Silicon Carbide Power MOSFET YANGJIE YJD212040NCFG2 Designed for Fast Switching and High Temperature
Key Attributes
Model Number:
YJD212040NCFG2
Product Custom Attributes
Drain To Source Voltage:
1.2kV
Current - Continuous Drain(Id):
66A
Operating Temperature -:
-55℃~+175℃
RDS(on):
44mΩ
Gate Threshold Voltage (Vgs(th)):
4V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
7.2pF
Input Capacitance(Ciss):
3.456nF
Pd - Power Dissipation:
333W
Output Capacitance(Coss):
127pF
Gate Charge(Qg):
116nC
Mfr. Part #:
YJD212040NCFG2
Package:
TO-247-4L
Product Description
Product Overview
The YJD212040NCFG2 is a Silicon Carbide Power MOSFET (N-Channel Enhancement) designed for high-speed switching applications. It offers essentially no switching losses, reduced heat sink requirements, and a maximum working temperature of 175 C. Key features include high blocking voltage, a fast intrinsic diode with low recovery current, and suitability for high-frequency operation. This product is halogen-free and RoHS compliant.
Product Attributes
- Brand: Yangzhou Yangjie Electronic Technology Co., Ltd.
- Model: YJD212040NCFG2
- Origin: China
- Material: Silicon Carbide
- Certifications: RoHS COMPLIANT
Technical Specifications
| Parameter | Symbol | Unit | Value | Test Conditions | Note |
|---|---|---|---|---|---|
| Maximum Ratings | |||||
| Drain source voltage | VDS,max | V | 1200 | @ Tj=25C, VGS=0 V, ID=100uA | |
| Gate source voltage | VGS,max | V | -8/+19 | @ Tj=25C | Absolute maximum values |
| Gate source voltage | VGS,op | V | -4/+15 | @ Tj=25C | Recommended operational values |
| Continuous drain current | ID | A | 66 | VGS=15V, Tc=25 | Fig.18 |
| Continuous drain current | ID | A | 48 | VGS=15V, Tc=100 | |
| Pulsed drain current | ID(pulsed) | A | 120 | Pulse width tp limited by Tj,max | Fig.23 |
| Avalanche energy, Single Pulse | EAS | mJ | 500 | VDD=75V,L=10mH | |
| Power Dissipation | PTOT | W | 333 | Tc=25C , Tj = 175 | Fig.17 |
| Power Dissipation | PTOT | W | 144 | Tc=110C, Tj = 175 | |
| Operating junction and Storage temperature range | Tj ,Tstg | C | -55 to +175 | ||
| Soldering temperature | TL | C | 260 | 1.6mm (0.063) from case for 10s | |
| Mounting torque | TM | Nm | 0.6 | M3 screw | Maximum of mounting process: 3 |
| Static Electrical Characteristics | |||||
| Gate threshold voltage | VGS(th) | V | 2.0 / 2.5 / 4.0 | VDS=VGS, ID= 11.5mA | Fig.4, 11 |
| Gate threshold voltage | VGS(th) | V | 2.0 | VDS=VGS, ID= 11.5mA, Tj=175 | |
| Drain source breakdown voltage | V(BR)DSS | V | 1200 | VGS=0, ID=100uA | |
| Zero gate voltage drain current | IDSS | uA | 1 / 50 | VDS=1200V, VGS= 0V | Fig.16 |
| Gate source leakage current | IGSS | nA | 10 / 100 | VGS= 15V, VDS=0V | |
| Current drain source on-state resistance | RDS ON | m | 33 / 44 | VGS=15V, ID=40A | Fig.5, 6, 7 |
| Current drain source on-state resistance | RDS ON | m | 63 | VGS=15V, ID=40A,Tj=175 | |
| Internal gate resistance | Rg | 3.0 / 5.0 | f=1MHz | ||
| Diode forward voltage | VSD | V | 5.0 | VGS=-4V, ISD=20A | Fig.8 |
| Diode forward voltage | VSD | V | 3.3 | VGS=0V, ISD=20A Tj=175 | Fig.9 |
| Transconductance | gf | S | 26 / 22 | VDS=20V,ID=40A | Fig.4 |
| Dynamic Electrical Characteristics | |||||
| Input capacitance | Ciss | pF | 3456 | VDS=1000V, VGS=0V, Tj=25, f=100 kHz, VAC = 25mV | Fig.13, 14 |
| Output capacitance | Coss | pF | 127 | VDS=1000V, VGS=0V, Tj=25, f=100 kHz, VAC = 25mV | Fig.13, 14 |
| Reverse capacitance | Crss | pF | 7.2 | VDS=1000V, VGS=0V, Tj=25, f=100 kHz, VAC = 25mV | Fig.13, 14 |
| Coss stored energy | Eoss | uJ | 69 | VDS=1000V, VGS=0V, Tj=25, f=100 kHz, VAC = 25mV | Fig.15 |
| Gate source charge | Qgs | nC | 39 | VDS=800V, VGS=-4/15V, ID=40A | Fig.12 |
| Gate drain charge | Qg d | nC | 44 | VDS=800V, VGS=-4/15V, ID=40A | Fig.12 |
| Gate charge | Qg | nC | 116 | VDS=800V, VGS=-4/15V, ID=40A | Fig.12 |
| Switching Characteristics | |||||
| Turn on switching energy | Eon | uJ | 80 | VDD=800V, VGS=-4/+15V, ID=40A, Rg=2.5, L=65uH | Fig.21, 22 |
| Turn off switching energy | Eoff | uJ | 500 | VDD=800V, VGS=-4/+15V, ID=40A, Rg=2.5, L=65uH | Fig.21, 22 |
| Turn on delay time | td(on) | ns | 23 | VDD=800V, VGS=-4/+15V, ID=40A, Rg=2.5, L=65uH | Fig.21, 22 |
| Rise time | tr | ns | 20 | VDD=800V, VGS=-4/+15V, ID=40A, Rg=2.5, L=65uH | Fig.21, 22 |
| Turn off delay time | td(off) | ns | 31 | VDD=800V, VGS=-4/+15V, ID=40A, Rg=2.5, L=65uH | Fig.21, 22 |
| Fall time | tf | ns | 8 | VDD=800V, VGS=-4/+15V, ID=40A, Rg=2.5, L=65uH | Fig.21, 22 |
| Body diode characteristics | |||||
| Diode forward voltage | VSD | V | 5.0 | VGS=-4V,ISD=20A | Fig.8 |
| Diode forward voltage | VSD | V | 3.3 | VGS=0V, ISD=20A, Tj=175 | Fig.9 |
| Continuous diode forward current | IS | A | 66 | Tc=25 | Note1 |
| Reverse recovery time | trr | nS | 27 | VR=800V, VGS=-4V, ID=40A, di/dt=2250A/uS | |
| Reverse recovery charge | Qrr | nC | 478 | VR=800V, VGS=-4V, ID=40A, di/dt=2250A/uS | |
| Peak reverse recovery current | Irrm | A | 27 | VR=800V, VGS=-4V, ID=40A, di/dt=2250A/uS | |
| Thermal Characteristics | |||||
| Thermal resistance | RJ-C | C /W | 0.45 | Typ. | |
2411081727_YANGJIE-YJD212040NCFG2_C20605668.pdf
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