High voltage NPN transistor UTC 2SC1623G-L6-AE3-R suitable for audio frequency amplifier applications
Key Attributes
Model Number:
2SC1623G-L6-AE3-R
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
DC Current Gain:
600@1.0mA,6.0V
Transition Frequency(fT):
250MHz
Type:
NPN
Vce Saturation(VCE(sat)):
300mV@100mA,10mA
Pd - Power Dissipation:
200mW
Current - Collector(Ic):
100mA
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
2SC1623G-L6-AE3-R
Package:
SOT-23
Product Description
Product Overview
The UTC 2SC1623 is a NPN silicon transistor utilizing UTC's advanced technology. It offers high DC current gain and high breakdown voltage, making it suitable for general-purpose amplifier applications in audio frequency circuits.
Product Attributes
- Brand: UNISONIC TECHNOLOGIES CO., LTD
- Material: NPN SILICON TRANSISTOR
- Certifications: Lead Free, Halogen Free
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| Collector to Base Voltage | VCBO | 60 | V | |||
| Collector to Emitter Voltage | VCEO | 50 | V | |||
| Emitter to Base Voltage | VEBO | 5.0 | V | |||
| Collector Current (DC) | IC | 100 | mA | |||
| Power Dissipation | PD | 200 | mW | |||
| Junction Temperature | TJ | +150 | C | |||
| Storage Temperature | TSTG | -55 | +150 | C | ||
| Collector Cutoff Current | ICBO | VCB=60V, IE=0 | 0.1 | A | ||
| Emitter Cutoff Current | IEBO | VEB=5.0V, IC=0 | 0.1 | A | ||
| DC Current Gain | hFE | VCE=6.0V, IC=1.0mA (Note 1) | 90 | 600 | ||
| Collector Saturation Voltage | VCE(SAT) | IC=100mA, IB=10mA (Note 1) | 0.3 | V | ||
| Base to Saturation Voltage | VBE(SAT) | IC=100mA, IB= 10mA (Note 1) | 1.0 | V | ||
| Base Emitter Voltage | VBE | VCE=6.0V, IC=1.0mA (Note 1) | 0.55 | 0.7 | V | |
| Gain Bandwidth Product | fT | VCE= 6.0V, IE=-10mA | 250 | MHz | ||
| Output Capacitance | COB | VCB= 6.0V, IE=0, f=1.0MHz | 3.0 | pF |
2212091108_UTC-2SC1623G-L6-AE3-R_C5310364.pdf
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