Silicon bipolar epitaxial transistor TOSHIBA HN1B04FU-YLF with 150 milliamp collector current and 50 volt rating
Key Attributes
Model Number:
HN1B04FU-Y,LF
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
DC Current Gain:
400@2mA,6V
Transition Frequency(fT):
150MHz
Number:
1 NPN + 1 PNP
Vce Saturation(VCE(sat)):
250mV@100mA,10mA
Type:
NPN+PNP
Pd - Power Dissipation:
200mW
Current - Collector(Ic):
150mA
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
HN1B04FU-Y,LF
Package:
US6
Product Description
Product Overview
The HN1B04FU is a silicon bipolar epitaxial transistor designed for low-frequency amplifier applications. It offers high voltage (VCEO = 50 V for Q1, -50 V for Q2) and high collector current (IC = 150 mA max) capabilities, along with excellent hFE linearity. This device is AEC-Q101 qualified, making it suitable for automotive applications.
Product Attributes
- Brand: Toshiba
- Type: Silicon PNP/NPN Epitaxial Transistor
- Certifications: AEC-Q101 qualified
Technical Specifications
| Characteristic | Q1 Rating | Q2 Rating | Unit |
| Collector-base voltage (VCBO) | 60 | -50 | V |
| Collector-emitter voltage (VCEO) | 50 | -50 | V |
| Emitter-base voltage (VEBO) | 5 | -5 | V |
| Collector current (IC) | 150 (max) | -150 (max) | mA |
| Base current (IB) | 30 | -30 | mA |
| Collector power dissipation (PC) | 200 (Note 4) | mW | |
| Junction temperature (Tj) | 150 | C | |
| Storage temperature (Tstg) | -55 to 150 | C | |
| Collector cut-off current (ICBO) | 0.1 (max) | -0.1 (max) | A |
| Emitter cut-off current (IEBO) | 0.1 (max) | -0.1 (max) | A |
| DC current gain (hFE) | 120 to 400 | 120 to 400 | |
| Collector-emitter saturation voltage (VCE(sat)) | 0.25 (max) | -0.3 (max) | V |
| Transition frequency (fT) | 150 (typ.) | 120 (typ.) | MHz |
| Collector output capacitance (Cob) | 0.1 (max) | 0.1 (max) | pF |
2404241417_TOSHIBA-HN1B04FU-Y-LF_C7498461.pdf
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