Silicon Transistor UTC 2SC4617G-R-AE3-R with SOT 23 Package and 200 Milliwatt Collector Power Dissipation

Key Attributes
Model Number: 2SC4617G-R-AE3-R
Product Custom Attributes
Emitter-Base Voltage(Vebo):
7V
Current - Collector Cutoff:
100nA
DC Current Gain:
180@1mA,6V
Transition Frequency(fT):
180MHz
Vce Saturation(VCE(sat)):
400mV
Type:
NPN
Pd - Power Dissipation:
200mW
Current - Collector(Ic):
150mA
Collector - Emitter Voltage VCEO:
50V
Operating Temperature:
-
Mfr. Part #:
2SC4617G-R-AE3-R
Package:
SOT-23
Product Description

Product Overview

The UNISONIC TECHNOLOGIES CO., LTD 2SC4617 is an NPN Silicon Transistor designed for general-purpose applications. It features low output capacitance (Cob=2.0pF typ) and complements the UTC 2SA1774. This transistor is suitable for various electronic circuits requiring a reliable general-purpose switching or amplification component.

Product Attributes

  • Brand: UNISONIC TECHNOLOGIES CO., LTD
  • Material: Silicon
  • Certifications: Halogen Free

Technical Specifications

Ordering NumberPackagePin AssignmentCollector-Emitter Voltage (VCEO)Collector Current (IC)Collector Power Dissipation (PC)Transition Frequency (fT)Output Capacitance (Cob)
2SC4617G-x-AB3-RSOT-89B C E50 V0.15 A500 mW180 MHz2 ~ 3.5 pF
2SC4617G-x-AE3-RSOT-23E B C50 V0.15 A200 mW180 MHz2 ~ 3.5 pF
2SC4617G-x-AL3-RSOT-323E B C50 V0.15 A200 mW180 MHz2 ~ 3.5 pF
2SC4617G-x-AN3-RSOT-523E B C50 V0.15 A150 mW180 MHz2 ~ 3.5 pF
2SC4617G-x-AQ3-RSOT-723E B C50 V0.15 A125 mW180 MHz2 ~ 3.5 pF

1810251912_UTC-2SC4617G-R-AE3-R_C99963.pdf

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