TOSHIBA HN4C06J-BL TE85L F Audio Frequency Amplifier Transistor Silicon NPN Epitaxial Type Component
Key Attributes
Model Number:
HN4C06J-BL(TE85L,F
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
DC Current Gain:
200@2mA,6V
Transition Frequency(fT):
100MHz
Vce Saturation(VCE(sat)):
300mV
Type:
NPN
Pd - Power Dissipation:
300mW
Current - Collector(Ic):
100mA
Collector - Emitter Voltage VCEO:
120V
Operating Temperature:
-
Mfr. Part #:
HN4C06J-BL(TE85L,F
Package:
SC-74A(SOT-753)
Product Description
Product Overview
The TOSHIBA HN4C06J is a Silicon NPN Epitaxial Type transistor utilizing the PCT Process, designed for general-purpose audio frequency amplifier applications. It offers high voltage capability (VCEO = 120V), high and linear DC current gain (hFE), low noise (NF = 1dB typ.), making it suitable for demanding audio circuits.
Product Attributes
- Brand: TOSHIBA
- Material: Silicon NPN Epitaxial Type (PCT Process)
- Applications: Audio Frequency General Purpose Amplifier
Technical Specifications
| Characteristic | Symbol | Test Condition | Min | Typ. | Max | Unit |
|---|---|---|---|---|---|---|
| Collector cut-off current | ICBO | VCB = 120V, IE = 0 | 0.1 | A | ||
| Emitter cut-off current | IEBO | VEB = 5V, IC = 0 | 0.1 | A | ||
| DC current gain | hFE | VCE = 6V, IC = 2mA | 200 | 700 | ||
| Collector-emitter saturation voltage | VCE (sat) | IC = 10mA, IB = 1mA | 0.3 | V | ||
| Transition frequency | fT | VCE = 6V, IC = 1mA | 100 | MHz | ||
| Collector output capacitance | Cob | VCB = 10V, IE = 0, f = 1MHz | 3.0 | pF | ||
| Noise figure | NF | VCE = 6 V, IC = 0.1 mA, f = 1 kHz, RG = 10 k | 1.0 | dB |
Absolute Maximum Ratings
| Characteristic | Symbol | Rating | Unit |
|---|---|---|---|
| Collector-base voltage | VCBO | 120 | V |
| Collector-emitter voltage | VCEO | 120 | V |
| Emitter-base voltage | VEBO | 5 | V |
| Collector current | IC | 100 | mA |
| Base current | IB | 20 | mA |
| Collector power dissipation | PC* | 300 | mW |
| Junction temperature | Tj | 150 | C |
| Storage temperature range | Tstg | 55 to 150 | C |
2504101957_TOSHIBA-HN4C06J-BL-TE85L-F_C17230471.pdf
Related Products
Low Reverse Leakage Current Schottky Diode ZHIDE SS54B for High Temperature Soldering Applications
Product OverviewThe SS52B-SS520B series are surface-mounted Schottky barrier rectifiers designed for high reliability applications. They feature low reverse leakage current, high forward surge capability, and are guaranteed for high-temperature soldering. These diodes are RoHS compliant and ...
400 watt LDMOS FET power amplifier Wolfspeed PXAE213708NB-V1-R2 for 2110 to 2180 MHz cellular applications
Product Overview The Wolfspeed PXAE213708NB is a 400-watt LDMOS FET designed for multi-standard cellular power amplifier applications within the 2110 to 2180 MHz frequency band. This device features broadband internal input and output matching, an asymmetrical Doherty design with distinct main and ...
Gallium Nitride Gan Hemts for Broadband Rf Applications Featuring Wolfspeed CGHV40050P Transistor
Product Overview The MACOM CGHV40050 is an unmatched Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) designed for general-purpose, broadband RF and microwave applications up to 4 GHz. Operating from a 50-volt rail, this device offers high efficiency, high gain, and wide bandwidth ...
YANGJIE MG400HF12MIC2 IGBT module featuring fast switching speeds and low stray inductance for power supplies
Product OverviewThe MG400HF12MIC2 is a high-power IGBT module designed for demanding applications. It features short circuit rating, low stray inductance, and low switching losses, with a VCE(sat) exhibiting a positive temperature coefficient for enhanced reliability. The module offers fast ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
