Bipolar Transistor Arrays
TOSHIBA TD62783AFG O S EL 8 channel high voltage source driver compatible with TTL and 5V CMOS logic types
Product OverviewThe TD62783APG/AFG Series are 8-channel high-voltage source drivers comprised of eight source current transistor arrays. These drivers are specifically designed for fluorescent display applications and are also suitable for relay, hammer, and lamp drivers. Key features include high output voltage (up to 50 V), high output current (up to -500 mA per channel), output clamp diodes, and single supply voltage operation. They are input compatible with various logic
load driver 8 channel sink type DMOS transistor array TOSHIBA TBD62183AFNGZEL with built in clamp diode
Product OverviewThe TBD62183A series is an 8-channel sink type DMOS transistor array designed for switching inductive loads. Each output includes a built-in clamp diode for protection. This series offers high voltage and high current capabilities, making it suitable for various applications requiring efficient load driving.Product AttributesBrand: TOSHIBAOrigin: Silicon MonolithicTechnical SpecificationsPart NumberPackage TypeWeight (Typ.)Output Voltage (MAX)Output Current
Low Frequency Amplifier Transistor TOSHIBA 2SC4738-GR LF Silicon NPN Epitaxial Type with SSM Package
Product OverviewThe 2SC4738 is a silicon NPN epitaxial transistor designed for low-frequency amplifier applications, including AM amplifiers. It offers high voltage (VCEO = 50 V), high collector current (IC = 150 mA max), and excellent hFE linearity. This device is AEC-Q101 qualified and comes in a small SSM package.Product AttributesBrand: ToshibaType: Silicon NPN Epitaxial TypeCertifications: AEC-Q101 qualifiedComplementary to: 2SA1832Package: SSMTechnical SpecificationsOrd
Seven channel darlington transistor array waferbest WB2003F for driving solenoids relays and dc motors
Product OverviewThe WB2003 is a high-voltage, high-current Darlington transistor array featuring seven open collector common emitter pairs, each rated at 500mA. It is designed to drive a wide range of loads including solenoids, relays, DC motors, LED displays, filament lamps, thermal print heads, and high-power buffers. The device includes suppression diodes for inductive load driving and offers inputs compatible with various logic types. Its outputs are pinned in opposition
Power Switching Silicon PNP Transistor TOSHIBA TTA008B Q with High DC Current Gain and Fast Response
Product OverviewThe TTA008B is a silicon PNP epitaxial bipolar transistor designed for power amplifier and power switching applications. It features high DC current gain, low collector-emitter saturation voltage, and high-speed switching capabilities. It is complementary to the TTC015B.Product AttributesBrand: TOSHIBAMaterial: Silicon PNP EpitaxialPackaging: TO-126NCertifications: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]Technical SpecificationsCharacteristicsSymbolRatingUni
TOSHIBA 2SC2873-Y TE12L CF power amplifier transistor silicon NPN epitaxial type with fast switching
Product OverviewThe TOSHIBA 2SC2873 is a silicon NPN epitaxial transistor designed for power amplifier and power switching applications. It features a low saturation voltage of 0.5 V (max) at 1 A, high-speed switching time of 1.0 s (typ.), and is housed in a small flat package. This transistor is complementary to the 2SA1213.Product AttributesBrand: TOSHIBAType: Silicon NPN Epitaxial Transistor (PCT Process)Complementary to: 2SA1213Package: Small flat package (2-5K1A)Weight:
High current 8 channel Darlington sink driver TOSHIBA ULN2803AFWG for relay hammer lamp and LED drivers
Product OverviewThe ULN2803APG / AFWG Series are high-voltage, high-current 8-channel Darlington sink drivers. Each unit features integrated clamp diodes for switching inductive loads, making them suitable for applications such as relay, hammer, lamp, and LED drivers. The '(G)' suffix indicates a Lead (Pb)-Free product.Product AttributesBrand: TOSHIBAOrigin: Manufactured by Toshiba MalaysiaMaterial: Silicon Monolithic Bipolar Digital Integrated CircuitCertifications: Lead (Pb
High Speed Switching Silicon Transistor UTC 2SC5569G-AB3-R Suitable for Relay Motor and Lamp Drivers
UNISONIC TECHNOLOGIES CO., LTD 2SC5569 NPN SILICON TRANSISTORThe 2SC5569 is an NPN silicon transistor designed for DC/DC converter applications. It features high current capacitance, low collector-to-emitter saturation voltage, high-speed switching, and high allowable power dissipation. It is complementary to the 2SA2016 and suitable for relay drivers, lamp drivers, motor drivers, and strobes.Product AttributesBrand: UNISONIC TECHNOLOGIES CO., LTDMaterial: SiliconCertificatio
TOSHIBA RN1903 LF CT Silicon NPN Epitaxial Transistor for Interface Circuit Applications US6 Package
TOSHIBA RN1901~RN1906 Silicon NPN Epitaxial TransistorThe TOSHIBA RN1901 to RN1906 series are silicon NPN epitaxial type transistors featuring built-in bias resistors. These transistors are designed for switching, inverter circuit, interface circuit, and driver circuit applications. They are available in US6 (ultra super mini type with 6 leads) packages, offering simplified circuit design, reduced part quantities, and streamlined manufacturing processes. These devices are
Silicon PNP transistor UTC 2SA733L-P-T92-B designed for low frequency amplification and complementary
Product OverviewThe UTC 2SA733 is a PNP epitaxial silicon transistor designed for low-frequency amplification. It offers high hFE linearity and is a complementary part to the 2SC945. This transistor is suitable for various amplification applications.Product AttributesBrand: UNISONIC TECHNOLOGIES CO., LTDMaterial: SiliconType: PNP Epitaxial TransistorCertifications: Lead Free, Halogen FreeTechnical SpecificationsParameterSymbolRatingUnitConditionsCollector-Base VoltageVCBO
Medium Speed Switching and Audio Frequency Amplification Using UTC MMBT1616AG-G-AE3-R NPN Transistor
Product OverviewThe MMBT1616/A is an NPN epitaxial silicon transistor designed for audio frequency power amplification and medium-speed switching applications. Packaged in a SOT-23 (JEDEC TO-236) case, it offers reliable performance for various electronic circuits.Product AttributesBrand: UNISONIC TECHNOLOGIES CO., LTDMaterial: Epitaxial SiliconCertifications: Lead Free, Halogen Free (for specific order numbers)Technical SpecificationsParameterSymbolMMBT1616MMBT1616AUnitTest
High speed switching transistor UTC 2SD1816L-R-TN3-R in small TO 252 package for electronic circuits
Product OverviewThe UNISONIC TECHNOLOGIES CO., LTD 2SD1816 is an NPN planar transistor designed for high current switching applications. It features a low collector-to-emitter saturation voltage, good linearity of hFE, a small and slim package for compact designs, high fT, and fast switching speeds.Product AttributesBrand: UNISONIC TECHNOLOGIES CO., LTDProduct Type: NPN PLANAR TRANSISTORCertifications: Lead Free, Halogen FreeTechnical SpecificationsOrdering NumberPackagePin
High voltage NPN transistor UTC 2SC1623G-L6-AE3-R suitable for audio frequency amplifier applications
Product OverviewThe UTC 2SC1623 is a NPN silicon transistor utilizing UTC's advanced technology. It offers high DC current gain and high breakdown voltage, making it suitable for general-purpose amplifier applications in audio frequency circuits.Product AttributesBrand: UNISONIC TECHNOLOGIES CO., LTDMaterial: NPN SILICON TRANSISTORCertifications: Lead Free, Halogen FreeTechnical SpecificationsParameterSymbolTest ConditionsMinTypMaxUnitCollector to Base VoltageVCBO60VCollector
High Current Gain NPN Darlington Transistor UTC BTC1510F3L-TN3-R Suitable for Amplifier Applications
Product OverviewThe UTC BTC1510F3 is a NPN Epitaxial Planar Transistor designed as a NPN Darlington transistor for general purpose amplifier and low speed switching applications. It offers very high BVCEO, very low VCE(SAT), and very high current gain.Product AttributesBrand: UNISONIC TECHNOLOGIES CO., LTDOrigin: Taiwan (implied by website domain)Certifications: Lead Free, Halogen FreeTechnical SpecificationsOrdering NumberPackagePin AssignmentLead FreeHalogen FreeBTC1510F3L
Low VCE SAT NPN silicon transistor UTC 2SD1664G-R-AB3-R epitaxial planar type for electronic circuit
Product OverviewThe UTC 2SD1664 is an epitaxial planar type NPN silicon transistor designed for medium power applications. It features a low VCE(SAT) of 0.15V (Typ.) at IC/IB= 500mA/50mA and complements the 2SB1132. This transistor is suitable for various electronic circuits requiring reliable NPN amplification and switching capabilities.Product AttributesBrand: UNISONIC TECHNOLOGIES CO., LTDMaterial: NPN Silicon TransistorCertifications: Lead Free, Halogen FreeTechnical
TOSHIBA TTA006B Q PNP Bipolar Transistor Featuring Low Output Capacitance for Amplifier Applications
Product OverviewThe TTA006B is a silicon PNP epitaxial bipolar transistor designed for power amplifier and audio-frequency amplifier applications. It features a high collector voltage of -230 V (min), small collector output capacitance (30 pF typ.), and a high transition frequency (70 MHz typ.). It is complementary to the TTC011B.Product AttributesBrand: ToshibaMaterial: SiliconType: PNP Epitaxial Bipolar TransistorCertifications: RoHS CompatibleTechnical SpecificationsCharac
Silicon Transistor TOSHIBA 2SC4213-B TE85L F with Low Cut Off Current and High Gain Characteristics
Product OverviewThe TOSHIBA 2SC4213 is a silicon NPN epitaxial transistor designed for muting and switching applications. It features high emitter-base voltage (VEBO = 25 V min), high reverse hFE (150 typ.), low on resistance (1 typ.), and high DC current gain (200 to 1200). Its small package makes it suitable for various electronic designs.Product AttributesBrand: TOSHIBAOrigin: Japan (implied by TOSHIBA)Material: SiliconPackage: SC-70 (JEITA/JEITA)Weight: 0.006 g (typ.
Power DIP packaged ST L6221AS quad Darlington switch with 50 volts output voltage and low turn on delay time
L6221 Quad Darlington SwitchThe L6221 is a monolithic quad Darlington switch designed for high current, high voltage switching applications. It features four non-inverting inputs with a common enable control, offering TTL-compatible inputs and very low saturation voltage. Each switch includes an open-collector Darlington transistor and a fast recirculation diode, making it suitable for applications with inductive loads. The emitters are commoned, and any number of inputs and
Silicon Transistor UTC 2SC4617G-R-AE3-R with SOT 23 Package and 200 Milliwatt Collector Power Dissipation
Product OverviewThe UNISONIC TECHNOLOGIES CO., LTD 2SC4617 is an NPN Silicon Transistor designed for general-purpose applications. It features low output capacitance (Cob=2.0pF typ) and complements the UTC 2SA1774. This transistor is suitable for various electronic circuits requiring a reliable general-purpose switching or amplification component.Product AttributesBrand: UNISONIC TECHNOLOGIES CO., LTDMaterial: SiliconCertifications: Halogen FreeTechnical SpecificationsOrderin
Electronic Silicon Transistor UTC 2SB1116AG-G-T92-B PNP Type with Total Power Dissipation 750 Milliwatts
Product OverviewThe UNISONIC TECHNOLOGIES CO., LTD 2SB1116/A is a PNP epitaxial silicon transistor designed as a complement to the UTC 2SD1616/A. It is suitable for various electronic applications requiring a PNP transistor with specific voltage, current, and gain characteristics.Product AttributesBrand: UNISONIC TECHNOLOGIES CO., LTDMaterial: SiliconCertifications: Lead Free, Halogen FreeTechnical SpecificationsParameterSymbol2SB11162SB1116AUnitConditionsNotesCollector to