Electronic Silicon Transistor UTC 2SB1116AG-G-T92-B PNP Type with Total Power Dissipation 750 Milliwatts
Key Attributes
Model Number:
2SB1116AG-G-T92-B
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
100nA
DC Current Gain:
200@100mA,2V
Transition Frequency(fT):
120MHz
Vce Saturation(VCE(sat)):
200mV
Type:
PNP
Pd - Power Dissipation:
750mW
Current - Collector(Ic):
1A
Collector - Emitter Voltage VCEO:
60V
Operating Temperature:
-20℃~+85℃
Mfr. Part #:
2SB1116AG-G-T92-B
Package:
TO-92
Product Description
Product Overview
The UNISONIC TECHNOLOGIES CO., LTD 2SB1116/A is a PNP epitaxial silicon transistor designed as a complement to the UTC 2SD1616/A. It is suitable for various electronic applications requiring a PNP transistor with specific voltage, current, and gain characteristics.
Product Attributes
- Brand: UNISONIC TECHNOLOGIES CO., LTD
- Material: Silicon
- Certifications: Lead Free, Halogen Free
Technical Specifications
| Parameter | Symbol | 2SB1116 | 2SB1116A | Unit | Conditions | Notes |
| Collector to Base Voltage | VCBO | -60 | -80 | V | ||
| Collector to Emitter Voltage | VCEO | -50 | -60 | V | ||
| Emitter to Base Voltage | VEBO | -6 | -6 | V | ||
| Collector Current | IC | -1 | -1 | A | ||
| Pulse Collector Current | ICM | -2 | -2 | A | Pulse width10ms, Duty cycle50% | 2 |
| Total Power Dissipation (SOT-89) | PC | 500 | 500 | mW | TA=25C | |
| Total Power Dissipation (TO-92) | PC | 750 | 750 | mW | TA=25C | |
| Junction Temperature | TJ | +150 | +150 | C | ||
| Operating Temperature | TOPR | -20 ~ +85 | -20 ~ +85 | C | ||
| Storage Temperature | TSTG | -55 ~ +150 | -55 ~ +150 | C | ||
| Collector-Emitter Saturation Voltage | VCE(SAT) | -0.2 | -0.3 | V | IC=-1A, IB=-50mA | Note |
| Base-Emitter Saturation Voltage | VBE(SAT) | -0.9 | -1.2 | V | IC=-1A, IB=-50mA | Note |
| Base Emitter On Voltage | VBE(ON) | -600 | -650 | mV | VCE=-2V, IC=-50mA | Note |
| Collector Cut-Off Current | ICBO | -100 | -100 | nA | VCB=-60V, IE=0 | |
| Emitter Cut-Off Current | IEBO | -100 | -100 | nA | VEB=-6V, IC=0 | |
| DC Current Gain (hFE1) | hFE1 | 135 ~ 600 | 135 ~ 400 | VCE=-2V, IC=-100mA | ||
| DC Current Gain (hFE2) | hFE2 | 81 | 81 | VCE=-2V, IC=-1A | ||
| Transition Frequency | fT | 70 ~ 120 | 70 ~ 120 | MHz | VCE=-2V, IC=-100mA | |
| Output Capacitance | COB | 25 | 25 | pF | VCB=-10V, IE=0, f=1MHz | |
| Turn On Time | tON | 0.07 | 0.07 | s | VCC=-10V, IC=-100mA, IB1=-IB2=-10mA, VBE(OFF)=2 ~ 3V | Note |
| Storage Time | tSTG | 0.7 | 0.7 | s | VCC=-10V, IC=-100mA, IB1=-IB2=-10mA, VBE(OFF)=2 ~ 3V | Note |
| Fall Time | tF | 0.07 | 0.07 | s | VCC=-10V, IC=-100mA, IB1=-IB2=-10mA, VBE(OFF)=2 ~ 3V | Note |
1809052137_UTC-2SB1116AG-G-T92-B_C87889.pdf
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