N Channel Enhancement Mode MOSFET YANGJIE YJG130G04CQ Ideal for Power Switching and DC DC Conversion
Key Attributes
Model Number:
YJG130G04CQ
Product Custom Attributes
Drain To Source Voltage:
40V
Configuration:
-
Current - Continuous Drain(Id):
130A
Operating Temperature -:
-55℃~+175℃
RDS(on):
2.8mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
70pF@25V
Number:
1 N-channel
Output Capacitance(Coss):
1.34nF
Input Capacitance(Ciss):
7.4nF@25V
Pd - Power Dissipation:
150W
Gate Charge(Qg):
129nC@10V
Mfr. Part #:
YJG130G04CQ
Package:
PDFN5060-8L
Product Description
Product Overview
The YJG130G04CQ is an N-Channel Enhancement Mode Field Effect Transistor from Yangzhou Yangjie Electronic Technology Co., Ltd. It features split gate trench MOSFET technology, a high-density cell design for low RDS(ON), and an excellent package for heat dissipation. This transistor is designed for power switching applications, uninterruptible power supplies, and DC-DC converters. It is AEC-Q101 qualified and meets UL 94 V-0 flammability rating.
Product Attributes
- Brand: Yangzhou Yangjie Electronic Technology Co., Ltd.
- Part Number: YJG130G04CQ
- Technology: Split gate trench MOSFET
- Moisture Sensitivity Level: 1
- Flammability Rating: UL 94 V-0
- Certifications: AEC-Q101 qualified (suffix "Q"), RoHS compliant
- Origin: China (implied by company location)
Technical Specifications
| Parameter | Symbol | Conditions | Min | Typ | Max | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-source Voltage | VDS | 40 | V | |||
| Gate-source Voltage | VGS | ±20 | V | |||
| Drain Current | ID | TA=25 | 20 | A | ||
| Drain Current | ID | TA=100 | 12 | A | ||
| Drain Current | ID | TC=25 | 130 | A | ||
| Drain Current | ID | TC=100 | 90 | A | ||
| Pulsed Drain Current | IDM | 450 | A | |||
| Avalanche energy | EAS | TJ=25, VDD=30V, VG=10V, RG=25, L=3mH, IAS=21A | 661 | mJ | ||
| Total Power Dissipation | PD | TA=25 | 2.5 | W | ||
| Total Power Dissipation | PD | TA=100 | 1 | W | ||
| Total Power Dissipation | PD | TC=25 | 150 | W | ||
| Total Power Dissipation | PD | TC=100 | 50 | W | ||
| Junction and Storage Temperature Range | TJ ,TSTG | -55 | +175 | |||
| Thermal Resistance | ||||||
| Thermal Resistance Junction-to-Ambient | RθJA | Steady-State | 40 | 50 | /W | |
| Thermal Resistance Junction-to-Case | RθJC | Steady-State | 0.8 | 1 | /W | |
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS= 0V, ID=250μA | 40 | - | - | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=40V, VGS=0V | - | 1 | μA | |
| Zero Gate Voltage Drain Current | IDSS | VDS=40V, VGS=0V, Tj=175 | - | 500 | μA | |
| Gate-Body Leakage Current | IGSS | VGS= ±20V, VDS=0V | - | ±100 | nA | |
| Gate Threshold Voltage | VGS(th) | VDS= VGS, ID=250μA | 1.2 | 1.8 | 2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V, ID=20A | 1.5 | 1.9 | mΩ | |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=4.5V, ID=20A | 2.0 | 2.8 | mΩ | |
| Diode Forward Voltage | VSD | IS=20A, VGS=0V | 0.8 | 1.2 | V | |
| Gate resistance | RG | f=1MHz | 1.7 | - | Ω | |
| Maximum Body-Diode Continuous Current | IS | - | 130 | A | ||
| Dynamic Parameters | ||||||
| Input Capacitance | Ciss | VDS=25V, VGS=0V, f=1MHz | 7400 | - | pF | |
| Output Capacitance | Coss | 1340 | - | pF | ||
| Reverse Transfer Capacitance | Crss | 70 | - | pF | ||
| Switching Parameters | ||||||
| Total Gate Charge | Qg | VGS=10V, VDS=20V, ID=20A | 129 | - | nC | |
| Gate-Source Charge | Qgs | 18 | - | nC | ||
| Gate-Drain Charge | Qg | 32 | - | nC | ||
| Reverse Recovery Charge | Qrr | IF=20A, di/dt=100A/us | 120 | - | nC | |
| Reverse Recovery Time | trr | 73 | - | ns | ||
| Turn-on Delay Time | tD(on) | VGS=10V, VDD=20V, ID=20A RGEN=2.2 | 28 | - | ns | |
| Turn-on Rise Time | tr | 113 | - | ns | ||
| Turn-off Delay Time | tD(off) | 56 | - | ns | ||
| Turn-off fall Time | tf | 21 | - | ns | ||
2410301207_YANGJIE-YJG130G04CQ_C19631619.pdf
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