NPN transistor YTL MMBTH10 with 30V collector base breakdown voltage and 650MHz transition frequency
Product Overview
The MMBTH10 is an NPN transistor in a SOT-23 package, designed for general-purpose applications. It offers a breakdown voltage of 30V (V(BR)CBO) and 25V (V(BR)CEO), with a DC current gain (hFE) of 60 at 10V VCE and 4mA IC. Its low collector-emitter saturation voltage (VCE(sat)) of 0.5V and transition frequency (fT) of 650MHz make it suitable for various electronic circuits.
Product Attributes
- Package Type: SOT-23
- Transistor Type: NPN
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| Collector-base breakdown voltage | V(BR)CBO | IC=100A, IE=0 | 30 | V | ||
| Collector-emitter breakdown voltage | V(BR)CEO | IC=1mA, IB=0 | 25 | V | ||
| Emitter-base breakdown voltage | V(BR)EBO | IE=10A, IC=0 | 3 | V | ||
| Collector cut-off current | ICBO | VCB=25V, IE=0 | 0.1 | A | ||
| Emitter cut-off current | IEBO | VEB=2V, IC=0 | 0.1 | A | ||
| DC current gain | hFE | VCE=10V, IC=4mA | 60 | |||
| Collector-emitter saturation voltage | VCE(sat) | IC=4mA, IB=0.4mA | 0.5 | V | ||
| Base-emitter voltage | VBE | VCE=10V, IC=4mA | 0.95 | V | ||
| Transition frequency | fT | VCE=10V, IC=4mA f=100MHz | 650 | MHz | ||
| Collector output capacitance | Cob | VCB=10V, IE=0, f=1MHz | 0.7 | pF |
Maximum Ratings
| Symbol | Parameter | Value | Unit |
| VCBO | Collector-Base Voltage | 30 | V |
| VCEO | Collector-Emitter Voltage | 25 | V |
| VEBO | Emitter-Base Voltage | 3 | V |
| IC | Collector Current | 50 | mA |
| PC | Collector Power Dissipation | 225 | mW |
| RJA | Thermal Resistance From Junction To Ambient | 556 | /W |
| Tj | Junction Temperature | 150 | |
| Tstg | Storage Temperature | -55+150 |
Soldering Footprint (SOT-23)
| Dim | Min | Max | Typical | Unit |
| A | 2.70 | 3.10 | ||
| B | 1.10 | 1.50 | ||
| C | 1.0 | |||
| D | 0.4 | |||
| E | 0.35 | 0.48 | ||
| G | 1.80 | 2.00 | ||
| H | 0.02 | 0.10 | ||
| J | 0.1 | |||
| K | 2.20 | 2.60 |
2511281600_YTL-MMBTH10_C53059515.pdf
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