Trench Power LV MOSFET Slkor SL3406 N Channel Device Suitable for Load Switching and Power Management
Key Attributes
Model Number:
SL3406
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
5.6A
Operating Temperature -:
-55℃~+150℃
RDS(on):
40mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
2.2V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
68pF@15V
Number:
1 N-channel
Input Capacitance(Ciss):
490pF@15V
Pd - Power Dissipation:
1.2W
Gate Charge(Qg):
5.2nC
Mfr. Part #:
SL3406
Package:
SOT-23-3
Product Description
Product Overview
The SL3406 is an N-Channel Power MOSFET utilizing Trench Power LV MOSFET technology. It features a high-density cell design for low RDS(ON) and high-speed switching capabilities. This MOSFET is suitable for applications such as battery protection, load switching, and power management.
Product Attributes
- Brand: SLKOR
- Model: SL3406
- Technology: Trench Power LV MOSFET
Technical Specifications
| Parameter | Symbol | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| Drain-source Voltage | VDS | 30 | V | |||
| Gate-source Voltage | VGS | 20 | V | |||
| Drain Current (TA=25 @ Steady State) | ID | 5.6 | A | |||
| Drain Current (TA=70 @ Steady State) | ID | 4.5 | A | |||
| Pulsed Drain Current | IDM | 30 | A | |||
| Total Power Dissipation (@ TA=25) | PD | 1.2 | W | |||
| Thermal Resistance Junction-to-Ambient (@ Steady State) | RJA | 104 | / W | |||
| Junction and Storage Temperature Range | TJ ,TSTG | -55 | +150 | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS= 0V, ID=250A | 30 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=30V,VGS=0V | 1 | A | ||
| Gate-Body Leakage Current | IGSS | VGS= 20V, VDS=0V | 100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VDS= VGS, ID=250A | 1 | 1.5 | 2.2 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V, ID=5.6A | 21 | 29 | m | |
| Static Drain-Source On-Resistance | RDS(ON) | VGS= 4.5V, ID=5.0A | 27 | 40 | m | |
| Diode Forward Voltage | VSD | IS=5.6A,VGS=0V | 0.8 | 1.2 | V | |
| Maximum Body-Diode Continuous Current | IS | 5.6 | A | |||
| Dynamic Parameters | ||||||
| Input Capacitance | Ciss | VDS=15V,VGS=0V,f=1MHZ | 490 | pF | ||
| Output Capacitance | Coss | VDS=15V,VGS=0V,f=1MHZ | 92 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS=15V,VGS=0V,f=1MHZ | 68 | pF | ||
| Switching Parameters | ||||||
| Total Gate Charge | Qg | VGS=10V,VDS=15V,ID=5.6A | 5.2 | nC | ||
| Gate Source Charge | Qgs | VGS=10V,VDS=15V,ID=5.6A | 0.9 | nC | ||
| Gate Drain Charge | Qg | VGS=10V,VDS=15V,ID=5.6A | 1.3 | nC | ||
| Turn-on Delay Time | tD(on) | VGS=4.5V,VDD=15V, ID=1A, RGEN=2.8 | 4.5 | ns | ||
| Turn-on Rise Time | tr | VGS=4.5V,VDD=15V, ID=1A, RGEN=2.8 | 2.5 | ns | ||
| Turn-off Delay Time | tD(off) | VGS=4.5V,VDD=15V, ID=1A, RGEN=2.8 | 14.5 | ns | ||
| Turn-off Fall Time | tf | VGS=4.5V,VDD=15V, ID=1A, RGEN=2.8 | 3.5 | ns | ||
2106062139_Slkor-SL3406_C2760866.pdf
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