product OverviewThe TBD62003A and TBD62004A series are 7-channel sink-type DMOS transistor arrays designed for switching inductive loads. Each output includes a built-in clamp diode for protection. These devices offer high voltage (up to 50V) and high current (up to 500mA/ch) capabilities, making ...
Low Saturation Voltage PNP Darlington Transistor UTC UB1580G-AB3-R Ideal for Amplifier and Switching
Product OverviewThe UTC UB1580 is a PNP Darlington transistor designed for general purpose amplifier and low speed switching applications. It offers a high Collector-Emitter Voltage (VCEO) of -150V and a Collector Dissipation (PC MAX) of 600mW. Key advantages include low collector-emitter saturation ...
Silicon NPN Bipolar Transistor Featuring Integrated Bias Resistor TOSHIBA RN1306 LF for Circuit Assembly
Product OverviewThe RN1301 to RN1306 series are Silicon NPN Epitaxial Type bipolar transistors featuring an integrated bias resistor, utilizing the PCT Process. These transistors are designed for switching, inverter circuits, interfacing, and driver circuits. The built-in bias resistor simplifies ...
