PNP epitaxial silicon transistor UTC 2SA733G-P-AE3-R suitable for low frequency amplifier applications
Key Attributes
Model Number:
2SA733G-P-AE3-R
Product Custom Attributes
Current - Collector Cutoff:
100nA
Emitter-Base Voltage(Vebo):
5V
DC Current Gain:
600@1mA,6V
Transition Frequency(fT):
190MHz
Vce Saturation(VCE(sat)):
300mV@100mA,10mA
Type:
PNP
Pd - Power Dissipation:
300mW
Current - Collector(Ic):
150mA
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
2SA733G-P-AE3-R
Package:
SOT-23
Product Description
Product Overview
The UTC 2SA733 is a PNP epitaxial silicon transistor designed for low-frequency amplifier applications. It offers high hFE linearity and is the complementary counterpart to the 2SC945 transistor. This device is suitable for general-purpose amplification.
Product Attributes
- Brand: UNISONIC TECHNOLOGIES CO., LTD
- Material: Silicon
- Type: PNP Epitaxial Silicon Transistor
- Certifications: Lead Free, Halogen Free
Technical Specifications
| Ordering Number | Package | Pin Assignment | Collector-Emitter Voltage (VCEO) | Collector Current (IC) | Collector Power Dissipation (PC) | DC Current Gain (hFE) |
| 2SA733L-x-AE3-R | SOT-23 | B E C | -50 V | -150 mA | 300 mW | 90 - 600 |
| 2SA733G-x-AE3-R | SOT-23 | B E C | -50 V | -150 mA | 300 mW | 90 - 600 |
| 2SA733L-x-AL3-R | SOT-323 | B E C | -50 V | -150 mA | 200 mW | 90 - 600 |
| 2SA733G-x-AL3-R | SOT-323 | B E C | -50 V | -150 mA | 200 mW | 90 - 600 |
| 2SA733L-x-T92-B | TO-92 | E C B | -50 V | -150 mA | 750 mW | 90 - 600 |
| 2SA733G-x-T92-B | TO-92 | E C B | -50 V | -150 mA | 750 mW | 90 - 600 |
| 2SA733L-x-T92-K | TO-92 | E C B | -50 V | -150 mA | 750 mW | 90 - 600 |
| 2SA733G-x-T92-K | TO-92 | E C B | -50 V | -150 mA | 750 mW | 90 - 600 |
| 2SA733L-x-T9S-B | TO-92SP | E C B | -50 V | -150 mA | 550 mW | 90 - 600 |
| 2SA733G-x-T9S-B | TO-92SP | E C B | -50 V | -150 mA | 550 mW | 90 - 600 |
| 2SA733L-x-T9S-K | TO-92SP | E C B | -50 V | -150 mA | 550 mW | 90 - 600 |
| 2SA733G-x-T9S-K | TO-92SP | E C B | -50 V | -150 mA | 550 mW | 90 - 600 |
| Parameter | Symbol | Test Conditions | Rating | Unit |
| Collector-Base Voltage | VCBO | -60 | V | |
| Collector-Emitter Voltage | VCEO | -50 | V | |
| Emitter-Base Voltage | VEBO | -5 | V | |
| Collector Current | IC | -150 | mA | |
| Junction Temperature | TJ | +125 | C | |
| Storage Temperature | TSTG | -55 ~ +150 | C | |
| Collector Cut-Off Current | ICBO | VCB=-40V, IE=0 | -100 | nA |
| Emitter Cut-Off Current | IEBO | VEB=-3V, IC=0 | -100 | nA |
| Collector-Emitter Saturation Voltage | VCE(SAT) | IC=-100mA, IB=-10mA | -0.1 ~ -0.3 | V |
| Current Gain Bandwidth Product | fT | VCE=-10V, IC=-50mA | 100 ~ 190 | MHz |
| Output Capacitance | Cob | VCB=-10V, IE=0, f=1MHz | 2.0 ~ 3.0 | pF |
| Noise Figure | NF | IC=-0.1mA, VCE=-6V RG=10k, f=100Hz | 4.0 ~ 6.0 | dB |
2212091108_UTC-2SA733G-P-AE3-R_C5310363.pdf
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