Low RDSon P Channel MOSFET Slkor SL3139K Surface Mount Device Suitable for Portable Electronics

Key Attributes
Model Number: SL3139K
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
660mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
700mΩ@2.5V
Gate Threshold Voltage (Vgs(th)):
1.1V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
15pF
Number:
1 P-Channel
Output Capacitance(Coss):
25pF
Input Capacitance(Ciss):
170pF
Pd - Power Dissipation:
150mW
Mfr. Part #:
SL3139K
Package:
SOT-723-3
Product Description

Product Overview

The SL3139K is a P-Channel MOSFET designed for surface mount applications. It features low RDS(on) for efficient switching and is operated at low logic level gate drive. This lead-free product is suitable for load/power switching, interfacing, logic switching, and battery management in ultra-small portable electronics.

Product Attributes

  • Brand: SLKORMicro
  • Product Type: P-Channel MOSFET
  • Package: Surface Mount
  • Feature: Lead Free
  • Advantage: Low RDS(on), Low Logic Level Gate Drive

Technical Specifications

SymbolParameterConditionMinTypMaxUnit
V(BR)DSSDrain-source breakdown voltageVGS = 0V, ID =-250A-20V
IDSSZero gate voltage drain currentVDS =-20V,VGS = 0V-1A
IGSSGate-body leakage currentVGS =10V, VDS = 0V20A
VGS(th)Gate threshold voltageVDS =VGS, ID =-250A-0.35-0.45V
RDS(on)Drain-source on-resistanceVGS =-4.5V, ID =-1A430520m
VGS =-2.5V, ID =-0.8A624700m
VGS =-1.8V, ID =-0.5A950m
gFSForward transconductanceVDS =-10V, ID =-0.54A1.2S
VSDDiode forward voltageIS=-0.5A, VGS = 0V-1.2V
CissInput capacitance113170pF
CossOutput capacitance1525pF
CrssReverse transfer capacitanceVDS =-16V,VGS =0V,f =1MHz915pF
Switching CharacteristicsTurn-on delay timeVGS=-4.5V,VDS=-10V, ID =-200mA,RGEN=109ns
Turn-on rise time5.8ns
Turn-off delay time32.7ns
Turn-off fall time20.3ns

2201121900_Slkor-SL3139K_C2943026.pdf

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