NPN transistor YTL MMBTH10 with 30V collector base breakdown voltage and 650MHz transition frequency

Key Attributes
Model Number: MMBTH10
Product Custom Attributes
Mfr. Part #:
MMBTH10
Package:
SOT-23
Product Description

Product Overview

The MMBTH10 is an NPN transistor in a SOT-23 package, designed for general-purpose applications. It offers a breakdown voltage of 30V (V(BR)CBO) and 25V (V(BR)CEO), with a DC current gain (hFE) of 60 at 10V VCE and 4mA IC. Its low collector-emitter saturation voltage (VCE(sat)) of 0.5V and transition frequency (fT) of 650MHz make it suitable for various electronic circuits.

Product Attributes

  • Package Type: SOT-23
  • Transistor Type: NPN

Technical Specifications

ParameterSymbolTest ConditionsMinTypMaxUnit
Collector-base breakdown voltageV(BR)CBOIC=100A, IE=030V
Collector-emitter breakdown voltageV(BR)CEOIC=1mA, IB=025V
Emitter-base breakdown voltageV(BR)EBOIE=10A, IC=03V
Collector cut-off currentICBOVCB=25V, IE=00.1A
Emitter cut-off currentIEBOVEB=2V, IC=00.1A
DC current gainhFEVCE=10V, IC=4mA60
Collector-emitter saturation voltageVCE(sat)IC=4mA, IB=0.4mA0.5V
Base-emitter voltageVBEVCE=10V, IC=4mA0.95V
Transition frequencyfTVCE=10V, IC=4mA f=100MHz650MHz
Collector output capacitanceCobVCB=10V, IE=0, f=1MHz0.7pF

Maximum Ratings

SymbolParameterValueUnit
VCBOCollector-Base Voltage30V
VCEOCollector-Emitter Voltage25V
VEBOEmitter-Base Voltage3V
ICCollector Current50mA
PCCollector Power Dissipation225mW
RJAThermal Resistance From Junction To Ambient556/W
TjJunction Temperature150
TstgStorage Temperature-55+150

Soldering Footprint (SOT-23)

DimMinMaxTypicalUnit
A2.703.10
B1.101.50
C1.0
D0.4
E0.350.48
G1.802.00
H0.020.10
J0.1
K2.202.60

2511281600_YTL-MMBTH10_C53059515.pdf

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